• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.396-400
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• 2006

We present a weather-insensitive optical free-space communication method supporting optical packet channels. It operates optical fiber amplifiers in gain-saturation regions. When the propagation loss gets too high, it decreases the average packet rate, or the average packet length, or both, to increase the optical power level launched into the free-space. As a demonstration, we transmit $8{\times}10$ Gigabit Ethernet channels over a terrestrial distance of 2.4 km. One gain-saturated free-space optical repeater is used at the halfway point.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.12
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• pp.1707-1714
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• 2016

This paper presents the effect of spectrum sharing/overlapping in a heterogeneous OFDM system with nonlinear High Power Amplifier (HPA). According to the spectrum sharing strategies, the achievable rate performances are analyzed. In the non-orthogonal spectrum sharing, we address how the portion of the overlapped or overlaid spectrum band and the nonlinear properties of HPA affect the system performance and accordingly, propose the optimized spectrum sharing strategies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.433-437
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• 2015

We have designed and fabricated a low power and high linearity up down convertor for wireless repeaters using $0.35{\mu}m$ SiGe Bipolar CMOS technology. Repeater is composed of a wideband up/down converting mixer, programmable gain amplifiers (PGA), input buffer, LO buffer, filter driver amplifier and integer-N phase locked loop (PLL). As of the measurement results, OIP3 of the down conversion mixer and up conversion mixer are 32 dBm and 17.8 dBm, respectively. The total dynamic gain range is 31 dB with 1 dB gain step resolution. The adjacent channel leakage ratio (ACLR) is 59.9 dBc. The total power consumption is 240 mA at 3.3 V.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.1047-1051
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• 2004

Charge amplifier systems benefit from the very wide dynamic range of PE accelerometers by offering flexibility in adjusting the electrical output characteristics such as sensitivity and range. They are well suited for operation at high temperatures. Modern charge systems feature improved low noise operation, simplified digital controls, and dual mode operation for operation with charge or IEPE voltage mode sensors. high impedance circuitry is not well suited for operation in adverse field or factory environments. The resolution of a PE accelerometer may not be specified or known since noise is a system consideration determined by cable length and amplifier gain. IEPE accelerometrs operate from a constant current power source, provide a high-voltage, low-impedance, fixed mV/g output. They operate through long, ordinary, coaxial cable in adverse environments without degradation of signal quality. They have limited high temperature range. IEPE sensors are simple to operate. Both resolution and operating range are defined specifications. Cost perchannel is lower compared to PE systems since low-noise cable and charge amplifiers are not required.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2C
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• pp.191-199
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• 2006

In this paper, we propose a method to implement a predistorter of the $rho$-th order inverse filter structure to prevent signal distortion and spectral re-growth due to the high PAPR (peak-to-average ratio) of the OFDM signals and the non-linearity of high-power amplifiers. We model the memory-less non-linearity of the high-power amplifier with a polynomial model and utilize the inverse of the model, the $rho$-th order inverse filter, for the predistorter. Once the non-linearity is modeled with a polynomial, since we can determine the $rho$-th order inverse filter only with the coefficients of the polynomial, large memory is not required. To update the coefficients of the non-linear high-power amplifier model, we can use LMS or RLS algorithms. The convergence speed is high since the number of coefficients is small, and the computation is simple since manipulation of complex numbers is not necessary.

• Journal of Advanced Navigation Technology
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• v.21 no.1
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• pp.66-71
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• 2017

This paper describes implementation of a 165 MHz, 5 kW RF high power amplifier (HPA) for particle accelerator applications. The HPA consists of a drive amplifier for main amplifiers driving, sixteen 600 W class-AB push-pull power amplifier pallets and Wilkinson power divider/combiner using lumped LC components, which are divided/combined power amplifier pallet outputs. To detected the amplifier circuit of normal and reflected output power conditions, we used a bidirectional coupler. To radiate heat of main power amplifier, we were used an water-cooled copper plates to go through a water for radiation of heat. The HPA of center frequency 165 MHz has archived an efficiency of 62.5 % at 5 kW of power level experimentally.

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.3
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• pp.18-27
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• 1994

An 8-bit 2-stage pipelined current mode A/D converter is designed with a new architecture, where the wideband track-and-hold amplifiers which have 2 integrators in parallel sample input signal twice per clock cycle. The conversion speed of the A-D converter is two times faster than that of conventional pipelined method. The converter is designed to be operated at the power supply voltage of 3.3V with the input dynamic range of 0-256$\mu$A. HSPICE simulation results show the performance of up to 55Msamples/s and power consumption of 150mW with the parameters of ISRC $1.5\mu$m BICMOS process. The chip area is 3${\times}4mm^{2}$.

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.3
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• pp.343-352
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• 1998

Higher frequency of energy transfer or at least energy conversion has to be used in order to reduce the size of inductors and capacitors required in the power supplies. Conventional PWM switching-mode power supplies have a limitation of operating frequency due to switching losses in the switching transistors and rectifier diodes. Means of reducing switching losses have been developed for high-frequency resonant amplifiers or more exactly dc/ac inverters. Because of smooth current and voltage waveforms resonant convertesrs havelower device switching losses and stresses lower electromagnetic interference(EMI) and lower noise than PWM converters. Therefore in this paper design equations of Classs E resonant low dv/dt rectifier with a series resonant capacitor drived using Fourier series techniques. The theory is compared with simulation results obtained for the rectifier operating at 10[MHz] ac input and 5[V] coutput.