• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.629-632
• /
• 1998

This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.

• 한국전기전자재료학회논문지
• /
• 제20권12호
• /
• pp.1049-1055
• /
• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• 한국전자파학회논문지
• /
• 제19권3호
• /
• pp.311-320
• /
• 2008

본 논문에서는 종래의 접지된 능동 인덕터 구조와 궤환 가변 LC-공진기를 이용한 새로운 가변 능동 인덕터를 제안하였다. 접지된 능동 인덕터는 자이레이터-C 구조로 구현되며, 가변 LC-공진기는 낮은 Q 지수를 갖는 나선 인덕터와 바렉터로 이루어진다. 가변 LC-공진기는 트랜지스터의 기생 커패시턴스에 의한 Q 지수의 감소를 보상하며, LC-공진기의 공진 주파수 조절에 의해 높은 Q 지수를 갖는 주파수 대역을 가변할 수 있다. 매그나칩 $0.18{\mu}m$ 공정을 이용하여 제작된 가변 능동 인덕터는 $4.66{\sim}5.45GHz$ 대역에서 바랙터 제어 전압 조정에 의해 높은 Q 지수를 갖는 주파수를 조정할 수 있으며, 동자 대역에서 50 이상의 Q 지수를 제공한다. 또한, 바렉터 제어전압 조정으로 5.1 GHz에서 $4.12{\sim}5.97nH$의 가변 인덕턴스 값을 얻을 수 있었다.

• 대한전자공학회논문지TC
• /
• 제39권12호
• /
• pp.559-565
• /
• 2002

현재 RFIC를 위해 실리콘 기판상에 구현되는 인덕터의 Q 값은 12 이하로 알려져있기 때문에, 고성능 회로설계를 위해서는 더욱 높은 Q 값을 갖는 인덕터의 구현이 필수적이다. 본 논문에서는 본드와이어를 이용하여 높은 Q 값을 가지는 두 개의 인덕터를 제안하였고, 동일한 인덕터에 PGS를 적용하여 총 4가지 형태의 인덕터를 구현하였다. 제안된 본드와이어 인덕터는 일반적인 금속선로보다 넓은 단면적 때문에 상대적으로 작은 도체 손실을 갖고, 인덕터의 상당부분이 공기 중에 위치하므로 기생 캐패시턴스 성분을 줄일 수 있다. 해석 및 측정결과 1.5 GHz 에서 기존의 나선형 인덕터보다 상당히 개선된 15이상의 Q 값을 가짐을 확인하였다. 또한 자동 본딩 머신을 사용하여 구현하기 때문에, 동일한 형태의 인덕터를 반복적으로 쉽게 만들 수 있다.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
• /
• pp.218-221
• /
• 2001

In this paper, High Q Inductor using negative resistance circuit and the ceramic inductor was designed and fabricated at 2GHz. It was Improved the inductor of Q=90 using a inductor with Q=30 added to negative resistance circuit at 2GHz. As a result, at the bias condition of 3V and 16mA, the output power and phase noise in the operation frequency 2.01GHz are 5dBm and -115.34dBc/Hz at 100kHz offset from carrier, respectively. Phase noise was improved -10dBc/Hz at 100kHz offset compared to only using ceremic inductor.

• 전자공학회논문지D
• /
• 제34D권9호
• /
• pp.28-35
• /
• 1997

A novel high-Q vertical jinductor for MMICs is proposed and characterized in a wide range of frequencies (DC~10 GHz) using the numerical methods such as the PeEC(partial equivalent element circuit), the FDM (finite difference method) and the MoM (method of moments). Electrical superiority of the vertical inductor to the horizontal is observed in terms of the magnetic flux linkage and the ground screening effect. The veritcal bondwire inductor is designed in consideration of the wire bonding feasibility and the optimum electrical peformance. This structure is also analyzed using the equivalent circuit and compared with the conventional spiral inductors From the calculated results, high Q-factor, inductance, and cut-off frequency are observed to be inherent characteristics of the veritcal bondwire inductor.

• Journal of Power Electronics
• /
• 제16권5호
• /
• pp.1716-1724
• /
• 2016

This paper proposes both an active-switched quasi-Z-source inverter (AS-qZSI) and an extended active-switched qZSI (EAS-qZSI), which are based on the classic qZSI. The proposed AS-qZSI adds only one active switch and one diode to the classic qZSI for increasing the voltage boost capability. Compared with other topologies based on the switched-inductor/capacitor qZSI, the proposed AS-qZSI requires fewer passive components in the impedance network under the same boost capability. Additionally, the proposed EAS-qZSI is designed by adding one inductor and three diodes to the AS-qZSI, which offers enhanced boost capability and lower voltage stress across the switches. The performances of the two proposed topologies are verified by simulation and experimental results obtained from a prototype with a 32-bit DSP built in a laboratory.

• 대한전자공학회논문지SD
• /
• 제45권2호
• /
• pp.125-129
• /
• 2008

본 논문에서는 Q값(Q-factor)을 증가시킬 수 있는 저전압 능동(active) CMOS 인덕터를 제안하고 설계하였다. Q값을 증가시키기 위한 방법으로 저전압 능동 CMOS 인덕터에 피드백 저항을 삽입하여 등가적인 인덕턴스와 Q값을 증가시켰다. 저전압 능동 CMOS 인덕터는 0.18um 표준 CMOS 공정으로 설계하였으며 모의실험은 애질런트사의 ADS 시뮬레이터를 이용하였다. 모의 실험결과 설계된 피드백 저항을 삽입한 저전압 능동 CMOS 인덕터는 4GHz에서 1.5nH의 인덕턴스와 최대 3000이상의 Q값을 가졌고 소비전력은 5.4mW였다.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
• /
• pp.294-298
• /
• 2003

In this paper, the modeling and design of high-Q multilayer passives have been investigated, and multilayer diplexer for GSM/DCS applications has been designed and fabricated using the passives. To minimize the system, the configuration of a multilayer inductor has involved a square spiral structure. Modeling of a multilayer inductor was performed by the subsystems of distributed components, and using the modeling the optimal structures of the high-Q multilayer inductor could be designed by analyzing parasitics and couplings which affect their frequency characteristics. Multilayer diplexer for GSM/DCS application has been designed and fabricated using LTCC technology. LPF for GSM band had the passband insertion loss of less than 0.55 dB, the return loss of more than 12 dB, and the isolation level of more than 26 dB by locating attenuation pole at 1800 MHz. HPF for DCS band had the passband insertion loss of less than 0.82 dB, the return loss of more than 11 dB, and the isolation level of more than 38 dB by locating attenuation pole at 930 MHz.

• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.375-379
• /
• 2003

In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.