• 진공이야기
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• 제2권2호
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• pp.4-11
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• 2015

본 글에서는 광전자 분광 및 역광전자 분광을 이용한 유기분자 시스템의 전자구조 연구에 대하여 기술하였다. 다양한 유기물간의 계면 연구가 급속도로 늘어나고 있으며, 폴리머, 거대 분자 등 기존의 in situ 분석 방법으로 실험이 어려운 물질까지도 연구의 필요성이 늘어나고 있다. Electrospray 증착 방법이 이러한 새로운 물질들의 계면 전자구조 연구를 가능하게 할 수 있음을 살펴보았으며, 다양한 새로운 분석 기법들의 출현을 기대해 본다. 몇 가지 예에서 살펴본 바와 같이 전자구조는 소자 구동 특성을 직접적으로 지배하는 핵심적인 물리량이며, 전자구조의 이해를 통해 전자소자의 구동 원리, 성능 최적화 및 소자 특성 열화의 원인을 파악할 수 있다. 현재, 유기물 소자 관련 기술의 성숙도는 전자구조 분석과 같은 기초 연구 결과 없이는 더 이상 발전할 수 없는 정도에 이르러, 관련 분석 기술에 대한 수요가 더욱 늘어날 것으로 전망된다.

• 한국세라믹학회지
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• 제56권3호
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• pp.284-290
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• 2019

Ternary MoS₂/graphene (G)-TiO₂ photocatalysts were prepared by a simple hydrothermal method. The morphology, phase structure, band gap, and catalytic properties of the prepared samples were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-vis spectrophotometry, and Brunauer-Emmett-Teller surface area measurement. The H₂ production efficiency of the prepared catalysts was tested in methanol-water mixture under visible light. MoS₂/G-TiO₂ exhibited the highest activity for photocatalytic H₂ production. For 5 wt.% and 1 wt.% MoS₂ and graphene (5MT-1G), the production rate of H₂ was as high as 1989 µmol^-1h^-1. The catalyst 5MT-1G showed H₂ production activity that was ~ 11.3, 5.6, and 4.1 times higher than those of pure TiO₂, 1GT, and 5MT, respectively. The unique structure and morphology of the MoS₂/G-TiO₂ photocatalyst contributed to its improved hydrogen production efficiency under visible light.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.805-808
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• 2010

본 연구에서는 CdTe 및 $CuInSe_2$ 태양전지의 광투과층으로 사용되는 CdS 박막을 chemical bath deposition으로 제조하고, 반응용액의 온도에 따른 미세구조의 변화를 조사하였다. CdS 박막의 결정구조와 미세구조는 기판의 종류에 큰 변화 없이 $85^{\circ}C$ 까지는 반응용액의 온도가 증가함에 따라 기판에서의 ion-by-ion 성장이 촉진되어 CdS 박막의 성장률이 증가하며, 결정성이 향상되고 continuous하면서 매우 조밀한 미세구조를 가졌다. 그러나 온도가 $55^{\circ}C$ 이하의 경우 CdS 형성에 필요한 Cd2+ 이온의 공급이 느려져 온도에 따라 증착률이 감소하였다. 또한 핵생성 위치 수가 감소하여 입자의 크기가 증가하였고, 박막 내부에는 void가 형성되어 균일하지 못한 미세구조를 나타내었다.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.93-93
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• 2010

Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.

• 한국재료학회지
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• 제21권12호
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• pp.666-672
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• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.14-23
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• 2018

$TiO_2-coated$ cubic ${\alpha}-Fe_2O_3$ with mostly exposed (012) and (101) facets (${\alpha}-Fe_2O_3@TiO_2$) was fabricated using a hydrothermal route for the photo-Fenton degradation of tetracycline under visible light irradiation. $TiO_2$ coating could greatly affect the photocatalytic activity of ${\alpha}-Fe_2O_3@TiO_2$. Compared with cubic ${\alpha}-Fe_2O_3$ alone for photodegradation of tetracycline, ${\alpha}-Fe_2O_3@TiO_2$ with $TiO_2$ shell of around 15 nm exhibited higher removal efficiency of tetracycline in photo-Fenton system, and its durability was slightly affected after five cycle times under same conditions. It is ascribed to the well-matched interface between cubic ${\alpha}-Fe_2O_3$ core and $TiO_2$ shell, leading to the broadened light-absorption and the efficient separation of photo-generated electon-hole pairs. The $^{\bullet}OH$ radicals were main responsible for the advanced photocatalytic performance of ${\alpha}-Fe_2O_3@TiO_2$ in visible-light driven degradation of tetracycline.

• 태양에너지
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• 제11권1호
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• pp.41-49
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• 1991

본 연구에서는 기판의 증착온도를 $200{\pm}5[5^{\circ}C]$로 유지하여 진공증착법으로 (P)SiC/(N)Si 태양전지를 제작하고 그의 특성을 조사하였다. SiC 박막의 최적 두께 $1.2[{\mu}m]$는 박막두께와 변환효율과의 관계로부터 정해졌고 태양전지의 특성은 열치리에 의하여 개선되었다. 최적조건의 열처리 온도와 시간은 $420[^{\circ}C]$에서 12분이고 분광응답의 피크값은 열처리 온도의 증가와 더블어 장파장 쪽으로 이동함을 알았다. X선 회절분석 및 SEM검사는 열처리 온도와 시간에 따라 SiC 박막내에서 결정성장을 보여주며 $2.5{\times}1[cm^2]$의 태양전지에서 최고 변환효율은 11.7[%]이다.