• Journal of Welding and Joining
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• v.12 no.1
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• pp.94-101
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• 1994

In this study, plasma spraying has been used to produce $TiO_2$ polycrystalline coatings from $TiO_2$ powders. The physical and chemical properties of plasma sprayed $TiO_2$ coatings depend greatly on plasma spraying conditions. The electrical resistivity, oxygen concentration, photocurrent and crystal structure of plasma sprayed $TiO_2$ coating has been studied. The results are as follows: 1. The oxygen loss and electrical conductivity of $TiO_2$ plasma sprayed coatings increased by low pressure and high amount of auxiliary gas, hydrogen in plasma spraying. 2. Oxygen loss increase electrical conductivity, and decrease photocurrent of $TiO_2$ plasma sprayed coatings. 3. Photocurrent of $TiO_2$ plasma sprayed coatings manufactured in atmospheric pressure is higher than that of low pressure.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.496-502
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• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.109-114
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• 2021

We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.802-805
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• 2009

생활폐기물을 플라즈마 가스화하고 얻어지는 합성가스로부터 수소를 생산하는 파일럿플랜트 건설 계획을 소개한다. 이 파일럿플랜트는 현재 가동 중인 청송군의 10톤/일급 플라즈마 가스화 시설을 고농도 합성가스를 생산하는 시설로 변경하고 수소전환반응기와 수소 PSA 장치를 부착하여 99.999% 순도의 수소 $200Nm^3/h$을 생산하여 연료전지 발전하는 것으로 계획되어 있다. 이 파일럿플랜트는 $20Nm^3/h$ 급의 폐기물 플라즈마 가스화 - 고순도 수소 생산 기술개발 완료에 이은 상용화 실증 시설이다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.855-858
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• 2003

Carbon nanotubes (CNTs) were grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using mixture gas of $H_2/CH_4$ at low temperature of 500 $^{\circ}C$. Average diameter of CNTs could be easily controlled by $H_2$ plasma pretreatment time before CNTs growth. The turn-on voltages of CNT emitters were varied from 3.5 $V/{\mu}m$ to 9 $V/{\mu}m$ according to the hydrogen pretreatment conditions. The close relationship between electron emission characteristics and pretreatment time indicates that pretreatment condition can be a key process parameter in CNTs growth for field emission displays..

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Vacuum Magazine
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• v.2 no.4
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• pp.9-15
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• 2015

Nonthermal bio-compatible plasma (bioplasma) sources and their characteristics operating at atmospheric pressure could be used for biological cell interactions, especially for plasma bioscience and medicines. The electron temperatures and plasma densities of this bioplasma are measured to be 0.7 ~ 1.8 eV and $(3-5){\times}10^{14-15}cm^{-3}$, respectively. Herein, we introduced general schematic view of the plasma-initiated ultraviolet photolysis of water inside the biological solutions or living tissue for the essential generation mechanism of the reactive hydroxyl radical [OH] and hydrogen peroxide [$H_2O_2$], which may result in apoptotic cell death in plasma bioscience and medicines. Further, we surveyed the various nonthermal bioplasma sources including plasma jet, micro-DBD (dielectric barrier discharge) and nanosecond discharged plasma. The diseased biological protein, cancer, and mutated cells could be treated by these bioplasma sources or bioplasma activated water to result in their apoptosis for new paradigm of plasma bioscience and medicines.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.