• 전자공학회논문지D
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• 제36D권6호
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• pp.44-51
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• 1999

High density DRAM의 cell capacitor로 촉망 받고 있는 고유전체 BST박막 커패시터의 저 전계(<0.2MV/cm) 영역에서의 전기전도 현상을 분석하였다. 저 전계 영역에서 Pt/BST/Pt구조의 MIM 커패시터에 일정 전계를 인가한 후 전류를 측정하는 I(t)방법을 이용하여 유전완화전류와 누설전류를 분리해내어 박막의 측정온도 변화, 전계의 크기, 인가방향 변화, 후속 열처리에 따른 BST 박막의 전기전도 기구를 분석하였다. 그 결과, 유전완화전류는 Hoppiong process에 의한 BST박막내부의 trap된 전자들의 이동에 의한 전하재배치로 설명되어지며, 누설전류도 박막내의 trap에 의한 poole-Frenkel process에 의한 것임을 알 수 있었다. 그리고 각 전류성분에 기억하고 있는 trap이 BST박막내의 산호 결핍임을 추정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• 동력기계공학회지
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• 제3권4호
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• pp.57-62
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• 1999

The microaccelerometer using a tunnelling current effect concept has the potential of high performance, although it requires slightly complex signal-processing circuit for servo-system. The paddle of micro accelerometer is pulled to have the gap width of about 2nm which almost allows the flow tunnelling current. This paper demonstrates at capacitor of microaccelerometer the use of the coupled thermo-electric analysis for voltage, current, heat flux and Joule heating then tunnelling current flows. Two electrodes are applied to the microaccelerometer producing a unform difference of temperature gradient and electric potential between the paddle and the substrate.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.317-322
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• 2010

This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.

• 전기화학회지
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• 제5권4호
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• pp.192-196
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• 2002

Ionic liquids based on l-ethyl-3-methylimidazolium cation $(EMI^+)$ and inorganic or organic anions containing fluorine atoms were applied to electrolyte materials for double-layer capacitors. The double-layer capacitors composed of a pair of activated carbon electrodes and an ionic liquid selected from $EMIBF_4,\; EMINbF_6,\;EMITaF_6,\;EMICF_3SO_3,\;EMI(CF_3SO_2)_2N,\;and\;EMI(C_2F_5SO_2)_2N$ showed inferior low-temperature characteristics to those of a conventional nonaqueous electrolyte based on propylene carbonate (PC) solvent. On the other hand, the capacitor using $EMIF{\cdot}2.3HF$ showed excellent low-temperature characteristics due to its high conductivity at low temperatures, however, it had a lower working voltage $(\~2V)$ than the conventional nonaqueous counterpart $(\~3V)$.

• 전자공학회논문지
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• 제50권5호
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• pp.61-66
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• 2013

본 논문에서는 절연물체로 $Si_3N_4$를 사용한 MIM 커패시터의 정합특성의 온도에 대한 의존성에 대해 분석하였다. 온도가 올라감에 따라 정합특성이 열화 되는 현상이 나타났다. 즉, $25^{\circ}C$, $75^{\circ}C$ 그리고 $125^{\circ}C$에서 $Si_3N_4$ MIM 커패시터의 정합특성 계수는 각각 0.5870, 0.6151, $0.7861%{\mu}m$으로 측정 되었다. 이러한 현상은 온도가 증가함에 따라 커패시터 내부의 캐리어들의 이동도가 감소하고 전하의 농도가 많아지기 때문이라고 할 수 있다. 따라서 고온에서의 $Si_3N_4$ MIM 커패시터의 정합특성의 분석은 아날로그 집적회로나 SoC (System on Chip)에 아주 중요하고 필수적인 연구라고 할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).