• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1648-1653
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• 2006

In this paper, transport characteristics have been investigated using analytical current-voltage model for double gate MOSFET(DGMOSFET). Scaling down to 100nm of gate length for MOSFET can bring about various problems such as a threshold voltage roll-off and increasing off current by tunneling since thickness of oxide is down by 1.fnm and doping concentration is increased. A current-voltage characteristics have been calculated according to changing of channel length,using analytical current-voltage relation. The analytical model has been verified by calculating I-V relation according to changing of oxide thickness and channel thickness as well as channel length. A current-voltage characteristics also have been compared and analyzed for operating temperature. When gate voltage is 2V, it is shown that a current-voltage characteristic in 77K is superior to in room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1214-1218
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• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.15-19
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• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.560-568
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• 2005

The proposed Multi-level PDP sustain Driver is composed of the semiconductor devices with low voltage rating compared to those used in the prior circuit proposed by L. Wether, and it has two resonant periods during the charging (rising period) and discharging (falling period) the PDP in the sustaining voltage waveforms. In accordance with the change of timing phase$(T_{r1},\;T_{i1},\;T_{r2})$, the performance characteristics of a commercial PDP module has been carried out and compared the characteristic with the 42V6, made of LG Electronics co., Experimental results show that the performance characteristics of PDP module are greatly influenced by the variation of $T_{i1}\;and\;T_{r2}$. The variation of $T_{r1}$ do not influence much on the performances of PDP. With the conditions that $T_{r1}=60ns,\;T_{i1}=120ns,\;and\;T_{r2}=350ns$, we could get the performances listed as the luminance is increased $14.6\%$, the power consumptions is decreased $5.9\%$, the panel efficiency is increased $24.2\%$, module efficiency is increased $21.2\%$, compared to those shown in the commercial PDP module (42V6). Therefore, the proposed multi-level PDP sustain driver expected to be suitable to actual PDP module application.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.222-222
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• 1999

From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

• Korean Journal of Veterinary Research
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• v.30 no.4
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• pp.383-394
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• 1990

The gastrointestinal endocrine cells of the Pond tortoise, Amyda sinensis were studied immunohistochemically, and somatostatin-, gastrin/cholecystokinin(GAS/CCK)-, glucagon-, 5-hydroxytryptamine(5-HT)-, insulin- and chromogranin-immunoreactive cells were revealed. The characteristic findings of the regional distribution and relative frequency of these immunoreative cells in the gastrointestinal tract of the Pond tortoise were as follows; A few somatostatin-immunoreactive cells were distributed from the segment I to the segment V. GAS/CCK-immunoreactive cells were found from the segment III to the segment VII. These cells were numerous in the segment III and a few in the other segments. A few glucagon-immunoreactive cells were found in the segment I and rare in the segment II. 5-HT-immunoreactive cells were found throughout the gastrointestinal tract. Numerous numbers of them were found in the segment I, while moderate or a few in the other segments. Insulin-immunoreactive cells were distributed from the segment II to the segment IX. Moderate numbers of them were found in the segment VIII and IX, while a few in the other segments. Chromogranin-immunoreactive cells were found from the segment III to the segment VI. Moderate numbers of these cells were found in the segment IV and V, while a few in the other segments. BPP-immunoreactive cells were not observed throughout the gastrointestinal tract of the Pond tortoise, Amyda sinensis.

• Journal of Sensor Science and Technology
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• v.27 no.4
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• pp.232-236
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• 2018

A radiation detection sensor was developed and characterized by combining three types of CsI(Tl) scintillators and an array-type SiPM to detect the radioactive contamination of discharged water in real time. The characterization results showed that type 3 exhibited the most desirable characteristics in response linearity (R-square: 0.97889) according to detection sensitivity and incident radiation dose. Furthermore, in terms of spectral characteristics, type 3 exhibited 16.54% at 0.356 MeV (the emission gamma ray energy of $^{133}Ba$), 10.28% at 0.511 MeV (the emission gamma ray energy of $^{22}Na$), 9.68% at 0.356 MeV (the emission gamma ray energy of $^{137}Cs$), and 2.55% and 4.80% at 1.173 MeV and 1.332 MeV (the emission gamma ray energies of $^{60}Co$), respectively. These measurements confirmed the good energy characteristics. The results were used to evaluate the spectral characteristics and energy linearity in a mixed source using type 3 with the best detection characteristics. It was confirmed that the gamma ray peaks of $^{133}Ba$, $^{22}Na$, $^{137}Cs$, and $^{60}Co$ were well resolved. Moreover, it was confirmed that R-square, which is an indicator of energy linearity, was 0.99986. This indicates a good linearity characteristic. Based on this study, further commercialization studies will contribute to measurements in real time and to the management of the contamination caused by radioactive wastewater or radioactive material leakage, which originate from facilities that use radioactive isotopes or care facilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.