• 대한기계학회논문집A
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• 제33권11호
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• pp.1267-1273
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• 2009

Hot press forming can produce high-strength components by rapidly cooling between closed punch and die after hot forming using quenchable boron steel austenized in a furnace. In the hot press forming process, the cooling rate is influenced by the size, position and arrangement of the cooling channel and the file condition of cooling water in the die. Also, mechanical properties of the final components and operation time are related to cooling rate. Therefore, the design of optimized cooling channel is one of the most important works. In this paper, the effect of position and size of the cooling channel on the cooling rate was investigated by using design of experiment and FE analysis in hot press bending process. Therefore the optimum cooling channel ratio was presented in the HPB.

• Nuclear Engineering and Technology
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• 제20권2호
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• pp.80-87
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• 1988

소형냉각재상실사고(SBLOCA)와 대형냉각재상실사고(LBLOCA)중에 노심의 Average Channel과 Hot Channel에서의 유량분포를 예측하였다. 아울러 REALP5/MOD2 코드를 사용하여 두 채널사이의 교차류고려여부가 실제사고 분석결과에 미치는 영향을 평가하였다. 현재까지 SBLOCA계산에서는 노심을 한개의 채널로 모델하는 것이 충분하다고 판단되어 왔으나 본 계산결과에 의하면 보수적인 계산을 위해서는 Hot Channel 모델링이 필요한 것으로 밝혀졌다. 그러나 LBLOCA Blowdown Phase존에서는 교차류의 고려 여부에 상관없이 Hot Channel 이 Average Channel보다 보수적 인 결과를 가져오며, 교차류의 영향도 미세한 것으로 판명되었다.

• Nuclear Engineering and Technology
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• 제37권5호
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• pp.469-478
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• 2005

The subchannel analysis capability of MARS, a multi-dimensional thermal-hydraulic system code, has been enhanced. In particular, the turbulent mixing and void drift models for the flow-mixing phenomena in rod bundles were improved. Then, the subchannel analysis feature was combined with the existing coupled system thermal-hydraulics (T/H) and 3D reactor kinetics calculation capability of MARS. These features allow for more realistic simulations of both the hot channel behavior and the global system T/H behavior. Using the coupled features of MARS, a coupled analysis of a main steam line break (MSLB) is carried out for demonstration purposes. The results of the calculations are very reasonable and promising.

• 전자공학회논문지A
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• 제30A권12호
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.367-370
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• 2009

Recently, ultra high strength products can be manufactured by the hot press forming process of Boron steel in automotive and electronics industries. In order to get high strength, the hot press forming should be accompanied by quenching process inducing phase transformation. In the study, the heat conductive die and the cooling channel were designed by the numerical simulation and the effect of three different parameters were determined to improve cooling characteristics.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.677-690
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• 2009

A previous study demonstrated that the two-row fuel assembly has much more favorable neutron-physical and thermal-hydraulic behavior than the conventional one-row fuel assemblies. Based on the newly developed two-row fuel assembly, an SCWR core is proposed and analyzed. The performance of the proposed core is investigated with 3-D coupled neutron-physical and thermal-hydraulic calculations. During the coupling procedure, the thermal-hydraulic behavior is analyzed using a sub-channel analysis code and the neutron-physical performance is computed with a 3-D diffusion code. This paper presents the main results achieved thus far related to the distribution of some neutronic and thermal-hydraulic parameters. It shows that with adjustment of the coolant and moderator mass flow in different assemblies, promising neutron-physical and thermal-hydraulic behavior of the SCWR core is achieved. A sensitivity study of the heat transfer correlation is also performed. Since the pin power in fuel assemblies can be non-uniform, a sub-channel analysis is necessary in order to investigate the detailed distribution of thermal-hydraulic parameters in the hottest fuel assembly. The sub-channel analysis is performed based on the bundle averaged parameters obtained with the core analysis. With the sub-channel analysis approach, more precise evaluation of the hot channel factor and maximum cladding surface temperature can be achieved. The difference in the results obtained with both the sub-channel analysis and the fuel assembly homogenized method confirms the importance of the sub-channel analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• 한국정보전자통신기술학회논문지
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• 제11권2호
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• pp.189-194
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• 2018

현재 대부분의 집적회로는 bulk CMOS 기술을 사용해서 제작되고 있으나 전력 소모를 낮추고 die 크기를 줄이기에는 한계점에 도달해있다. 이러한 어려움을 획기적으로 극복할 수 있는 초저전력 기술로서 SOI CMOS 기술이 최근에 크게 각광을 받고 있다. 본 논문에서는 100 nm Thin SOI 기판 위에 제작된 n-채널 MOSFET 소자들의 열전자 효과들의 온도 의존성에 관한 연구 결과들이 논의되었다. 소자들이 LDD 구조를 갖고 있음에도 불구하고 열전자 효과들이 예상보다 더 심각한 것으로 나타났는데, 이는 채널과 기판 접지 사이의 직렬 저항이 크기 때문인 것으로 믿어졌다. 온도가 높을수록 채널에서의 phonon scattering의 증가와 함께 열전자 효과는 감소하였는데, 이는 phonon scattering의 증가는 결과적으로 열전자의 생성을 감소시켰기 때문인 것으로 판단된다.

• 전자공학회논문지D
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• 제36D권5호
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• pp.21-28
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• 1999

Deep Submicron 영역에서 요구되는 고성능 소자로서 자기-정렬된 ESD(Elevated Source/Drain)구조의 MOSFET을 제안하였다. 제안된 ESD 구조는 일반적인 LDD(Lightly-Doped Drain)구조와는 달리 한번의 소오스/드레인 이온주입 과정이 필요하며, 건식 식각 방법을 적용하여 채널의 함몰 깊이를 조정할 수 있는 구조를 갖는다. 또한 제거가 가능한 질화막 측벽을 최종 질화막 측벽의 형성 이전에 선택적인 채널 이온주입을 위한 마스크로 활용하여 hot-carrier 현상을 감소시켰으며, 반전된 질화막 측벽을 사용하여 기존이 ESD 구조에서 문제시될 수 있는 자기-정렬의 문제를 해결하였다. 시뮬레이션 결과, 채널의 함몰 깊이 및 측벽의 넓이를 조정함으로써 충격이온화율(ⅠSUB/ID) 및 DIBL(Drain Induced Barrier Lowering) 현상을 효과적으로 감소시킬 수 있고, 유효채널 길이에 따라 차이가 있으나 두 번의 질화막 측벽을 사용함으로써 hot-carrier 현상이 개선될 수 있음을 확인하였다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 추계학술발표회논문집(1)
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• pp.403-408
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• 1996

The subchannel analysis was performed to verify the behavior of hot channel characteristics and obtain the information to support the core thermal-hydraulic behavior at post-trip steam line break with low flow condition. During this postulated accident, buoyancy-induced cross flow occurs, and the coupled nuclear and thermal-hydraulic interactions become important. The code predictions with TORC are in good agreement with the test data. Under such conditions, the mass flow increase in the hot channel by buoyancy-induced cross flow depends on the parameter $GR^{*}\;/\;Re^2$, and buoyancy effect becomes more noticeable as $GR^{*}\;/\;Re^2$ increases.