• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.201-204
• /
• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.130-132
• /
• 2001

We have investigated current-voltage(I-V) characteristics of organic light-emitting diodes based on TPD/Alq$_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from Alq$_3$.

• 한국전기전자재료학회논문지
• /
• 제13권11호
• /
• pp.908-913
• /
• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권2호
• /
• pp.79-99
• /
• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• 대한전자공학회논문지SD
• /
• 제39권3호
• /
• pp.9-19
• /
• 2002

본 논문에서는 thermionic emission 모델을 이용하여 SCH 양자우물 레이저 다이오드에 대한 L-I-V특성을 해석적으로 도출하였다. SCH의 bulk 캐리어와 양자우물 속박 캐리어의 관계를 도출하였고, 주입된 전류를 각 영역에서의 캐리어 재결합을 고려한 전류 연속 방정식을 만족하도록 하였다. 또한, high level injection과 전하 중성 조건하에 ambipolar 확산 방정식을 이용하여 캐리어 분포를 고찰하였다. 위 해석적인 모델을 이용하여 계산한 결과, 클래딩 영역의 전위장벽 변화가 전류 전압 특성 변화의 주요 원인으로 나타났다. 또한 thermionic emission에 의한 주입 전류의 forward flux 증가가 캐리어 주입을 증가시키고, 레이저 다이오드의 직렬 저항을 감소시키는 것을 보였다.

• Transactions on Electrical and Electronic Materials
• /
• 제3권2호
• /
• pp.10-15
• /
• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2007년도 춘계학술대회 논문집
• /
• pp.291-294
• /
• 2007

This paper preserts the characteristics of leakage currents flowing through 18 kV zinc oxide (ZnO) surge arrester under the mixed DC and AC voltages. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in I-V curves was observed at the low current region As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current th ZnO surge arrester.

• 한국의학물리학회지:의학물리
• /
• 제13권1호
• /
• pp.44-50
• /
• 2002

실험실에서 성장시킨 CsI(T1)섬광체를 이용하여 검출기를 설계 제작하고 분광 및 출력특성을 조사하여 핵분광과 진단방사선센서로서의 응용가능성을 타진해 보았다. CsI(T1)단결정은 수직 Bridgman성장장치를 이용하여 지름 11mm, 몰농도 0.001mo1%로 성장시키었다. 이 단결정을 광다이오드를 이용하여 방사선 센서로 제작한 후, $^{22}$ Na, /up 137/Cs, $^{30}$ Co 표준감마선원에 대한 에너지 분해능을 각각 측정하였으며 진단 X선 영역에 대한 출력특성도 측정하였다. $^{22}$ Na의 0.511 MeV 의 경우13.2%, $^{137}$Cs의 0.662 MeV의 경우 8.3%, 그리고 $^{60}$Co의 1.17 MeV와 1.332 MeV에 대해서는 각각 6.7%와 5.1%의 에너지 분해능을 얻었다. 또한 관전압 60kVp, 80kVp, 100kVp, 120kVp 에 대하여 5mAs부터 80mAs 까지 진단 X선영역에 대한 출력 선형성을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제19권10호
• /
• pp.953-959
• /
• 2006

Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권3호
• /
• pp.210-224
• /
• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.