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http://dx.doi.org/10.4313/JKEM.2014.27.11.686

Analysis of the LIGBT-based ESD Protection Circuit with Latch-up Immunity and High Robustness  

Kwak, Jae Chang (Department of Computer Science, SeoKyeong University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.11, 2014 , pp. 686-689 More about this Journal
Abstract
Electrostatic discharge has been considered as a major reliability problem in the semiconductor industry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PAD must be designed with a protection circuitry that creates a low impedance discharge path for ESD current. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuit with latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD (bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuit is measured. In the result, the proposed ESD protection circuit has latch-up immunity and high robustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristic can be applied to analog integrated circuits.
Keywords
ESD; LIGBT; Trigger voltage; Holding voltage; Latch-up;
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