• Journal of Semiconductor Engineering
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• v.1 no.2
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• pp.64-73
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• 2020

As CMOS technology scales down, the design of analog signal processing circuit becomes far more difficult because of steadily decreasing supply voltage and smaller intrinsic gain of transistors. With sub-1V supply voltage, the conventional analog signal processing relying on high-gain amplifiers is not an effective solution and different approach has to be sought. One of the promising approaches is "time-domain analog signal processing" which exploits the improving switching speed of transistors in a scaled CMOS technology. In this paper, various time-domain analog signal processing techniques are explained with some experimental results.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1673-1681
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• 2015

A low dropout (LDO) regulator with a wide-bandwidth is proposed in this paper. The regulator features a Human Body Model (HBM) 8kV-class high robustness ElectroStatic Discharge (ESD) protection circuit, and two error amplifiers (one with low gain and wide bandwidth, and the other with high gain and narrow bandwidth). The dual error amplifiers are located within the feedback loop of the LDO regulator, and they selectively amplify the signal according to its ripples. The proposed LDO regulator is more efficient in its regulation process because of its selective amplification according to frequency and bandwidth. Furthermore, the proposed regulator has the same gain as a conventional LDO at 62 dB with a 130 kHz-wide bandwidth, which is approximately 3.5 times that of a conventional LDO. The proposed device presents a fast response with improved load and line regulation characteristics. In addition, to prevent an increase in the area of the circuit, a body-driven fabrication technique was used for the error amplifier and the pass transistor. The proposed LDO regulator has an input voltage range of 2.5 V to 4.5 V, and it provides a load current of 100 mA in an output voltage range of 1.2 V to 4.1 V. In addition, to prevent damage in the Integrated Circuit (IC) as a result of static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class (Chip level) ESD protection circuit of a P-substrate-Triggered Silicon Controlled Rectifier (PTSCR) type with high robustness characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.116-119
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• 2000

A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.53-60
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• 2010

This paper presents a novel gain control system composed of a feedback circuit, Two stage Low Noise Amplifier (LNA) using 0.18 um CMOS technology for 5.2 GHz. The feedback circuit consists of the seven function blocks: peak detector, comparator, ADC, IVE(Initial Voltage Elimination) circuit, switch, storage, and current controller. We focus on detecting signal and designing storage circuit that store the previous state. The power consumption of the feedback circuit in the system can be reduced without sacrificing the gain by inserting the storage circuit. The adaptive front-end system with the feedback circuit exhibits 11.39~22.74 dB gain, and has excellent noise performance at high gain mode. Variable gain LNA consumes 5.68~6.75 mW from a 1.8 V supply voltage.

• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.5
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• pp.372-378
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• 2019

This study proposes a new zero-current-zero-voltage-transition (ZCZVT) boost-flyback converter using a soft switching auxiliary circuit. The proposed converter integrates the boost and flyback converters to increase the voltage with a low duty ratio. The main and auxiliary switches turn the ZCZVT conditions on and off. Thus, the proposed converter has high efficiency. The voltage gain at the steady state is derived, and the inductor volt-second balance and the design guidelines are presented. Finally, the performance of the proposed converter is validated by experimental results from a 200 W, 30 V DC input, 400 V DC output, and 200 kHz boost-flyback converter prototype.

• Journal of Power Electronics
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• v.19 no.1
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• pp.34-43
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• 2019

An improved half-bridge LLC converter with a magamp auxiliary post-regulator is proposed in this paper. The function of the magamp is bypassed when the converter works within the low input-voltage range. Meanwhile, it operates as an auxiliary post-regulator when the input voltage is high. By changing the blocking time of the magamp, the dc gain of the converter can be extended. Hence, the input voltage range of the converter is extended. The realization of proposed topology does not require a complicated circuit. The controller of the magamp can be easily implemented using only passive components, transistors and an OP amp. The generalized operational principle is analyzed and the design criterion for the magamp is presented. Finally, a 25V output, 400W experimental prototype was built and tested for a 160-300V input-voltage range to verify the feasibility of the proposed method.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2173-2181
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• 2016

Permanent magnet synchronous motors (PMSMs) have higher torque and superior output power per volume than other types of AC motors. They are commonly used for applications that require a large output power and a wide range of speed. For precise control of PMSMs, knowing the accurate position of the rotor is essential, and normally position sensors such as a resolver or an encoder are employed. On the other hand, the position sensors make the driving system expensive and unstable if the attached sensor malfunctions. Therefore, sensorless algorithms are widely researched nowadays, to reduce the cost and cope with sensor failure. This paper proposes a sensorless algorithm that can be applied to a wide range of speed. The proposed method features a robust operation at low-speed as well as high-speed ranges by employing a gain adjustment scheme and intermittent voltage pulse injection method. In the proposed scheme the position estimation gain is tuned by a closed loop manner to have stable operation in tough driving environment. The proposed algorithm is fully verified by various experiments done with a 1 kW outer rotor-type PMSM.