• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.76-76
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• 2008

The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.202-206
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• 2005

The present investigation provides an electromagnetic radiation absorptive composition which comprises silver-coated ferrite microspheres dispersed in silicon rubber matrix for the aim of thin microwave absorber in GHz frequencies. Ni-Zn ferrite spheres with $50{\mu}m$ size in average were prepared by spray-drying and sintering at $1130^{\circ}C$. Conductive silver layer was plated on ferrite spheres by electroless plating. Conductive Ni-Zn ferrite sphere with uniform silver layer were obtained in the concentration of 10 g/L $AgNO_3$ per 20 g ferrite spheres. For this powder, electrical resistance is reduced as low as $10^{-2}\~10^{-3}\;\Omega$. The most sensitive material parameters with silver plating is real and imaginary parts of complex permittivity. The conductive Ni-Zn ferrite spheres have large values of dielectric constant. Due to this high dielectric constant of microspheres, matching thickness is reduced to as low as 2 mm at the frequency of 7 GHz, which is much thinner than conventional ferrite absorbers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.440-448
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• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.

• Polymer(Korea)
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• v.32 no.1
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• pp.90-93
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• 2008

We developed a variety of polymeric jelly phantoms that can be used in hyperthermia using an electromagnetic wave as an auxiliary cancer therapy. Particularly, using an appropriate material composed of polyethylene, deionized water, and sodium chloride, jelly phantoms for brain was prepared. Also, their electrical properties were characterized by measuring the dielectric constant and conductivity. As the results, overall electrical values of the phantoms decreased with increasing the amount of the components of the materials, excepted for sodium chloride. Additionally, storage characteristics of the phantoms showed a sustainable stability up to 6 months. Based on the experimental results, it can be proposed that jelly phantoms containing a ferro-magnetic particle could be a potential material for cancer therapy following the further study on the temperature elevation effect and the evaluation of electromagnetic properties of the materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.