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http://dx.doi.org/10.6117/kmeps.2021.28.4.109

H2 Plasma Pre-treatment for Low Temperature Cu-Cu Bonding  

Choi, Donghoon (Dept. of Mechanical System Design Eng. Seoul National University of Science and Technology)
Han, Seungeun (Dept. of Mechanical System Design Eng. Seoul National University of Science and Technology)
Chu, Hyeok-Jin (Dept. of Mechanical System Design Eng. Seoul National University of Science and Technology)
Kim, Injoo (Dept. of Mechanical System Design Eng. Seoul National University of Science and Technology)
Kim, Sungdong (Dept. of Mechanical System Design Eng. Seoul National University of Science and Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.28, no.4, 2021 , pp. 109-114 More about this Journal
Abstract
We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.
Keywords
hydrogen plasma; Cu bonding; DCB; adhesion energy;
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