• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.69-74
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• 2015

Recently, energy harvesting technology is increasing due to the fossil fuel shortages. Energy harvesting is generating electrical energy from wasted energies as sunlight, wind, waves, pressure, and vibration etc. Energy harvesting is one of the alternatives of fossil fuel. One of the energy harvesting technologies, the piezoelectric energy harvesting has been actively studied. Piezoelectric generating uses a positive piezoelectric effect which produces electrical energy when mechanical vibration is applied to the piezoelectric device. Piezoelectric energy harvesting has an advantage in that it is relatively not affected by weather, area and place. Also, stable and sustainable energy generation is possible. However, the output power is relatively low, so in this paper, newly designed honeycomb shaped piezoelectric energy harvesting device for increasing a generating efficiency. The output characteristics of the piezoelectric harvesting device were analyzed according to the change of parameters by using the finite element method analysis program. One model which has high output voltage was selected and a prototype of the honeycomb shaped piezoelectric harvesting device was fabricated. Experimental results from the fabricated device were compared to the analyzed results. After the AC-DC converting, the power of one honeycomb shaped piezoelectric energy harvesting device was measured 2.3[mW] at road resistance 5.1[$K{\Omega}$]. And output power was increased the number of harvesting device when piezoelectric energy harvesting device were connected in series and parallel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Journal of Power Electronics
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• 제16권1호
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• pp.297-309
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• 2016

Grid-connected inverters (GCIs) with an LCL output filter have the ability of attenuating high-frequency (HF) switching ripples. However, by using only grid-current control, the system is prone to resonances if it is not properly damped, and the current distortion is amplified significantly under highly distorted grid conditions. This paper proposes a synchronous reference frame equivalent proportional-integral (SRF-EPI) controller in the αβ stationary frame using the parallel virtual resistance-based active damping (PVR-AD) strategy for grid-interfaced distributed generation (DG) systems to suppress LCL resonance. Although both a proportional-resonant (PR) controller in the αβ stationary frame and a PI controller in the dq synchronous frame achieve zero steady-state error, the amplitude- and phase-frequency characteristics differ greatly from each other except for the reference tracking at the fundamental frequency. Therefore, an accurate SRF-EPI controller in the αβ stationary frame is established to achieve precise tracking accuracy. Moreover, the robustness, the harmonic rejection capability, and the influence of the control delay are investigated by the Nyquist stability criterion when the PVR-based AD method is adopted. Furthermore, grid voltage feed-forward and multiple PR controllers are integrated into the current loop to mitigate the current distortion introduced by the grid background distortion. In addition, the parameters design guidelines are presented to show the effectiveness of the proposed strategy. Finally, simulation and experimental results are provided to validate the feasibility of the proposed control approach.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• 한국분말재료학회지
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• 제28권2호
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• pp.127-133
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• 2021

One-dimensional (1D) piezoelectric nanostructures are attractive candidates for energy generation because of their excellent piezoelectric properties attributed to their high aspect ratios and large surface areas. Vertically grown BaTiO₃ nanotube (NT) arrays on conducting substrates are intensively studied because they can be easily synthesized with excellent uniformity and anisotropic orientation. In this study, we demonstrate the synthesis of 1D BaTiO₃ NT arrays on a conductive Ti substrate by electrochemical anodization and sequential hydrothermal reactions. Subsequently, we explore the effect of hydrothermal reaction conditions on the piezoelectric energy conversion efficiency of the BaTiO₃ NT arrays. Vertically aligned TiO₂ NT arrays, which act as the initial template, are converted into BaTiO₃ NT arrays using hydrothermal reaction with various concentrations of the Ba source and reaction times. To validate the electrical output performance of the BaTiO₃ NT arrays, we measure the electricity generated from each NT array packaged with a conductive metal foil and epoxy under mechanical pushings. The generated output voltage signals from the BaTiO₃ NT arrays increase with increasing concentration of the Ba source and reaction time. These results provide a new strategy for fabricating advanced 1D piezoelectric nanostructures by demonstrating the correlation between hydrothermal reaction conditions and piezoelectric output performance.

• 미래기술융합논문지
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• 제2권3호
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• pp.17-24
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• 2023

하이브리드 자동차를 연구로 목적으로 논문을 설계합니다. 히이브리드 자동차는 내연 기관과 배터리 엔진을 동시에 장착하여 기존의 일반 차량에 비해 연비와 유해가스 배출량을 획기적으로 줄인 차세대 자동차로 전기모터는 차량 내부에 장착된 고전압 배터리로부터 전원을 공급받고, 배터리는 자동차가 움직일 때 다시 충전되는 시스템을 가진 차를 연구로 기존 자동차의 에너지 손실은 대부분 교통 혼잡에 따른 공회전을 보완해 차량의 속도나 주행 상태 등에 따라 시간과 차량 정지시 발생하는데 하이브리드 시스템은 이 같은 가솔린 또는 디젤 엔진의 단점엔진과 모터 힘을 적절하게 제어함으로써 효율성을 극대화시킨 차라고 할 수 있다. 하이브리드 차는 연비 개선, 환경 친화성, 경제성, 노이즈 감소 등 다양한 장점을 가지고 있어서 점차 많은 사람들에게 선택되고 있는 대안적인 자동차 옵션입니다. 해당 연구를 통해 환경오염을 방지하고 미래 자동차 연구를 위해 노력을 기울일수 있을 것입니다.

• 해양환경안전학회지
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• 제29권2호
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• pp.223-229
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• 2023

해수이차전지는 해수를 양극으로 사용하는 차세대 이차전지이다, 해양 자원을 사용하여 가격 경쟁력과 높은 친환경성, 그리고 해양 애플리케이션에 적합한 구조를 가진다. 이러한 장점을 기반으로 지속적 연구개발을 통해 자연 해수 노출을 가정한 파우치 타입 및 각형 타입이 개발되어 왔다. 그러나 이차전지는 전기적 특성상 사용 환경에 따라 용량 및 내부 임피던스가 달라진다. 이러한 특성은 전지의 수명 예측에 활용될 뿐만 아니라 활용하고자 하는 상황에 맞는 용량과 출력에 직접적인 영향을 미친다. 따라서 본 논문에서는 해수이차전지의 사용 환경에 따른 용량 측정과 SoC-OCV 측정 방법을 통한 내부 저항을 분석하고자 한다.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국입자에어로졸학회지
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• 제19권3호
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• pp.63-76
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• 2023

An electrostatic precipitator (ESP) has a low pressure drop and a high collection efficiency but its collection efficiency can be reduced due to dust accumulation on the collection plates during long-term operations. In order to maintain the initial dust collection efficiency, it is necessary to periodically clean the collection plates. The common cleaning methods are using physical impacts or water sprays. These cleaning methods can lead to damage to the collection plate or generate wastewater. Herein, we implemented an electrodynamic screen (EDS) for ESP cleaning and evaluated its surface cleaning performance of particles. The EDS is an electrostatic system that can electrostatically repel particles on surfaces, allowing it to clean the ESP without causing damage and wastewater generation. Our evaluation included the analysis of the effects of AC voltage characteristics, electrode configuration and environmental conditions on the cleaning performance of the EDS with the aim of achieving effective surface cleaning. It has been demonstrated that activating the EDS cleans up to 65% of the particles on the surface, which indicates about 94% of our target cleaning zone.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.