OPTICAL EMISSION SPECTROSCOPY OF Ch$_4$/Ar/H$_2$ GAS DISCHARGES IN RF PLASMA CVD OF HYDROGENATED AMORPHOUS CARBON FILMS

  • Lee, Sung-Soo (Department of Materials Processing Engineering, School of Engineering, Nagoya University) ;
  • Osamu Takai
  • Published : 1996.12.01

Abstract

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

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