• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.35-38
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• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• Journal of Surface Science and Engineering
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• v.48 no.6
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.58-61
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• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.161-161
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• 1999

In the field of material science, the interests and efforts to modify the surface of materials in agreement with the need of usage have been extensively increasing. he modification to improve the wettability of surface is very important is terms of adhesion, printing, etc. It is very difficult to modify metal surface into hydrophilic one. therefore, surfactant coating has been generally used in many cases. However, surfactant has disadvantages such as environmental problem, soluble in water. in this study, hydrophilic polymer films as alternative of surfactant were deposited on metal substrate by DC plasma polymerization. Hydrophilic polymer films deposited by DC plasma show many merits such as good wettability, stone adhesion to substrate, high resistance to most chemicals. Monomer gas and reactive gas were used as source plasma polymerization. Plasma polymerized films were fabricated with process parameters of deposition time, ratio of gas mixture, current, pressure, etc. Effects of these variables on wettability of plasma polymer films will be discussed. With XPS and FT-IR analyses of plasma polymeric films, the relation between wettability and chemical state of polymer films by DC plasma was investigated.

• Journal of Surface Science and Engineering
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• v.40 no.6
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• pp.245-249
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• 2007

Amorphous IZO films were deposited on PET substrate by DC magnetron sputtering without substrate heating. In order to investigate effect of reactive gas addition on film properties, 0.2-0.4% of $H_2$ or $O_2$ gas was introduced during the deposition. Deposited IZO films were evaluated with mechanical property, electrical property, and water permeability. In the case of $H_2$ gas addition, mechanical property showed clear degradation compared to $O_2$ gas. In the case of $O_2$ gas, water permeability of the IZO film was increased compared to $H_2$ gas which could be attributed to the low adhesion of the film caused by bombardment of high energy negative oxygen ion. As a result, it is confirmed that water permeability of the film could be strongly affected by adhesion of the film.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).