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http://dx.doi.org/10.4313/JKEM.2016.29.2.120

Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors  

Park, Sukhyung (Department of Electrical Engineering, Korea University)
Cho, Kyoungah (Department of Electrical Engineering, Korea University)
Oh, Hyungon (Department of Electrical Engineering, Korea University)
Kim, Sangsig (Department of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.2, 2016 , pp. 120-124 More about this Journal
Abstract
In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.
Keywords
Transparent; Bendable; a-IGZO; TFT;
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