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http://dx.doi.org/10.4191/KCERS.2004.41.5.364

Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition  

Seong, Jin-Wook (P & I Corp., Shinnae Techotown)
Yoon, Ki-Hyun (Department of Ceramic Engineering, Yonsei University)
Kim, Ki-Hwan (P & I Corp., Shinnae Techotow)
Beag, Young-Whoan (P & I Corp., Shinnae Techotow)
Koh, Seok-Keun (P & I Corp., Shinnae Techotown)
Publication Information
Journal of the Korean Ceramic Society / v.41, no.5, 2004 , pp. 364-369 More about this Journal
Abstract
The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.
Keywords
$AlO_x$ thin film; Reactive Ion Beam Sputtering (RIBS); Oxygen partial pressure; Deposition rate; Oxygen Transmission Rate (OTR);
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