• Title/Summary/Keyword: Hard X-ray

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Cutting Performance of Ti-Al-Si-N Coated Endmill for High-Hardened materials by Hybrid Coating System (하이브리드 코팅에 의한 고경도 소재용 Ti-Al-Si-N코팅 엔드밀의 절삭성능평가)

  • 김경중;강명창;이득우;김정석;김광호
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2003.10a
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    • pp.89-94
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    • 2003
  • Hard coatings are known to improve the performance of cutting tools in aggressive machining applications, such as high speed machining. New superhard Ti-Al-Si-W films, characterized by a nanocomposite nano-sized (Ti,Al,Si)N crystallites embedded in amorphous $Si_3 N_4$ matrix, could be successfully synthesized on WC-Co substrates by a hybrid coating system of arc ion plating(AIP) and sputtering method. The hardness of Ti-Al-Si-N film increased with incorporation of Si, and had the maximum value ~50 GPa at the Si content of 9 at.%, respectively. And the X-ray diffraction patterns of Ti-Al-Si-N films with various Si content is investigated. In this study, Ti-Al-Si-N coatings were applied to end-mill tools made of WC-Co material by a hybrid coating system. Cutting tests fir the high-hardened material (STD11,$H_R$)C62 and their performances in high speed cutting conditions were studied. Also, the tool wear and tool lift of Ti-Al-Si-N with various si(6, 9, 19) contents were measured.

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Electrochemical synthesis of nanosized hydroxyapatite/graphene composite powder

  • Vesna, Miskovic-Stankovic;Sanja, Erakovic;Ana, Jankovic;Maja, Vukasinovic-Sekulic;Miodrag, Mitric;Jung, Young Chan;Park, Soo Jin;Rhee, Kyong Yop
    • Carbon letters
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    • v.16 no.4
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    • pp.233-240
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    • 2015
  • Electrochemical synthesis was employed to prepare a novel hydroxyapatite/graphene (HAP/Gr) composite powder suitable for medical applications as a hard tissue implant (scaffold). The synthesis was performed in a homogeneous dispersion containing Na2H2EDTA·2H2O, NaH2PO4 and CaCl2 with a Ca/EDTA/PO43− concentration ratio of 0.25/0.25/0.15M, along with 0.01 wt% added graphene nanosheets, at a current density of 137 mA cm−2 and pH value of 9.0. The field emission scanning electron microscopy and transmission electron microscopy observations of the composite HAP/Gr powder indicated that nanosized hydroxyapatite particles were uniformly placed in the graphene overlay. Raman spectroscopy, Fourier transform infrared spectroscopy and X-ray diffraction confirmed graphene incorporation in the HAP/Gr powder. The electrochemically prepared HAP/Gr composite powder exhibited slight antibacterial effect against the growth of the bacterial strain Staphylococcus aureus.

Synthesis and Photoluminescence Properties of ZrO2:Eu3+ Nanoparticles Using Salt-Assisted Ultrasonic Pyrolysis Process (염 보조 초음파 분무 열분해법을 이용한 ZrO2:Eu3+ 나노입자의 합성 및 발광 특성)

  • Hwangbo, Young;Lim, Hyo Ryoung;Lee, Young-In
    • Korean Journal of Materials Research
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    • v.27 no.5
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    • pp.270-275
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    • 2017
  • Inorganic phosphors based on $ZrO_2:Eu^{3+}$ nanoparticles were synthesized by a salt-assisted ultrasonic spray pyrolysis process that is suitable for industrially-scalable production because of its continuous nature and because it does not require expensive precursors, long reaction time, physical templates or surfactant. This facile process results in the formation of tiny, highly crystalline spherical nanoparticles without hard agglomeration. The powder X-ray diffraction patterns of the $ZrO_2:Eu^{3+}$ (1-20 mol%) confirmed the body centered tetragonal phase. The average particle size, estimated from the Scherrer equation and from TEM images, was found to be approximately 11 nm. Photoluminescence (PL) emission was recorded under 266 nm excitation and shows an intense emission peak at 607 nm, along with other emission peaks at 580, 592 and 632 nm which are indicated in red.

