• Title/Summary/Keyword: Hole Design

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Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors

  • Kang, Hara;Jang, Jun Tae;Kim, Jonghwa;Choi, Sung-Jin;Kim, Dong Myong;Kim, Dae Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.519-525
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    • 2015
  • Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

Analytical Models for Breakdown Voltage and Specific On-Resistance of 4H-SiC Schottky Diodes (4H-SiC 쇼트키 다이오드의 해석적 항복전압과 온-저항 모델)

  • Chung, Yong-Sung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.22-27
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    • 2008
  • Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.

Diffraction Properties from Periodic Slot Array in the Upper Wall of Parallel Plate Waveguide (평행평판 도파관의 윗면에 위치한 주기적인 슬롯 배열에 의한 전자파의 회절특성)

  • Park Jin-Taek;Hong Jae-Pyo;Ko Ji-Whan;Cho Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.3 s.94
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    • pp.311-318
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    • 2005
  • Periodically perforated slot structure in the upper wall of the parallel plate waveguide is analyzed with main interest focusing on the diffraction Properties. The Periodic slot array is of infinite extent in one direction and of finite extent in the other direction. Various numerical results for reflection from the slotted section and transmission beyond the slotted section, and the radiation through the slotted section into the upper half space are presented with the height of feeding parallel plate waveguide, single slot size, and the periodicity between slots as parameters. This study is thought to be helpful to the design of the ventilation hole in the TFT-LCD and PDP.

Study on the Conservation and Restoration of Excavated Costume (출토복식의 보존.보수에 관한 연구)

  • An, Myung-Sook
    • Journal of the Korean Society of Costume
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    • v.57 no.3 s.112
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    • pp.14-22
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    • 2007
  • This study is about the excavated costume representing fundamental "Conservation and Restoration". It's not a report of a specific case, but it is a guideline that contains the costume and textile of museum collection. It is not research based on experiments; however, this paper is basically consists of various reported-documents. Followings are the conclusions of this study 1. These are the factors that we have to know to prevent the causes of fabric's degradation. -Light, -Humidity and temperature, -Microscopic organism, -Insect and rodent animal, -Air pollution, -Ph, -Handling 2. Basic principles of conservation and restoration follows are: -Select the Reversible method, -Represent the easily distinguishable repaired place, -Should be acted by an expert or people with experience, -Before the restoration, accurate and specified records should be completed, -Procedure, treatment method, and materials used should be recorded prior to restoration, -Should be cared minimally, -Be cautious when using the conservation materials, -When caring, make sure nothing is against the principle of aesthetic, historic, and form of preservation 3. The types of restoration are type of straight or curve, type of hole, type of without warp or weft, type of special part damage something like sleeve, collar, type of form that is severely damaged, and type of separated pieces. 4. The method of restoration is sewing, stitching, and the combination of sewing and stitching. 5. The restoration seams are welt seam, plain seam, flat felled seam, french seam etc. And there are kinds of used-sewing, such as, broad stitching, backstitch, half backstitch, basking, hemming, saddle stitching etc.

CFD ANALYSIS FOR THERMAL MIXING CHARACTERISTICS OF A FLOW MIXING HEADER ASSEMBLY OF SMART (SMART 유동혼합헤더집합체 열혼합 특성 해석)

  • Kim, Y.I.;Bae, Y.M.;Chung, Y.J.;Kim, K.K.
    • Journal of computational fluids engineering
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    • v.20 no.1
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    • pp.84-91
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    • 2015
  • SMART adopts, very unique facility, an FMHA to enhance the thermal and flow mixing capability in abnormal conditions of some steam generators or reactor coolant pumps. The FMHA is important for enhancing thermal mixing of the core inlet flow during a transient and even during accidents, and thus it is essential that the thermal mixing characteristics of flow of the FMHA be understood. Investigations for the mixing characteristics of the FMHA had been performed by using experimental and CFD methods in KAERI. In this study, the temperature distribution at the core inlet region is investigated for several abnormal conditions of steam generators using the commercial code, FLUENT 12. Simulations are carried out with two kinds of FMHA shapes, different mesh resolutions, turbulence models, and steam generator conditions. The CFD results show that the temperature deviation at the core inlet reduces greatly for all turbulence models and steam generator conditions tested here, and the effect of mesh refinement on the temperature distribution at the core inlet is negligible. Even though the uniformity of FMHA outlet hole flow increases the thermal mixing, the temperature deviation at the core inlet is within an acceptable range. We numerically confirmed that the FMHA applied in SMART has an excellent mixing capability and all simulation cases tested here satisfies the design requirement for FMHA thermal mixing capability.

Analysis of Material Response Based on Chaboche Unified Viscoplastic Constitutive Equation; (CHABOCHE 통합 점소성 구성방정식을 이용한 재료거동해석)

  • Kwak, D.Y.;Im, Y.T.;Kim, J.B.;Lee, H.Y.;Yu, B.
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.11
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    • pp.3516-3524
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    • 1996
  • Service conditions for structures at elevated temperatures in nuclear power plant involve transient thermal and mechanical load levels that are severe enough to caeuse inelastic deformations due to creep and plasticity. Therefore, a systematic mehtod of inelastic analysis is needed for the design of structural components in nuclear poser plants subjected to such loading conditions. In the present investigation, the Chabodhe model, one of the unified viscoplastic constitutive equations, was selected for systematic inelastic analysis. The material response was integrated based on GMR ( generallized mid-point rule) time integral scheme and provided to ABAQUS as a material subroutine, UMAT program. By comparing results obtaned from uniaxial analysis using the developed UMAT program with those from Runge-Kutta solutions and experimentaiton, the validity of the adopted Chaboche model and the numerical stability and accuracy of the developed UMAT program were verified. In addition, the developed material subroutine was applied for uniaxial creep and tension analyses for the plate with a hole in the center. The application further demonstrates usefulness of the developed program.

