• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.194-199
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• 2011

In this study, non-stoichiometric 1-x$[(K_{0.5}Na_{0.5})_{0.97}(Nb_{0.96}Sb_{0.04})O_3]$ + x $CeMnO_3$ + 0.8 mol%CuO + 0.2 wt% $Ag_2O$ (x=0, 0.005) ceramics were prepared by a conventional mixed oxide and carbonate method, their dielectric and piezoelectric properties were investigated with the variations of sintering temperature. As $CeMnO_3$ substitution incereased, the density, piezoelectric constant($d_{33}$) and dielectric constant($\varepsilon_r$) were increased and the mechanical quality factor(Qm) was decreased. At the sintering temperature of $1100^{\circ}C$, the density, electromechanical coupling factor($k_p$), dielectric constant($\varepsilon_r$) and piezoelectric constant($d_{33}$) of 0.5mol% $CeMnO_3$ specimen showed the optimun values of 4.475 $g/cm^2$, 0.437, 552 and 166 pC/N, respectively. However, the mechanical quality factor($Q_m$) showed the minimum value of 380.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1056-1060
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• 2004

In this study, 0.96B $i_{0.5}$($Na_{0.84}$ $K_{0.16}$)$_{0.5}$Ti $O_3$ + 0.04SrTi $O_3$ + 0.3 wt% N $b_2$ $O_{5}$+0.2 wt% L $a_2$ $O_3$ + xwt % Mn $O_2$ were investigated as a function of the amount of Mn $O_2$ addition in order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics. With increasing the amount of Mn $O_2$ addition, the density, electromechanical coupling factor( $k_{p}$), piezoelectric constant( $d_{33}$, $g_{33}$) and curie temperature (Tc) showed the maximum value of 5.7 g/㎤, 38 %, 219 pC/N, 26 mVㆍm/N and 32$0^{\circ}C$ at 0.1 wt% Mn $O_2$ addition, respectively, and mechanical quality factor( $Q_{m}$ ) showed the maximum value of 158 at 0.3 wt% Mn $O_2$ addition.ddition.ion.n.

• Journal of Magnetics
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• v.14 no.1
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• pp.1-6
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• 2009

The magnetic properties of ${Bi_x}{Ca_{1-x}}{MnO_3}$ for x = 0.12, 0.13, 0.14, 0.15, and 0.16 were examined by measuring magnetic susceptibility, resistivity and electron magnetic resonance at different temperatures. ${Bi_x}{Ca_{1-x}}{MnO_3}$ showed complicated magnetic structure that varies with temperature and composition, particularly around Bi composition x. 0.15. The aim of this study was to determine how the magnetic and physical properties of ${Bi_x}{Ca_{1-x}}{MnO_3}$ change in this region. In addition, first principles calculations of the magnetic phase of ${Bi_x}{Ca_{1-x}}{MnO_3}$ for x = 0, 0.125, 0.25 were carried out, and the spin state, electric and magnetic characteristics are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.91-95
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• 2008

In this study, in order to develop the composition ceramics for low loss multilayer piezoelectric actuator application, $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ (abbreviated as PZW-PMN-PZT)ceramics according to the amount of $MnO_2$ addition were fabricated using two-stage calcinations method. And also, their dielectric and piezoelectric properties were investigated. At the 0.2 wt% $MnO_2$ added PZW-PMN-PZT ceramics sintered at $930^{\circ}C$, density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$, piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ showed the optimum value of $7.84g/cm^3$, 0.543, 1,392, 318.7 pC/N, 1,536, respectively for low loss multilayer ceramics actuator application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.878-885
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• 2012

In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.763-769
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• 2005

Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

• Journal of Magnetics
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• v.12 no.4
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• pp.141-143
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• 2007

We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.14-17
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• 2014

In this study, lead-free Piezoelectric $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ ceramics were fabricated using mixed oxide method and the effects of various sintering temperature on the structural and electrical properties were investigated. For the $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ (NKN-SCT-$MnO_2$) ceramics sintered at temperatures of $1,025{\sim}1,100^{\circ}C$. The results indicated that all specimens were perovskite single phase formation without any second phase. It has been shown that relative density is increased to increasing sintering temperature. When the sintered temperature at $1,075^{\circ}C$, highest sintered density and maximum value of $4.45g/cm^3$. Average grain size is increased to increasing sintering temperature. The electromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sintering temperature $1,075^{\circ}C$ of NKN-SCT-$MnO_2$ specimens were 0.22, 511, 0.033, 103 and $380^{\circ}C$, respectively.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.174-181
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• 2008

The stability of the cathode materials for Li secondary battery is an important factor for its cyclability. The present paper focuses on the structural stability of $LiNi_{0.5}Mn_{1.5}O_4$ during lithiation/delithiation of Li ions and compared to that of $LiMn_{2}O_4$. $LiMn_{2}O_4$ and $LiNi_{0.5}Mn_{1.5}O_4$ powders are synthesized using a solgel method and their structural and electrochemical properties are investigated by XRD, SEM, and charge-discharge tests. $Li_xMn_2O_4$ and $Li_xNi_{0.5}Mn_{1.5}O_4$(x = 0.9,0.5,0.1) specimens are obtained after charge/discharge tests by controlling the cut-off voltage for XRD and TEM investigation. The charge-discharge tests shows that initial capacity of $LiNi_{0.5}Mn_{1.5}O_4$ is 125 mAh/g and that of LiMn2O4 is around 100 mAh/g. The capacity of $LiNi_{0.5}Mn_{1.5}O_4$ is maintained 95% of its initial capacity whereas the capacity of $LiMn_{2}O_4$ is maintained 65% of its initial capacity.