한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)

한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

ICP-CVD를 이용한 $SnO_2$ 박막 저온 증착

Low temperature preparation of $SnO_2$ films by ICP-CVD

  • Lee, H.Y. (School of Material Science and Engineering, Seoul National University) ;
  • Lee, J.J. (School of Material Science and Engineering, Seoul National University)
  • 발행 : 2007.04.05
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

키워드