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Deposition Of $TiB_2$ Films by High Density Plasma Assisted Chemical Vapor Deposition  

Lee S. H. (Plasma Surface Engineering Lab., School of Materials Science and Engineering, Seoul National University)
Nam K. H. (Plasma Surface Engineering Lab., School of Materials Science and Engineering, Seoul National University)
Hong S. C. (LG Production Engineering Research Center, LG Electronics)
Lee J. J. (Plasma Surface Engineering Lab., School of Materials Science and Engineering, Seoul National University)
Publication Information
Journal of the Korean institute of surface engineering / v.38, no.2, 2005 , pp. 60-64 More about this Journal
Abstract
The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.
Keywords
Titanium diboride; ICP; CVD;
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