Frequency effect of TEOS oxide layer in dual-frequency capacitively coupled CH2F2/C4F8/O2/Ar plasma

  • Lee, J.H.;Kwon, B.S.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.284-284
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    • 2011
  • Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

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Effect of Ti Interlayer Thickness on Epitaxial Growth of Cobalt Silicides (중간층 Ti 두께에 따른 CoSi2의 에피텍시 성장)

  • Choeng, Seong-Hwee;Song, Oh-Sung
    • Korean Journal of Materials Research
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    • v.13 no.2
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    • pp.88-93
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    • 2003
  • Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

Investigation on Structure and Physical Properties of Bioglasses with Various P2O5 Content (P2O5함량에 따른 Bioglass의 구조 분석 및 물성 측정)

  • 임기홍;황진명;김철영
    • Journal of the Korean Ceramic Society
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    • v.26 no.4
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    • pp.559-567
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    • 1989
  • Bioglasses have been known to be as one of the promising biomateials, which can be used for replacing defective hard and soft tissue. There have been many reports on biological results for this type of glass, but no systematic work has carried out on the structures and properties of the bioglass itself. In the present study, the effect of P2O5 in bioglasses on their structures and properties was examined. Infrared and Raman spectroscopy for the glass structural analysis, differential thermal and X-ray diffraction analysis for the crystallization of the bioglass were performed, and several physical properties were measured. When the glasses were heat-treated, Na2O.2CaO.3SiO2 was the major crystalline phase and $\beta$-NaCaPO4 crystal was found for the glass with high P2O5 content. The added P2O5 in the glasses enhanced the polymerization of silicate glass structure and it changed the chain-like glass structure to a sheet-like structure, and some P2O5 may stay as phosphate monomer. With addition of P2O5 in the glass the density of the glasses decreased, but not much changes in their thermal expansion coefficient, softening point and microhardness were observed.

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Processing and Characterization of Piezoelecteric Geramics Depending on Ball Milling Time (입자분쇄 시간변화에 따른 압전세라믹스 제작공정과 특성 분석)

  • Park, Jung-Ho;Bae, Suk-Hui;Kim, Chul-Su;Song, Seok-Cheon;Heo, Chang-Hoe;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.413-415
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    • 2000
  • Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

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Composition and Mechanical Properties of Nickel Deposit Obtained from Electroless Nickel Plating Bath Contained Triethanolamine as Complexing Agent (트리에탄올아민을 착화제로 사용한 무전해 니켈도금욕에서의 석출물의 조성 및 기계적 성질)

  • Yeo, Woon-Kwan;Moon, In-Hyung
    • Journal of the Korean institute of surface engineering
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    • v.19 no.2
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    • pp.31-43
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    • 1986
  • The properties of the electroless nickel deposit mainly depends on the pH of the bath, the plating temperature, and the molar ratio of nickel to hypophosphite but they are also affected by its formulation and concentration of complexing and buffering agents. According to changeing the concentration of triethanolamine and boric acid, phosphorous contents, microsturcture, crystalline, hardness and wear resistance of deposits obtained from ammoniacal alkaline bath were investigated by EPMA, differential thermal analyser, X-ray diffractometer and wear tester. The results are as follows; (1) Increasing concentration of triethanolamine in the bath, the deposits is slightly inclined to increase its phosphorous content(3.7% P). (2) In the as-plated state, the deposits are not crystallized state but they are thermally unstable phase, and they are crystallized with precipitating $Ni_3P$ at 400$^{\circ}C$. (3) The deposit containing 2.3% P has higher hardness value in the as plated and heat treated state at below 300$^{\circ}C$ than those of 3.7% phosphorous deposit (1090Hk). But in the case of heat treating at 400$^{\circ}C$, the former has lower hardness value (1000Hk) than the latter and has remarkably Ni(III) orientation by heat treatment. (4) The 3.7% phosphorous deposit heat treated at 400$^{\circ}C$ has better wear resistance than hard chromium plating.

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Etching Characteristics of Gold Thin Films using Inductively Coupled CF4/CI2/Ar Plasma (CF4/CI2/Ar유도 결합 플라즈마에 의한 gold 박막의 식각특성)

  • 김창일;장윤성;김동표;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.564-568
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    • 2003
  • The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

A Rapid and Simple Homogenizing Method for the Purification of Single-walled Carbon Nanotubes

  • Choi, Sang-Kyu;Jung, Seung-Il;Lee, Seung-Beck
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.5
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    • pp.209-212
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    • 2008
  • We developed a simple and effective purification method to obtain high-purity single-walled carbon nanotubes (SWCNTs) with low surface damage. The purification process consists of oxidization at $430^{\circ}C$ for 1 h in a furnace system of air atmosphere and homogenization in dilute hydrochloric acid solution for extremely short time. The role of homogenizer was examined during purification process in terms of purity and quality of purified SWCNTs. High-purity and low surface damage of SWCNT products was obtained using homogenizer which was operated at 8500 rpm for 10 min in the environment of 7 % HCI solution. From XRD spectra, we observed that metal catalysts were thoroughly removed. Raman spectra showed that the intensity values of crystallization ($I_{G}/I_{D}$) of purified SWCNTs were very similar with that of pristine SWCNTs. Moreover, the structure damage of purified SWCNTs was hard to find from electron microscopy. Consequently, homogenizing, which is a quick and simple manner, can be promising method for obtaining final SWCNTs with clearly high purity and crystallinity.