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http://dx.doi.org/10.5695/JKISE.2012.45.2.075

High Rate Deposition System by Inductively Coupled Plasma Assisted Sputter-sublimation  

Choi, Ji-Sung (Department of Materials Science and Engineering, Plasma Materials Research Center Kunsan National University)
Joo, Jung-Hoon (Department of Materials Science and Engineering, Plasma Materials Research Center Kunsan National University)
Publication Information
Journal of the Korean institute of surface engineering / v.45, no.2, 2012 , pp. 75-80 More about this Journal
Abstract
A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.
Keywords
High rate sputtering; Sublimation; Inductively coupled plasma;
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