• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1065-1070
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• 2007

The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.1769-1785
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• 2021

The Integral Pressurized Water Reactors (IPWRs) as the innovative advanced and generation-III + reactors are under study and developments in a lot of countries. This paper is aimed at the thermal hydraulic study of the hot and average fuel sub-channel in a Generation III + IPWR by loose external coupling to the neutronic simulation. The power produced in fuel pins is calculated by the neutronic simulation via MCNPX2.6 then fuel and coolant temperature changes along fuel sub-channels evaluated by computational fluid dynamic thermal hydraulic calculation through an iterative coupling. The relative power densities along the fuel pin in hot and average fuel sub-channel are calculated in sixteen equal divisions. The highest centerline temperature of the hottest and the average fuel pin are calculated as 633 K (359.85 ℃) and 596 K (322.85 ℃), respectively. The coolant enters the sub-channel with a temperature of 557.15 K (284 ℃) and leaves the hot sub-channel and the average sub-channel with a temperature of 596 K (322.85 ℃) and 579 K (305.85 ℃), respectively. It is shown that the spacer grids result in the enhancement of turbulence kinetic energy, convection heat transfer coefficient along the fuel sub-channels so that there is an increase in heat transfer coefficient about 40%. The local fuel pin temperature reduction in the place and downstream the space grids due to heat transfer coefficient enhancement is depicted via a graph through six iterations of neutronic and thermal hydraulic coupling calculations. Working in a low fuel temperature and keeping a significant gap below the melting point of fuel, make the IPWR as a safe type of generation -III + nuclear reactor.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.5
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• pp.21-26
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• 2016

With the increased desire of TV consumers for interactivity and personalization, IPTV has been rapidly spread in recent years. IPTV can provide a variety of services through hundreds of channels, but the explosion of TV channels makes users even more difficult to find their desired contents. In addition, the channel zapping delay of IPTV is serious due to the limited network bandwidth. To resolve these problems, this paper distinguishes hot and cold channels by exploiting the real-time viewing rate as well as each user's viewing history, and then, maintains hot channels in the hot list, which is searched first during channel navigation and also prefetched to support the preview of channels. Experimental results show that the proposed scheme improves the IPTV channel seek time significantly compared to existing channel seeking interfaces.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.367-370
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• 2009

Recently, ultra high strength products can be manufactured by the hot press forming process of Boron steel in automotive and electronics industries. In order to get high strength, the hot press forming should be accompanied by quenching process inducing phase transformation. In the study, the heat conductive die and the cooling channel were designed by the numerical simulation and the effect of three different parameters were determined to improve cooling characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.239-242
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• 2008

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.759-760
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.2
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• pp.1-6
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• 1983

The reduction of threshold voltage and punchthrough voltage of short channel MOS transistors has been measured experimentally with silicon gate NMOS transistors. The effects of the gate oxide thickness and substrate doping concentration on the threshold voltage and punch-through voltage have also been measured with sample devices with boron implantation and gate oxide thickness of 50 nm and 70 nm. Hot electron emission has been measured by floating gate method for the samples with 3 ${\mu}{\textrm}{m}$ channel length. It has been concluded from this measurement that hot electron emission is not significant for the channel length of 3${\mu}{\textrm}{m}$.