• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• Nuclear Engineering and Technology
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• v.18 no.3
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• pp.200-208
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• 1986

The loss of coolant accident based on a double-ended cold leg break is analyzed with the discharge coefficient (Ca) of 0.4. This analysis covers the whole transient period from the start of depressurization to the complete refilling of the core by using RELAP4/MOD6-EM and RELAP4/ MOD6-HOT CHANNEL for the system thermal-hydraulics and the fuel performance during the blowdown phase respectively, and RELAP4/MOD6-FLOOD and TOODEE2 during the reflood phase. A simple analytical method has been developed to account for the lower plenum filling by approximating steam-water countercurrent flows and superheated wall effects at the downcomer during the refill period. Based on the informations. at the time of EOB (end-of-bypass), the refill duration time and the initial reflooding temperature were estimated and compared with the results from the RELAP4/MOD6, resulting in a good agreement. In addition, some parametric studies on the EOB were performed. The form loss coefficient between upper head and upper downcomer was found to be sensitive to the occurrence of the spurious EOB. Appropriate form loss coefficients should be taken into account to avoid the flow oscillations at the downcomer. The analyses with the six and three volume core nodalizations, respectively, show much similar trends in the system thermal-hydraulic performance, but the former case is recommended to obtain good results.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.188-198
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• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.56 no.4
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• pp.322-339
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• 2020

Temporal and spatial fluctuations of surface water temperature in Yeosu Bay for the period from 2010 to 2011 were studied using the data from temperature monitoring buoys deployed at 32 stations in the south coast of Korea. Temperatures in the northern part of the bay are higher in summer and lower in winter than in the southern part of the bay. The lowest and highest temperature of the annual mean are found at the eastern coast of POSCO and at the west of Dae Island, respectively. Cold water masses appear at estuarine area when the discharge of Sumjin river is affluent. Amplitude of temperature fluctuation whose period is less than semi-diurnal is largest at Hadong coast and around Dae Island. Spectral analysis of surface water temperature shows a significant peak at a periodic fluctuation of 0.5 to 24 days and about 15-day period of predominant fluctuation is most frequent in Yeosu Bay. From the cross-correlation analysis of temperature fluctuations, Yeosu Bay can be classified into six areas; the south area affected by South Sea of Korea, the mixed area in the center of the bay, the estuarine area affected by river discharge at the north of the bay, the hot waste water area near Hadong coast, the area around Dae Island and the area near Noryang Channel affected by the water in Jinju Bay, respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.5
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• pp.541-549
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• 2022

This study investigates anti-icing design by conjugate heat transfer analysis in lab-scale printed circuit heat exchanger (PCHE) for supply of cryogenic high pressure liquid hydrogen. The conjugate heat transfer analysis by using computational dynamics (CFD) provided various temperature distributions at important locations in PCHE heat exchanger and predicted the possibility of freezing in hot channel. And, the effect of inlet temperature of glycol water was analyzed in order to resolve the freezing problem in PCHE.

• Journal of the Korean Society of Propulsion Engineers
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• v.7 no.4
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• pp.46-52
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• 2003

This paper presents the numerical thermal analysis for regeneratively cooled rocket thrust chambers. An integrated numerical model incorporates computational fluid dynamics for the hot-gas thermal environment, and thermal analysis for the liner and coolant channels. The flow and temperature fields in rocket thrust chambers is assumed to be axisymmetric steady state which is presumed to the combustion liner. The heat flux computed from nozzle flow is used to predict the temperature distribution of the combustion liner As a result, we present the wall temperature of combustion liner and the temperature change of coolant.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.3175-3180
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• 2008

A metal-fueled pool-type liquid metal fast reactor (LMFR) provides large margins to sodium boiling and fuel damage under accident conditions. The favorable passive safety results are obtained by both a reactivity feedback mechanism in the core and a passive decay heat removal system. Among the various reactivity feedbacks, the ones by a thermal expansion of a radial dimension of the core and by the control rod drivelines are strongly dependent on the flow conditions in the core and the hot pool, respectively. The effects of multidimensional thermal hydraulic characteristics on these reactivity feedbacks are investigated by the system-wide safety analysis code SSC-K with advanced thermal hydraulics models. Particularly a detailed three dimensional thermal hydraulics reactor core model is integrated into SSC-K for use in a whole system analysis of the passive safety aspects of LMR designs. The model provides fuel and cladding temperatures for every fuel pin in a reactor and coolant temperatures for every coolant sub-channel in the reactor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.442-446
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased parking density. Therefore, it was interested in scaling theory, and full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot carriers in different MOSFET structures. MOSFET structures investigated in this study include a conventional MOSFET with a single source/drain, implant a lightly-doped drain(LDD) MOSFET, and a MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and those are analyzed using TCAD(Technology Computer Aided Design) for scaling and simulation. The scaling has used a constant-voltage scaling method, and we have presented MOSFET´s characteristics such as I-V characteristic, impact ionization, electric field and recognized usefulness of TCAD, providing a physical basis for understanding how they relate to scaling.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.9A
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• pp.1031-1038
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• 2004

The call admission control algorithm of hybrid scheme is proposed to enhance the QoS(quality of service) of attempted multimedia calls. In the initial stage of 3rd generation multimedia services networks, the major limitations include the small sefyice coverage and the limited radio link capacity. Because the initial massive deployment of network elements such as base stations, base station controllers, and mobile switching centers is restricted to populated areas and the other areas should be covered with the fewer network elements, the radio channel resources are hmited and coverage network is supposed to be established. Therefore the QoS of multimedia services is expected to be severely degraded when tentative traffic hot spot occurs frequently. Thus, the blocking probability of attempted calls mcreases when relatively large number of users try to place multimedia calls in a hot spot area of the wireless networks. In this situation, the proposed hybrid scheme can mitigate the degradation of the QoS of multimedia services by using the available radio channels of the neighboring cells.

• Journal of KIISE:Information Networking
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• v.35 no.1
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• pp.56-66
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• 2008

Contention-based forwarding in wireless ad-hoc networks reduces transmission failure rate by selecting one receiver with good channel among multiple receivers. However, contention-based forwarding may increase transmission latency due to the collision problem caused by the simultaneous transmission among multiple receivers. In this paper, we present an analytic model that reflects the delay and collision rate of contention-based forwarding in lossy wireless links. Through the analytic model, we calculate the expected delay and progress in one-hop transmission under given wireless link model and delay model. Based on the analytic results, we observe that delay model should be adapted to wireless link model for optimal performance in contention-based forwarding.