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http://dx.doi.org/10.4191/KCERS.2005.42.11.763

Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films  

Kim, Eung-Soo (Department of Materials Engineering, Kyonggi University)
Chae, Jung-Hoon (Department of Materials Engineering, Kyonggi University)
Publication Information
Journal of the Korean Ceramic Society / v.42, no.11, 2005 , pp. 763-769 More about this Journal
Abstract
Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.
Keywords
Heat treatment process; Ferroelectric properties; c-axis preferred orientation; Metal-Organic Chemical Vapor Deposition (MOCVD);
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