• Title/Summary/Keyword: Heterostructure

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Band Lineup Types Based on Ge1-xSnx/Ge1-ySny(001) (Ge1-xSnx/Ge1-ySny(001)의 band lineup 유형)

  • 박일수;전상국
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.770-775
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    • 2002
  • We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.

Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers (HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발)

  • Lee, Tae-Sung;Lee, Byoung-Wook;Hong, Chin-Soo;Kim, Chang-Kyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.853-858
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    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

Ab-Initio Study of the Schottky Barrier in Two-Dimensional Lateral Heterostructures by Using Strain Engineering (인장변형에 따른 이차원 수평접합 쇼트키 장벽 제일원리 연구)

  • Hwang, Hwihyeon;Lee, Jaekwang
    • New Physics: Sae Mulli
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    • v.68 no.12
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    • pp.1288-1292
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    • 2018
  • Using density functional theory calculations, we study the Schottky barrier (SB) change in a two-dimensional (2D) lateral heterostructure consisting of semiconducting $2H-MoS_2$ and the ferromagnetic metal $2H-VS_2$ by applying a uniaxial tensile strain from 0% to 10%. We find that the SB for holes is much smaller than that for electrons and that SB height decreases monotonically under increasing tensile strain. In particular, we find that a critical strain where the spin-up SB for holes is abruptly reduced to zero exists near a strain of 8%, implying that only the spin-up holes are allowed to flow through the $MoS_2-VS_2$ lateral heterostructure. Our results provide fundamental information and can be utilized to guide the design of 2D lateral heterostructure-based novel rectifying devices by using strain engineering.

Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate (HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성)

  • Hong, S.H.;Jeon, H.S.;Han, Y.H.;Kim, E.J.;Lee, A.R.;Kim, K.H.;Hwang, S.L.;Ha, H.;Ahn, H.S.;Yang, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.1
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    • pp.6-10
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    • 2009
  • In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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Fabrication and Photoelectrochemical Properties of a Cu2O/CuO Heterojunction Photoelectrode for Hydrogen Production from Solar Water Splitting (태양광 물 분해를 통한 수소 생산용 Cu2O/CuO 이종접합 광전극의 제작 및 광전기화학적 특성)

  • Kim, Soyoung;Kim, Hyojin;Hong, Soon-Ku;Kim, Dojin
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.604-610
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    • 2016
  • We report on the fabrication and characterization of a novel $Cu_2O/CuO$ heterojunction structure with CuO nanorods embedded in $Cu_2O$ thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a $Cu_2O$ thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/CuO$ heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/CuO$ photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. $-1.05mA/cm^2$ at -0.6 V vs. $Hg/HgCl_2$ in $1mM\;Na_2SO_4$ electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the $Cu_2O/CuO$ photocathode was estimated to be 1.27% at -0.6 V vs. $Hg/HgCl_2$. Moreover, the PEC current density versus time (J-T) profile measured at -0.5 V vs. $Hg/HgCl_2$ on the $Cu_2O/CuO$ photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple $Cu_2O$ thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

Oxygen Vacancy Effects of Two-Dimensional Electron Gas in SrTiO3/KNbO3 Hetero Structure

  • Choi, Woo-Sung;Kang, Min-Gyu;Do, Young-Ho;Jung, Woo-Suk;Ju, Byeong-Kwon;Yoon, Seok-Jin;Yoo, Kwang-Soo;Kang, Chong-Yun
    • Journal of Sensor Science and Technology
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    • v.22 no.4
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    • pp.244-248
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    • 2013
  • The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.