• 한국세라믹학회지
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• 제41권5호
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.445.1-445.1
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• 2014

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple structure and low manufacturing cost. The $TiO_2$ film with thickness of $8{\sim}10{\mu}m$, which consists of nanoparticles, acts as both a scaffold with a high surface-to-volume ratio for the dye loading and a pathway to remove the electrons. However, charge carriers have to move across many particle boundaries by a hopping mechanism. So, one dimensional nanostructures such as nanotubes, nanorods and nanowires should improve charge carrier transportation by providing a facile direct electron pathway and lowering the diffusion resistance. However, the efficiencies of DSSCs using one dimensional nanostructures are less than the $TiO_2$ nanoparticle-based DSSCs. In this work, the patterned $TiO_2$ film with thickness of $3{\mu}m$ was deposited using photolithography process to decrease of electron pathway and increase of surface area and transmittance of $TiO_2$ films. Properties of the patterned $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• Current Photovoltaic Research
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• 제8권2호
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.120-124
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• 2016

In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.

• 한국표면공학회지
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• 제39권6호
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• pp.250-254
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• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• 한국진공학회지
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• 제20권2호
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• pp.141-145
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• 2011

ZnO:Al 박막을 RF magnetron sputtering 법을 이용하여 초기 압력에 따라 증착하고 박막의 구조적, 광학적, 전기적 특성을 연구하였다. 초기 압력 변화에 의해 ZnO:Al 박막의 특성의 변화를 확인하였고 고품질의 박막을 얻을 수 있었다. 모든 ZnO:Al 박막에서 (002)면의 우선 배향성을 보였으며 가시광선 영역(400~800 nm)에서 85% 이상의 좋은 투과도를 보였다. 초기 압력이 낮아질수록 결정성, 비저항 그리고 성능지수 특성이 향상됨을 확인하였다. 초기 압력에 따른 비저항의 향상은 결정립 크기 변화에 의한 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.863-867
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• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.