• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.70-77
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• 2016

This paper proposes an optical system for complex holographic display that enhances the quality of the reconstructed three-dimensional image. This work focuses on a new design for an optical system and the evaluation of the complex holographic display, using a single spatial light modulator (SLM) and a circular grating. The optical system is based on a 4-f system in which the imaginary and real information of the hologram is displayed on concentric rectangular areas of the SLM and circular grating. Thus, this method overcomes the lack of accuracy in the pixel positions between two window holograms in previous studies, and achieves a higher intensity of the real object points of the reconstructed hologram than the original phase-reconstructed hologram. The proposed method provides approximately 30% less NMRS (Normal Root Mean Square) error, compared to previous systems, which is verified by both simulation and optical experiment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• ETRI Journal
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• v.41 no.1
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• pp.42-51
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• 2019

The rainbow hologram provides views of reconstruction with rainbow color within a large viewing zone. In our recent paper, a Fourier rainbow holographic display using diffraction grating and a white-light LED source was introduced. In this technique, the rainbow effect is realized by the dispersion of white-light source on diffraction grating, while the slit is implemented numerically by reducing the demands of the space-bandwidth product of the display. This paper presents a novel analysis on the visual perception of the Fourier rainbow holographic display using Wigner distribution. The view-dependent appearance of the image, including multispectral field of view and viewing zone, is investigated considering the observer and the display parameters. The resolution of the holographic view is also investigated. For this, a new quantitative assessment for image blur is introduced using Wigner distribution analysis. The analysis is supported with numerical simulations and experimentally captured optical reconstructions for the holograms of the computer model and real object generated with different slit size, reconstruction distance, and different observation conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.89-92
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• 1998

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. The polarization holographic grating has been formed in amorphous As-Ge-Se-S thin films using two linearly polarized He-Ne laser light. In addition, dffraction efficiency has been measured by the same laser of a relative lower intensity at the same time.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.305-309
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• 2010

Photopolymer films containing fluorescent anthracene polymer, polymethyleneanthracene (PMAn), were prepared with different concentrations of PMAn for holographic recording useful for security documents. The fluorescent photopolymer film showed enhanced fluorescent intensity due to the micro-separation which arose from grating formation and diffusion during photopolymerization. Experimental values of diffraction efficiency were well matched to the simulated values for photopolymers having different PMAn concentrations. Holography patterning was carried out using the fluorescent photopolymer under a photo-mask. A grating was confirmed using microscope techniques in the recorded area under the pattern. Importantly the recorded area showed enhanced fluorescence compared to the unrecorded part, allowing fluorescence patterns at micro scale along with the submicron grating pattern. The fluorescence pattern recorded on the photopolymer film provides additional readability of holographic reading and thus is useful for secure recording and reading of information.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1042-1045
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.4
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• pp.261-271
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• 2008

Holographic volume grating couplers (VGCs) are become increasingly attractive device for the application of optical interconnects because of their higher preferential coupling, dry fabrication processing, compact, and low cost. In this paper, the analysis, design, and implementation of the waveguide-imbedded input-output VGC with $45^{\circ}$ grating slant angle using holographic photopolymer(Dupont HRF600-20) for guided-wave optical interconnection applications, are presented. To show the usefulness of the proposed VGC, we fabricated the VGCs operating at 632.8nm and 1550nm wavelengths and its results are presented. The measured input coupling efficiency of the single VGC with $0.5{\mu}m$ grating period at 632.8nm wavelength is above 86.6% for TE-polarization. The input coupling efficiency of the $1\times2$ VGC with $0.73068{\mu}m$ grating period at 1550nm wavelength is about 90.8%.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.108-113
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• 1996

Periodic gratings for 1.55$\mu$m distributed feedback laser diode (DFB LD) have been fabricated by a holographic interference exposure system using an etalon stabilized Ar ion laser. We obtain a good development condition at developer concentration of 65% and obtain etching rate of 1000$\AA$/min at 20.deg. C by the mixed solution HBr:HNO$_{3}$:H$_{2}$O(1:1:10 in volume ratio). We obtain good first order grating with period of 2400${\AA}[\pm}2{\AA}$ at etching time of 45 sec from grating period and diffraction efficiency measurement, and SEM observation of grating fabricated on InP substrate.