• Title/Summary/Keyword: High reliability circuit

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Analysis of the LIGBT-based ESD Protection Circuit with Latch-up Immunity and High Robustness (래치-업 면역과 높은 감내 특성을 가지는 LIGBT 기반 ESD 보호회로에 대한 연구)

  • Kwak, Jae Chang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.11
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    • pp.686-689
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    • 2014
  • Electrostatic discharge has been considered as a major reliability problem in the semiconductor industry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PAD must be designed with a protection circuitry that creates a low impedance discharge path for ESD current. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuit with latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD (bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuit is measured. In the result, the proposed ESD protection circuit has latch-up immunity and high robustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristic can be applied to analog integrated circuits.

Circuit-Level Reliability Simulation and Its Applications (회로 레벨의 신뢰성 시뮬레이션 및 그 응용)

  • 천병식;최창훈;김경호
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.1
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    • pp.93-102
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    • 1994
  • This paper, presents SECRET(SEC REliability Tool), which predicts reliability problems related to the hot-carrier and electromigration effects on the submicron MOSFETs and interconnections. To simulate DC and AC lifetime for hot-carrier damaged devices, we have developed an accurate substrate current model with the geometric sensitivity, which has been verified over the wide ranges of transistor geometries. A guideline can be provided to design hot-carrier resistant circuits by the analysis of HOREL(HOT-carrier RFsistant Logic) effect, and circuit degradation with respect to physical parameter degradation such as the threshold voltage and the mobility can also be expected. In SECRET, DC and AC MTTF values of metal lines are calculated based on lossy transmission line analysis, and parasitic resistances, inductances and capacitances of metal lines are accurately considered when they operate in the condition of high speed. Also, circuit-level reliability simulation can be applied to the determination of metal line width and-that of optimal capacitor size in substrate bias generation circuit. Experimental results obtained from the several real circuits show that SECERT is very useful to estimate and analyze reliability problems.

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A Study on Implementation of LV circuit analysis simulator for Reliability Evaluation (신뢰성 평가를 위한 LV 회로 분석시뮬레이터 구현에 관한 연구)

  • 장영건;조경환;박계서;최권희
    • Proceedings of the KSR Conference
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    • 2000.11a
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    • pp.602-609
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    • 2000
  • This study is concerned with analysis and reliability evaluation of LV circuit in Cab Cubicle system which controls train to keep safety in High Speed Train. LV circuit is operated with diagnosis system as safety system. In this paper, we suggest a design and an implementation method to analyze LV circuit or trace fault area in LV circuit. This simulator uses 28 package modules and examines input and output by equations. So, user can trace where is fault area. The implemented system can be expected to be useful for long term test and evaluation of circuit in high speed train systems. We expect reduction to diagnosis area or repair time by this simulator.

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A study of guaranteeing reliability for IC of electronic instruments according temperature

  • Yoon, Geon;Park, Yong-Oon;Kwon, Soon-Chang
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.320-323
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    • 2005
  • This paper discusses heat problem of IC, which composes the electronic instruments, to guarantee reliability of electronic instruments. And also proposes the unified equivalent model for various electronic instrument products to guarantee reliability and life of its parts. Because electronic instruments are down sizing and operated with high frequency, the internal temperature of electronic instruments is rising steadily. The internal temperature of the electronic instruments gives a big effect to electronic instrument's reliability and life. The semiconductor parts are the representative heat generation parts because of its complicated function, high frequency and high density. Consequently, guaranteeing reliability and life of electronic semiconductor is the important start point in securing the reliability and life of the electronic instrument product. Unfortunately, there are many factors, which affect heat dissipation efficiency. The heat dissipation efficiency follows the environment where the electronic instrument products are used. Therefore it is very difficult to define reliability and life of the electronic manufactures. Electronic instrument products are composed of printed circuit board (PCB), integrated circuit (IC), resistance, and capacitor and so on. And there are superposed thermal resistances, because the parts are arrayed on the printed circuit board (PCB), Therefore the total thermal resistance is variable. Consequently it cannot have same thermal model for each electronic instrument products. In the next part, we propose the unified equivalent model for various electronic instruments. And using the proposed equivalent model proofs the method for analysis reliability of electronic parts.

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Design and fabrication of the Built-in Testing Circuit for Improving IC Reliability (IC 신뢰성 향상을 위한 내장형 고장검출 회로의 설계 및 제작)

  • Ryu, Jang-Woo;Kim, Hoo-Sung;Yoon, Jee-Young;Hwang, Sang-Joon;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.431-438
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    • 2005
  • In this paper, we propose the built-in current testing circuit for improving reliability As the integrated CMOS circuits in a chip are increased, the testability on design and fabrication should be considered to reduce the cost of testing and to guarantee the reliability In addition, the high degree of integration makes more failures which are different from conventional static failures and introduced by the short between transistor nodes and the bridging fault. The proposed built-in current testing method is useful for detecting not only these failures but also low current level failures and faster than conventional method. In normal mode, the detecting circuit is turned off to eliminate the degradation of CUT(Circuits Under Testing). The differential input stage in detecting circuit prevents the degradation of CUT in test mode. It is expected that this circuit improves the quality of semiconductor products, the reliability and the testability.

