• Journal of electromagnetic engineering and science
• /
• 제11권1호
• /
• pp.27-33
• /
• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• 전기의세계
• /
• 제18권5호
• /
• pp.12-19
• /
• 1969

The sensitivity of transistorized d.c. amplifiers is mainly limited by drift at operating point caused by ambient temperature changes. A chopper-type transistorized amplifier is necessary to obtain a high sensitivity without recourse to drift compensation which requires the adjustment of several balancing controls. A chopper-stabilized system consisting of an electro-mechanical chopper for input and output and a high-gain a.c. amplifier is designed and analyzed. The gain of the a.c. amplifier, expressed as the ratio of voltages, is larger than 80db in the band of 50C/S - 100KC/S. The complete system gives an open-loop gain of 68db at direct current. The offset voltage is 20.mu.V referred in input and the voltage drift at the input is less than 10.mu.V/hr at 25.deg.C. This type of amplifier would be useful for the high-gain transistorized d.c. amplifier for analog computers. Also, due to the high input impedance, it is suitable for amplification of signals from wide range of source impedances.

• 전력전자학회논문지
• /
• 제17권6호
• /
• pp.500-506
• /
• 2012

In this paper, a non-isolated high step-up and high efficiency boost converter is proposed. By using the 3-level boost converter structure, the proposed converter can obtain higher voltage gain than conventional high step-up converters. The voltage spike of the switching device is well clamped by using the clamp circuit composed of a clamp diode and a capacitor and the energy of the leakage inductor of coupled inductor is effectively transferred to output. Due to the 3-level structure, the equivalent switching frequency of the coupled inductor is doubled, which results in reduced inductor size. A 500 W prototype converter is built and tested to verify performance of the proposed converter.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2019년도 전력전자학술대회
• /
• pp.11-13
• /
• 2019

This paper proposes a novel high step-up non-isolated DC-DC converter, suitable for regulating dc bus in various inherent low voltage micro sources especially for photovoltaic (PV) and fuel cell sources. This novel high voltage Non-isolated Boost DC-DC converter topology is best replacement, where high voltage conversion ratio is required without the transformer and also need continuous input current. Since the proposed topology utilizes the stack-based structure, the voltage gain, and the efficiency are higher than other conventional non-isolated converters. Switches in this topology is easier to control since its control signal is grounding reference. Also, there is no need of extra gate driver and extra power supply for driver circuit, which reduces the cost and size of system. In order to show the feasibility and practicality of the proposed topology principle operation, steady state analysis and simulation result is presented and analyzed in detail. To verify the performance of proposed converter and theoretical analysis 360W laboratory prototype is implemented.

• 한국전기전자재료학회논문지
• /
• 제14권11호
• /
• pp.885-891
• /
• 2001

Ring/dot-type step-down piezoelectric transformer was manufactured by using Pb[(Mn$\sub$1/3/Sb$\sub$2/3)$\sub$0.05/Zr$\sub$0.475/Ti$\sub$0.475/]O$_3$ ceramics, which have excellent high-power piezoelectric properties. The characteristics of step-down piezoelectric transformer as a function of load resistance at output terminal was examined. Voltage gain was greatly dependent on drive frequency and load resistance, and showed maximum voltage gain at the resonance frequency. The output voltage was linearly increased as the input voltage increased. Voltage gain of the step-down piezoelectric transformer with respect to input voltage was very stable when the load resistance was in the range of 50-500 $\Omega$ .

• 전기전자학회논문지
• /
• 제15권1호
• /
• pp.37-42
• /
• 2011

본 논문에서는 0.35 um BCD 공정을 통한 고내압 BCD 소자와 새로운 구조의 BCD 소자를 제작하여 전기적 특성을 분석하였다. 20 V급 BJT 소자, 30/60 V급 HV-CMOS, 40/60 V급 LDMOS 소자의 전기적 특성을 분석하고, 동일 공정을 통해 높은 전류 이득을 갖는 수직/수평형 NPN BJT와 고내압 특성의 LIGBT 소자를 제안하였다. 제안된 수직/수평형 NPN BJT의 항복전압은 15 V, 전류이득은 100으로 측정되었으며, 고내압 특성의 LIGBT의 항복전압은 195 V, 문턱전압은 1.5 V, Vce,sat은 1.65 V로 측정 되었다.

• ETRI Journal
• /
• 제29권6호
• /
• pp.785-793
• /
• 2007

In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

• 조명전기설비학회논문지
• /
• 제26권4호
• /
• pp.57-66
• /
• 2012

When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.

• Journal of Power Electronics
• /
• 제18권3호
• /
• pp.672-680
• /
• 2018

A bidirectional exponential-gain switched-capacitor (SC) DC-DC converter is developed in this paper. When compared with existing exponential SC converters, the number of switches is significantly reduced and its structure is simplified. The voltage transfer features, voltage ripple across capacitors, efficiency and output impedance of the proposed converter are analyzed in detail. Optimization of the output impedance is also discussed and the best type of capacitance distribution is determined. A common function of the voltage gain to the output impedance is found among the proposed converter and other popular SC voltage multipliers. Experimental evaluation is carried out with a 6-24V bidirectional prototype converter.

• 한국전자통신학회논문지
• /
• 제8권10호
• /
• pp.1477-1483
• /
• 2013

연속시간 전류모드 기저대역 채널선택 필터 설계를 위하여 전류이득과 단위이득 주파수를 개선시킨 저전압 선형 캐스코드 전류모드 적분기를 제안하였다. 제안된 전류모드 적분기는 CMOS 상보형 회로로 구성된 완전 차동 형태의 입 출력단으로 구성하였으며, 여기에 캐스코드 트랜지스터를 추가시킴으로써 바이어스 단을 구성하여 선형영역에서 동작시켜 저전압 구조에 적합하도록 설계하였다. 이 때 바이어스 전압을 선택적으로 제어하여 주파수 대역이 가변될 수 있도록 설계하였다. 시뮬레이션 결과를 통해 설계한 선형 캐스코드 전류모드 적분기가 저전압 동작, 전류 이득 및 단위이득 주파수 등 모두 만족할 만한 특성을 가지고 있음을 확인하였다.