Extended-FEM for the solid-fluid mixture two-scale problems with BCC and FCC microstructures

  • Sawada, Tomohiro;Nakasumi, Shogo;Tezuka, Akira;Fukushima, Manabu;Yoshizawa, Yu-Ichi
    • Interaction and multiscale mechanics
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    • v.2 no.1
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    • pp.45-68
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    • 2009
  • An aim of the study is to develop an efficient numerical simulation technique that can handle the two-scale analysis of fluid permeation filters fabricated by the partial sintering technique of small spherical ceramics. A solid-fluid mixture homogenization method is introduced to predict the mechanical characters such as rigidity and permeability of the porous ceramic filters from the micro-scale geometry and configuration of partially-sintered particles. An extended finite element (X-FE) discretization technique based on the enriched interpolations of respective characteristic functions at fluid-solid interfaces is proposed for the non-interface-fitted mesh solution of the micro-scale analysis that needs non-slip condition at the interface between solid and fluid phases of the unit cell. The homogenization and localization performances of the proposed method are shown in a typical two-dimensional benchmark problem whose model has a hole in center. Three-dimensional applications to the body-centered cubic (BCC) and face-centered cubic (FCC) unit cell models are also shown in the paper. The 3D application is prepared toward the computer-aided optimal design of ceramic filters. The accuracy and stability of the X-FEM based method are comparable to those of the standard interface-fitted FEM, and are superior to those of the voxel type FEM that is often used in such complex micro geometry cases.

A study on the flow behavior around shallow tunnels and its numerical modelling (천층터널 주변의 흐름거동 및 수치 해석적 모델링기법 연구)

  • Shin, Jong-Ho;Choi, Min-Gu;Kang, So-Ra;Nam, Taek-Soo
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.10 no.1
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    • pp.37-47
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    • 2008
  • Design and construction of tunnels require understanding the influence of groundwater. Particularly, it is essential to know how the drainage conditions at the tunnel boundary affect flow behavior of ground adjacent to the tunnels. In this study flow behavior of a leaking tunnel was investigated using physical model tests for tunnel depths and various hydraulic boundary conditions. Particular concerns were given to flow lines toward tunnels. Test results showed that the boundary conditions hardly influence on flow patterns and time required to reach steady state conditions. It is revealed that with an increase in water depth, flow lines concentrated to the drain holes. The physical tests were numerically simulated. Numerical results showed that the flow behavior was represented appropriately by considering filter-drain hole drainage rather than boundary drainage all over the lining.

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DRAM Package Substrate Using Via Cutting Structure (비아 절단 구조를 사용한 DRAM 패키지 기판)

  • Kim, Moon-Jung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.7
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    • pp.76-81
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    • 2011
  • A new via cutting structure in 2-layer DRAM package substrate has been fabricated to lower its power distribution network(PDN) impedance. In new structure, part of the via is cut off vertically and its remaining part is designed to connect directly with the bonding pad on the package substrate. These via structure and substrate design not only provide high routing density but also improve the PDN impedance by shortening effectively the path from bonding pad to VSSQ plane. An additional process is not necessary to fabricate the via cutting structure because its structure is completed at the same time during a process of window area formation. Also, burr occurrence is minimized by filling the via-hole inside with a solder resist. 3-dimensional electromagnetic field simulation and S-parameter measurement are carried out in order to validate the effects of via cutting structure and VDDQ/VSSQ placement on the PDN impedance. New DRAM package substrate has a superior PDN impedance with a wide frequency range. This result shows that via cutting structure and power/ground placement are effective in reducing the PDN impedance.

A Novel Photonic Crystal Fiber Sensor with Three D-shaped Holes Based on Surface Plasmon Resonance

  • Bing, Pibin;Sui, Jialei;Huang, Shichao;Guo, Xinyue;Li, Zhongyang;Tan, Lian;Yao, Jianquan
    • Current Optics and Photonics
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    • v.3 no.6
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    • pp.541-547
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    • 2019
  • A novel photonic crystal fiber (PCF) sensor with three D-shaped holes based on surface plasmon resonance (SPR) is analyzed in this paper. Three D-shaped holes are filled with the analyte, and the gold film is deposited on the side of three planes. The design of D-shaped holes with outward expansion can effectively solve the uniformity problem of metallized nano-coating, it is beneficial to the filling of the analyte and is convenient for real-time measurement of the analyte. Compared with the hexagonal lattice structure, the triangular arrangement of the clad air holes can significantly reduce the transmission loss of light and improve the sensitivity of the sensor. The influences of the air hole diameter, the distance between D-shaped holes and core, and the counterclockwise rotation angle of D-shaped holes on sensing performance are studied. The simulation results show that the wavelength sensitivity of the designed sensor can be as high as 10100 nm/RIU and the resolution can reach 9.9 × 10-6 RIU.