Copper thickness and thermal reliability of microvias produced by laser-assisted seeding (LAS) process in printed circuit board (PCB) manufacture

  • Leung, E. S.W.;Yung, W. K.C.
    • International Journal of Quality Innovation
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    • v.2 no.2
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    • pp.69-92
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    • 2001
  • The laser-assisted seeding (LAS) process has potential to replace conventional electroless copper plating in Printed Circuit Board (PCB) manufacturing since it combines the steps of laser drilling and plating into one single process. In the LAS process, the single extra LAS step can metallize a microvia. Thus, the process steps can be greatly reduced and the productivity enhanced, but also the high aspect ratio microvias can be metallized. The objectives of this paper are to study the LAS copper thickness within PCB microvias and the thermal reliability of the microvias produced by this process. It was found that results were satisfactory in both the reliability test and also the LAS copper thickness which both comply with IPC standard, the copper thickness produced by the LAS process is sufficient for subsequent electro-plating process. The reliability of the microvias produced by LAS process is acceptable which are free from any voids, corner cracks, and distortion in the plated copper.

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Evaluation Method I of the Small Current Breaking Performance for SF(sub)6-Blown High-Voltage Gas Circuit Breakers (초고압 $SF_6$ 가스차단기의 소전류 차단성능 해석기술 I)

  • 송기동;이병운;박경엽;박정후
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.7
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    • pp.331-337
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    • 2001
  • With the increasing reliability of analysis schemes and the dramatically increased calculating speed, the computer simulation has become and indispensable process to predict the interruption capacity of circuit breakers. Generally, circuit breakers have to possess both the small current and large current interruption abilities and the circuit breaker designers need to evaluate its capacities to save the time and the expense. The analysis of small current and the large current interruption performances have been considered separately because the phenomena occurring in a interrupter are quite different. To analyze the dielectric recovery after large current interruption many physical phenomena such as heat transfer, convection and arc radiation, the nozzle ablation, the ionization of high temperature SF(sub)6 gas, the electric and themagnetic forces and so forth mush be considered. However, in the analysis of small current interruption performance only the cold gas flow analysis needs to be carried out because the capacitive current is to small that the influence from the current can be neglected. In this paper, an empirical equation which is obtained from a series of tests to estimate the dielectric recovery strength has been applied to a real circuit breaker. The results of analysis have been compared with the test results and the reliability has been investigated.

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Design and Research on High-Reliability HPEBB Used in Cascaded DSTATCOM

  • Yang, Kun;Wang, Yue;Chen, Guozhu
    • Journal of Power Electronics
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    • v.15 no.3
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    • pp.830-840
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    • 2015
  • The H-bridge inverter is the fundamental power cell of the cascaded distribution static synchronous compensator (DSTATCOM). Thus, cell reliability is important to the compensation performance and stability of the overall system. The concept of the power electronics building block (PEBB) is an ideal solution for the power cell design. In this paper, an H-bridge inverter-based “plug and play” HPEBB is introduced into the main circuit and the controller to improve the compensation performance and reliability of the device. The section that discusses the main circuit primarily emphasizes the design of electrical parameters, physical structure, and thermal dissipation. The section that presents the controller part focuses on the principle of complex programmable logic device -based universal controller This section also analyzes typical reliability and anti-interference issues. The function and reliability of HPEBB are verified by experiments that are conducted on an HPEBB test-bed and on a 10 kV/± 10 Mvar DSTATCOM industrial prototype.

A study on the auto-charging circuit of the battery power units using trigger characteristics of semiconductor device (반도체 스위칭 소자의 트리거 특성을 이용한 배터리 자동 충전회로에 관한 연구)

  • 김영민;황종선;박성진;임종연;송승호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.519-522
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    • 2001
  • Recently, the battery charging technology and reducing technology of harmonics on AC input line are rising importantly according to increasing electrical facilities that it has been replaced battery with emergency power. In this study, I proposed that an auto-charging circuit of battery has low cost with simple-construction circuit, relative, harmonics reduction with diode tap-change method, high reliability of system for using characteristics of thyristor switching. In case of this circuit, convenience and reliability of maintenance of battery power units were more improved. 1 think that it is resulted in effect of prevention to shortening of battery life from over-charging and over-discharging and decrease of harmonics obstacle on AC input line.

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A Novel Circuit for Characteristics Measurement of SiC Transistors

  • Cao, Guoen;Kim, Hee-Jun
    • Journal of Electrical Engineering and Technology
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    • v.9 no.4
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    • pp.1332-1342
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    • 2014
  • This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A soft-switching circuit based on synchronous buck topology is developed in this paper. To provide high-voltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.