• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• 한국진공학회지
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• 제18권1호
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• pp.60-65
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• 2009

본 연구에서는 분광타원분석법을 이용하여 최근 주목 받고 있는 microwave dielectric materials 인 $BaSm_2Ti_4O_{12}$ 박막의 광 특성을 $0.92{\sim}8.6\;eV$ 에너지 영역에서 분석하였다. 광역 에너지영역에서 측정이 가능한 Vacuum Ultra Violet spectroscopic ellipsometer를 사용하여 시료의 광 스펙트럼을 측정 하였으며, 측정된 스펙트럼으로부터 $BaSm_2Ti_4O_{12}$ 박막의 광 특성을 얻기 위하여 Tauc-Lorentz 분산 함수를 이용하였고, 고 에너지 영역대의 새로운 피크구조 (structure) 를 최초로 발견하였다.

• 센서학회지
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• 제13권4호
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• 센서학회지
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• 제14권2호
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of Electrical Engineering and Technology
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• 제5권1호
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• pp.146-150
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• 2010

A new type of dye-sensitized solar cell (DSC) based on a porous type Ti electrode without using a transparent conductive oxide (TCO) layer is fabricated for low-cost high-efficient solar cell application. The TCO-free DSC is composed of a glass substrate/dye-sensitized $TiO_2$ nanoparticle/porous Ti layer/electrolyte/Pt sputtered counter electrode. The porous Ti electrode (~350 nm thickness) with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3{^-}$ through the hole. The vacuum annealing treatment is important with respect to the interfacial necking between the metal Ti and porous $TiO_2$ layer. The efficiency of the prepared TCO-free DSC sample is about 3.5% (ff: 0.48, $V_{oc}$: 0.64V, $J_{sc}$: 11.14 mA/$cm^2$).

• 한국재료학회지
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• 제31권3호
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• pp.156-161
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• 2021

Cr-Si based alloys are not only excellent in corrosion resistance at high temperatures, but also have good wear resistance due to the formation of Cr3Si phase, therefore they are promising as metallic coating materials. Aluminum is often added to Cr-Si alloys to improve the oxidation resistance through which stable alumina surface film is formed. On the other hand, due to the addition of aluminum, various Al-containing phases may be formed and may negatively affect the heat resistance of the Cr-Si-Al alloys, so detailed investigation is required. In this study, two Cr-Si-Al alloys (high-Si & high-Al) were prepared in the form of cast ingots through a vacuum arc melting process and the microstructural changes after high temperature heating process were investigated. In the case of the cast high-Si alloy, a considerable amount of Cr3Si phase was formed, and its hardness was significantly higher than that of the cast high-Al alloy. Also, Al-rich phases (with the high Al/Cr ratio) were not found much compared to the high-Al alloy. Meanwhile, it was observed that the amount of the Al-rich phases reduced by the annealing heat treatment for both alloys. In the case of the high temperature heating at 1,400 ℃, no significant microstructural change was observed in the high Si alloy, but a little more coarse and segregated AlCr phases were found in the high Al alloy compared to the cast state.

• 한국진공학회지
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• 제21권6호
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• pp.348-353
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• 2012

스퍼터를 이용하여 실리콘 기판위에 제작된 안티몬-테레니움 다결정 박막을 방사광을 이용한 고해상도 엑스선 광전자 분광법 실험을 수행하여 화학적 상태를 분석하였다. 엑스선 회절 실험을 통해 제작된 안티몬-테레니움 박막은 롬보헤드럴 구조를 가지는 다결정임을 확인하였다. 엑스선 광전자분광법을 수행하기 위하여 표면의 산화막 제거를 위해 저에너지 네온 이온 스퍼터링을 빔에너지 1 kV로 1 시간동안 수행하였고, 이를 통해 표면 산화막이 완벽히 제거됨을 확인하였다. 또한, 스퍼처링에 의하여 표면 비정질화된 상태를 결정화 상태로 만들기 위해 상변화온도인 $100^{\circ}C$에서 5 분간 초고진공상태에서 열처리를 수행하였다. 이후 획득되어진 테레니움 4d와 안티몬 4d 속전자레벨 분석에서 각각의 묶음에너지가 40.4 그리고 33.0 전자볼트임을 확인할 수 있었으며, 각각은 단일한 화학적 상태를 나타내고 얻어진 피크의 밀도분석을 통해 화학적조성비가 2 : 3임을 확인하였다.

• 한국자기학회지
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• 제23권6호
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• pp.193-199
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• 2013

NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe 이중구조 GMR-SV 박막의 열처리 조건에 의존하는 자기등방성 영역분포 특성을 조사하였다. 진공 챔버내에서 이중구조 GMR-SV 박막을 후열처리 온도를 조절하여 면상에서 강자성체 층의 자화용이축 회전을 유도하였다. 자유층과 고정층의 자화용이축 방향에 의존하는 이중구조 GMR-SV 박막의 자기저항곡선은 외부자기장의 각도를 $0^{\circ}$에서 $360^{\circ}$까지 변화시킨 후 외부자기장의 세기에 따라서 측정하였다. 후열처리 온도가 $107^{\circ}C$일 때, 외부자기장의 방향이 $0^{\circ}$에서 $90^{\circ}$까지 영역에서 자장감응도가 약 1.52 %/Oe인 자기등방성 특성을 보였다. 이러한 특성은 고정층과 자유층을 형성하는 강자성층들이 면상에서 서로 직교한 결과임을 나타내며, 자기등방성 GMR-SV 박막 소자는 임의 방향으로 자화된 마이크로 자성비드를 검출할 수 있는 고감도 바이오센서로 사용할 가능성을 제시하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.