1 |
N. Fujimura, T. Ishida, T. Yohsimura, and T. Ito, 'EpitaxiallyGrown Film: New Candidate for Nonvolatile Memory Devices,' Appl. Phys. Lett., 69 [7] 1011-13 (1996)
DOI
ScienceOn
|
2 |
F. Bertaut, H. L. Yakel, W. C. Koeiler, and E. F. Forrat, 'On the Crystal Structure of the Manganeses(III) Trioxides of the Heavy Lanthanides and Yttrium,' Acta. Cryst., 16 957-62 (1963)
DOI
|
3 |
N. Fujimura, A. Shu-ichiro, A. Nobuki, and Y. Takeshi, 'Growth Mechanism of Film as a New Candidate for Nonvolatile Memory Devices,' J Appl. Phys., 80 [12] 6497-501 (1996)
|
4 |
K. Werner and D. A. Putinen, 'Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology,' RCA Review, 3 187-206 (1999)
|
5 |
S. L. Miller, J. R. Schwank, R. D. Nasby, and M. S. Rodgers, 'Modeling Ferroelectric Capacitor Switching with Asymmetric Nonperiodic Input Signals and Arbitrary Initial Conditions,' J. Appl. Phys., 70 [5] 2849-60 (1991)
DOI
|
6 |
D. C. Yoo, J. Y. Lee, I. S. Kim, and Y. T. Kim, 'Effect of Post-Annealing on the Microstructure and Ferroelectric Properties of Thin Films on Si,' J. Cryst. Growth, 233 243-47 (2001)
DOI
ScienceOn
|
7 |
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, and T. Ito, 'Ferroelectricity of Thin Films Prepared via Solution,' Appl. Phys. Lett., 75 [5] 719-21 (1999)
DOI
|
8 |
C. V. Thompson and R. Carel, 'Stress and Grain in Thin Films,' J Mech. Phys. Solid., 44 [5] 657-73 (1996)
DOI
ScienceOn
|
9 |
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, and T. Ito, 'Microstructure and Dielectric Properties of Thin Films Prepared by Dip-Coating,' J. Am. Ceram. Soc., 81 [5] 1357-60 (1998)
DOI
ScienceOn
|
10 |
N. Aoki, N. Fujimura, T. Yoshimura, and T. Ito, 'Formation of Films Directly on Si Substrate,' J Cryst. Growth, 174 796-800 (1997)
DOI
ScienceOn
|
11 |
W. S. Hu, Z. G. Liu, and D. Feng, 'The Role of an Electric Field Applied During Pulsed Laser Deposition of and on the Film Orientation,' J. Appl. Phys., 80 [12] 7089-93 (1996)
DOI
ScienceOn
|