Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb2Te3 Thin Film with the Polycrystalline Phase

고해상도 엑스선 광전자 분광법을 이용한 다결정구조의 안티몬-테레니움 박막 연구

  • Lee, Y.M. (Department of Materials Engineering, Chungnam University, Brain Korea 21 Project (BK21)) ;
  • Kim, K. (AE Group, Samsung Advanced Institute of Technology, Samsung Electornics Co. Ltd.) ;
  • Shin, H.J. (Beamline Division, Pohang Accelerator Laboratory, POSTECH) ;
  • Jung, M.C. (Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University) ;
  • Qi, Y. (Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University)
  • 이영미 (충남 대학교 재료공학부 BK21) ;
  • 김기홍 (삼성전자 삼성종합기술원 AE 그룹) ;
  • 신현준 (포스텍 포항가속기연구소 빔라인부) ;
  • 정민철 (오키나와 과학기술대학원 대학 에너지 물질 및 표면 과학 그룹) ;
  • 취야빙 (오키나와 과학기술대학원 대학 에너지 물질 및 표면 과학 그룹)
  • Received : 2012.09.28
  • Accepted : 2012.11.22
  • Published : 2012.11.30
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Abstract

We investigated chemical states of a $Sb_2Te_3$ thin film with the polycrystalline phase by using high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. The $Sb_2Te_3$ thin film was formed by sputtering. The rhombohedral phase was confirmed by x-ray diffraction. To remove the surface oxide, we performed $Ne^+$ ion sputtering for 1 hour with the beam energy of 1 kV and post-annealing at $100^{\circ}C$ for 5 min in ultra-high vacuum. We obtained the Te and Sb 4d core-levels spectra with the peaks at the binding energies of 40.4 and 33.0 eV, respectively. The full-width of half maximum of both the Te and Sb $4d_{5/2}$ core-levels is 0.9 eV. The Te and Sb core-levels only show a single chemical state, and we also confirmed the stoichiometry of approximately 2 : 3.

스퍼터를 이용하여 실리콘 기판위에 제작된 안티몬-테레니움 다결정 박막을 방사광을 이용한 고해상도 엑스선 광전자 분광법 실험을 수행하여 화학적 상태를 분석하였다. 엑스선 회절 실험을 통해 제작된 안티몬-테레니움 박막은 롬보헤드럴 구조를 가지는 다결정임을 확인하였다. 엑스선 광전자분광법을 수행하기 위하여 표면의 산화막 제거를 위해 저에너지 네온 이온 스퍼터링을 빔에너지 1 kV로 1 시간동안 수행하였고, 이를 통해 표면 산화막이 완벽히 제거됨을 확인하였다. 또한, 스퍼처링에 의하여 표면 비정질화된 상태를 결정화 상태로 만들기 위해 상변화온도인 $100^{\circ}C$에서 5 분간 초고진공상태에서 열처리를 수행하였다. 이후 획득되어진 테레니움 4d와 안티몬 4d 속전자레벨 분석에서 각각의 묶음에너지가 40.4 그리고 33.0 전자볼트임을 확인할 수 있었으며, 각각은 단일한 화학적 상태를 나타내고 얻어진 피크의 밀도분석을 통해 화학적조성비가 2 : 3임을 확인하였다.

Keywords

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