• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.1
• /
• pp.135-141
• /
• 2014

In this paper, the device design guideline to reduce the threshold voltage variation with fin width in junctionless MuGFET has been suggested. It has been observed that the threshold voltage variation was increased with increase of fin width in junctionless MuGFETs. To reduce the threshold voltage variation with fin width in junctionless MuGFETs, 3-dimensional device simulation with different gate dielectric materials, silicon film thickness, and an optimized fin number has been performed. The simulation results showed that the threshold voltage variation can be reduced by the gate dielectric materials with a high dielectric constant such as $La_2O_3$ and the silicon film with ultra-thin thickness even though the fin width is increased. Particularly, the reduction of the threshold voltage variation and the subthreshold slope by reducing the fin width and increasing the fin numbers is known the optimized device design guideline in junctionless MuGFETs.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.2
• /
• pp.95-102
• /
• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Korean Journal of Materials Research
• /
• v.18 no.3
• /
• pp.148-152
• /
• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.16 no.4
• /
• pp.165-170
• /
• 2016

The XLPE(or CV) cables installed to deliver high electric power from generator at the power station have operating for the last 40 years in Korea. In 6-8 years from the time of initial operation, the cables in operation start a deteriorating process, depending on the installation and usage conditions. Some cables, even before 6-8 years from the installation, can cause accidents due to the faulty construction or other inadequate environments. In order to prevent cable accident in advance, the regular auditing of power cables are required. For a systematic realization of surveillance and prevention of accidents, we have invented a measuring device. In this paper, we present the device installed at Korean Western Power Co. Ltd., in order to detect the deterioration status of insulation resistances of dielectrics in the cables. We present that the measured results by the device we developed show the deteriorating processes in the cables in operation.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.17 no.6
• /
• pp.83-88
• /
• 2017

In this paper, a 3-port waveguide circulator of Ka-band millimeter-wave for isolation between transmit channel and receive channel at high power transmit mode is designed and fabricated for the seeker of the guided missile and circulator performance is verified through the S-parameter, high power and operation temperature test. At the configuration design, interface design between a seeker antenna and the circulator is considered and half-height of standard waveguide is applied for minimum and light weight body. The shape of permanent magnet and ferrite is optimized by simulation and tuning dielectrics at each port are placed for the best performance. In Fc(center frequency)${\pm}1000MHz$, designed waveguide circulator has below -20 dB return loss, below 0.5 dB insertion loss and below -23 dB isolation. It is found that circulator characteristics is similar to design results.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.5
• /
• pp.207-212
• /
• 2015

Continuous, high-quality supply of electrical energy is the backbone of any modern economy. Any equipment operating at a power station must be reliable and safe. All major power supply components such as transformers, cables, generators, and switchgear need to be kept in perfect operating condition. The lifetime of power cables, used as the main means of transferring electric power, is understood to be about 30 years, from the time of manufacturing. The dielectrics between two conductors of a cable must be able to withstand electrical stresses from high-voltage input. This condition should be verified throughout the lifetime of the cable system. Several techniques, such as VLF-tan${\delta}$, partial discharge, and insulation resistance are used in order to determine the operating conditions of cables. In this paper, we present our work on insulation resistance to diagnose cables in operation at the Western Power station in Taean, Chungcheong Namdo Province, South Korea. As a result we have found cables the life time of which is 38 years.

• Journal of the Korean Ceramic Society
• /
• v.45 no.11
• /
• pp.701-706
• /
• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.3
• /
• pp.34-37
• /
• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.2
• /
• pp.88-92
• /
• 2020

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO₂ and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.237.1-237.1
• /
• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.