• 터널과지하공간
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• 제9권2호
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• pp.102-113
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• 1999

결정질 암반에 설치되는 처분공과 처분터널의 구조적 안정성을 평가하기 위해 UDEC과 3DEC을 이용하여 2차원해석과 3차원 해석의 결과를 비교 분석함으로써 불연속면의 존재, 처분공 사이의 간격 등이 처분터널과 처분공의 안정성에 미치는 영향을 파악하고자 하였다. 2차원 및 3차원 불연속 해석모델에서 최대주응력 및 파괴발생 가능성이 큰 지점은 터널과 불연속면 사이의 암반이다. 또한 처분공을 포함하는 해석단면에 대한 2차원 및 3차원 해석결과, 합리적인 결과를 얻기 위해서는 3차원 해석이 필요함을 제시할 수 있었다. 그리고 처분공 간격이 8m에서 3m로 감소하더라도 처분터널의 역학적인 안정성에는 큰 변화가 발생하지 않는 것으로 나타났다

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.235-240
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• 2017

The effect of particle sizes on the aerosol deposition (AD) of Cu films is investigated in order to understand the deposition behaviors of metal powder during the AD process. The Cu coatings fabricated by using $2{\mu}m$ Cu powders had a dense microstructure, a high deposition rate ($1.6{\pm}0.2{\mu}m/min$), and low resistance ($9.42{\pm}0.4{\mu}{\Omega}{\cdot}cm$) compared to that from using Cu powder with a particle size greater than $5{\mu}m$. Also, from estimating the internal micro-strain of Cu films, the Cu coatings fabricated by using $2{\mu}m$ Cu particles exhibited a high micro-strain value of $3.307{\times}10^{-3}$. On the other hand, the strain of Cu coatings fabricated with $5{\mu}m$ particles was decreased to $2.76{\times}10^{-3}$. These results seem to show that the impacted Cu particles are compressed and flattened by shock waves, and that their bonding is associated with the high internal micro-strain caused by plastic deformation.

• 신재생에너지
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• 제18권1호
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• 한국초전도ㆍ저온공학회논문지
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• 제14권4호
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• pp.5-11
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• 2012

In this review article, we focus on various co-evaporation technologies developed for the fabrication of high performance $REBa_2Cu_3O_{7-{\delta}}$ (RE: Y and Rare earth elements, REBCO) superconducting films. Compared with other manufacturing technologies for REBCO films such as sputtering, pulsed laser deposition (PLD), metal-organic deposition (MOD), and metal organic chemical vapor deposition (MOCVD), the co-evaporation method has a strong advantage of higher deposition rate because metal sources can be used as precursor materials. After the first attempt to produce REBCO films by the co-evaporation method in 1987, various co-evaporation technologies for high performance REBCO films have been developed during last several decades. The key points of each co-evaporation technology are reviewed in this article, which enables us to have a good insight into a new high throughput process, called as a Reactive Co-Evaporation by Deposition and Reaction (RCE-DR).

• 한국표면공학회지
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• 제45권2호
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• pp.75-80
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• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• 한국대기환경학회지
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• 제21권1호
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• pp.39-48
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• 2005

Nitrogen and sulfur deposition was measured on Lake Pal dang from March 2002 to October 2003. Wet and dry depositions were separately measured using wet- and dry-only samplers, respectively. In order to measure the dry deposition to the water body, a dry deposition sampler composed of three pans filled with pure water, called the deposition water, was used. Since ammonium was generally in excess in ambient air, more than half of ammonium was present in the gaseous form. Ammonium concentration was also generally higher than the sum of major anion concentrations in the deposition water because gaseous species were much easily deposited than the species in fine particles. Nevertheless, the contribution of gaseous ammonia to the deposition of ammonium was not high as well as that of particulate ammonium while the contribution of gaseous nitric acid was much higher than that of particulate nitrate. Annual wet deposition fluxes of nitrogen and sulfur were five and six times higher than their dry deposition fluxes, respectively. Except for ammonium, the dry deposition flux estimated in the present work was a half of the previous results. This was mainly caused by much smaller dry deposition velocities over the water than over the ground.