• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.195-196
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• 2008

Doping depth, doping concentration, and resistivity of crystalline silicon solar cell are variables which take important portion in cell's efficiency. To get highly efficient solar cell, PC1D is used to calculate $I_{sc}$, $V_{oc}$, and $P_{max}$. Depth factor, peak doping, and base resistivity was used as variables. As a result, the optimized value of emitter peak doping is $1\times10^{19}cm^{-3}$, depth factor is $1{\mu}m$, and base $\rho$ is $ 0.1\Omega$-cm. Under the optimized condition, the solar cell gets efficiency 19.03(%).

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.5
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• pp.416-422
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• 2015

Lithium Ion capacitor (LIC) is a new storage device which combines high power density and high energy density compared to conventional supercapacitors. LIC is capable of storing approximately 5.10 times more energy than conventional EDLCs and also have the benefits of high power and long cycle-life. In this study, LICs are assembled with activated carbon (AC) cathode and pre-doped graphite anode. Cathode material of natural graphite and artificial graphite kinds of MAGE-E3 was selected as the experiment proceeds. Super-P as a conductive agent and PTFE was used as binder, with the graphite: conductive agent: binder of 85: 10: 5 ratio of the negative electrode was prepared. Lithium doping condition of current density of $2mA/cm^2$ to $1mA/cm^2$, and was conducted by varying the doping. Results Analysis of Inductively Coupled Plasma Spectrometer (ICP) was used and a $1mA/cm^2$ current density, $2mA/cm^2$, when more than 1.5% of lithium ions was confirmed that contained. In addition, lithium ion doping to 0.005 V at 10, 20 and $30^{\circ}C$ temperature varying the voltage variation was confirmed, $20^{\circ}C$ cell from the low internal resistance of $4.9{\Omega}$ was confirmed.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.475-476
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• 2006

Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.136-137
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• 2008

Solar cell's efficiency depends on silicon's characteristic itself, or additional process such as texturing, coating, etc. Using PC1D, by adjusting Texturing, Base Resistivity, Emitter Doping, simulate many situation and observe the result. When texture Angle=$80^{\circ}$, Texture Depth=2um, Base Resistivity = 0.2, Emitter Doping = 8*Exp(19) are set, the solar cell's efficiency si 19.89%, and optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.19-23
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• 2018

In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x＝0.1 and y＝10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.59.1-59.1
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• 2011

BSF 후면전계효과는 태양전지의 개방전압 증가를 결정하며 효율에 매우 중요한 요인이다. 본 연구에서는 p-type에서의 후면전계효과를 확인하기 위해 PC1D 시뮬레이션(Simulation)을 통해 p+ 영역의 표면농도와 깊이에 따른 전기적 특성을 분석 하였다. 최적효율을 찾기위해 면저항을 $30{\Omega}/{\square}$으로 고정하고 깊이와 표면 농도값을 가변하였다. 최적화 결과 표면농도값이 작아지고 깊이가 커질수록 효율이 좋아지는 경향이 나타났으며 Peak doping=$5{\times}10^{18}cm^{-3}$, Juction depth=12.52um에서 최고효율 19.14%를 얻을 수 있었다. 본 시뮬레이션을 바탕으로 실제 태양전지 제작 과정에 적용 가능하다. p-type 태양전지 제작에서 후면의 p+ 영역의 깊이를 증가시키고, 표면 농도를 낮추는 공정을 통해 효율향상을 기대 할 수 있다.