• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.87-89
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• 2001

The structure of manufactured device is Cr-Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from -2[V] to +2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• IEIE Transactions on Smart Processing and Computing
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• 제5권1호
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.679-680
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• 2006

Various different types of joining between High Tc superconducting(HTS) tapes were prepared and current-voltage(I-V) characteristic curves were investigated at 77 K, liquid nitrogen temperature. Two typos of HTS tapes wore used, one is no laminated tape(Sumitomo high strength type tape) and the other stainless steel laminated tape(AMSC(American Superconductors Inc.) 3ply tapes) Sample joints were lap-jointed with indium or solder. Joint resistances between Sumitomo tapes with 4-10 mm in length were estimated from I-V curves and in the range of $4-8n{\Omega}$ at 77 K. Joint resistances of AMSC tapes were in the range of $140-170n{\Omega}$, much higher than them of Sumitomo samples. The n-values of jointed HTS tapes were 50% of them with no joint. In AMSC tapes, indium is better than solder as the jointing material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.546-549
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1966-1967
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• 2007

Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

• 센서학회지
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• 제6권3호
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• pp.194-199
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• 1997

자기센서가 전압이나 전류의 형태 그대로 출력되는 경우에 발생되는 잡음 유입 및 전압 손실 문제를 개선하기 위하여 소자부는 CMOS공정을 이용하여, 포화영역에서 동작하는 2 drain의 MAGFET을 설계 제작하고, 연산증폭기를 이용한 I-V변환회로, VCO(Voltage Controlled Oscillator)를 만들고 Schmitt trigger에 의한 주파수(Pulse) 변환회로의 시스템부를 하이브릿드 IC로 구성하여 packaging했다. 이 때 자기센서 절대감도는 1.9 V/T, 적감도는 $3.2{\times}10^{4}\;V/A{\cdot}T$ 이었으며 190 kHz/T의 안정된 출력 주파수 특성을 얻을 수 있었다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.105-109
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• 2002

A TVS and Varistor are preservative equipment against electro static discharge(ESD). We use a TVS for I/O protection of a circuit which has faster response time than a Varistor. And a Varistor has large power capability, therefore, which be used in input stage for internal pressure prevention. This paper will compare a TVS with a Varistor with respect to response characteristic to ESD in DC 24[V] low voltage circuit.

• 전기전자학회논문지
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• 제20권3호
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• pp.295-298
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• 2016

본 논문에서는 기존 ESD 보호소자인 SCR과 MVSCR, LVTSCR의 Turn-on-Time 및 전기적 특성을 시놉시스사의 T-Cad 시뮬레이션을 통하여 분석하였다. 분석결과 세 소자 모두 대략 2V 에서 3V 내외의 홀딩전압 특성을 보였으며, SCR은 약 20V의, MVSCR은 약 12V, LVTSCR은 9V로 순차적으로 개선된 트리거 특성을 보였다. 턴-온타임 시뮬레이션 결과는 SCR이 2.8ns, MVSCR과 LVTSCR은 각각 2.2ns, 2.0ns로 LVTSCR이 가장 짧은 턴-온 특성을 보였다. 반면 IT2 는 SCR이 약 7.7A, MVSCR은 5.5A LVTSCR은 4A의 특성을 보였으므로 I/O 및 파워 클램프 단에 적용 시 동작전압에 따른 최적화된 소자를 선택해야 한다.