Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Analysis of Current Characteristics Determined by Doping Profiles in 3-Dimensional Devices

3차원 구조 소자에서의 doping profile에 따른 전류 특성 분석

  • Cho, Seong-Jae (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Yun, Jang-Gn (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Il-Han (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Jung-Hoon (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Doo-Hyun (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Gil-Seong (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Jong-Duk (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University)
  • 조성재 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 윤장근 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 박일한 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 이정훈 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 김두현 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 이길성 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 이종덕 (서울대학교 공과대학 전기.컴퓨터공학부) ;
  • 박병국 (서울대학교 공과대학 전기.컴퓨터공학부)
  • Published : 2006.06.21
Download PDF
⟨ Previous Next ⟩

Abstract

Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

Keywords