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http://dx.doi.org/10.4313/JKEM.2008.21.9.863

The Increase of Photodiode Efficiency by using Transparent Conductive Aluminium-doped Zinc Oxide Thin Film  

Jeong, Yun-Hwan (WRISS)
Jin, Hu-Jie (WRISS)
Park, Choon-Bae (WRISS)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.9, 2008 , pp. 863-867 More about this Journal
Abstract
In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.
Keywords
AZO; Anti-reflection coating; Photodiode; RF magnetron sputtering;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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