• Transactions of the Korean hydrogen and new energy society
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• v.16 no.4
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• pp.324-333
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• 2005

The kinetics of external hydrogen embrittlememt is considered. The equation of the crack growth rate (CGR) is derived from modification of the model developed by Wilkinson and Vitek. After calculation of hydrogen pressure build-up in the void, the effect of the internal hydrogen pressure on the void growth is added. The CGR is expressed by two terms. One is the term dependent on the critical stress, which is exactly same as Wilkinson and Vitek. The other is term dependent on the pressure of the hydrogen in void.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.17-24
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• 2001

A model for quantifying the effect of steam pressure on the oxide thickness growth was developed based on the experimental data available. First, empirical equations for the thickness estimation of oxide formed in 1 atm steam were made. The oxide growth kinetics turned out to be dependent on 0.4th power of oxidation time. With an assumption that the transition oxide thickness be only a function of temperature, a model for the enhancement of steam pressure on oxide growth was developed. The enhancement coefficient for steam pressure is calculated to be 0.01~0.013 $bar^{-}$. The developed model generally well explains the experimental data.a.

• Environmental Engineering Research
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• v.20 no.4
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• pp.347-355
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• 2015

The growth kinetics of phototrophic microorganisms can be controlled by the light irradiance, the concentration of an inorganic nutrient, or both. A multi-component kinetic model is proposed and tested in novel batch experiments that allow the kinetic parameters for each factor to be estimated independently. For the cyanobacterium Synechocystis sp. PCC6803, the estimated parameters are maximum specific growth rate $({\mu}_{max})=2.8/d$, half-maximum-rate light irradiance $(K_L)=11W/m^2$, half-inhibition-rate light irradiance $(K_{L,I})=39W/m^2$, and half-maximum-rate concentration for inorganic carbon $(K_{S,Ci})=0.5mgC/L$, half-maximum-rate concentration for inorganic nitrogen $(K_{S,Ni})=1.4mgN/L$, and half-maximum-rate concentration for inorganic phosphorus $(K_{S,Pi})=0.06mgP/L$. Compared to other phototrophs having ${\mu}max$ estimates, PCC6803 is a fast-growing r-strategist relying on reaction rate. Its half-maximum-rate and half-inhibition rate values identify the ranges of light irradiance and nutrient concentrations that PCC6803 needs to achieve a high specific growth rate to be a sustainable bioenergy source. To gain the advantages of its high maximum specific growth rate, PCC6803 needs to have moderate light illumination ($7-62W/m^2$ for ${\mu}_{syn}{\geq}1/d$) and relatively high nutrient concentrations: $N_i{\geq}2.3 mgN/L$, $P_i{\geq}0.1mgP/L$, and $C_i{\geq}1.0mgC/L$.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.43-44
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• 2001

• Journal of Welding and Joining
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• v.20 no.3
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• pp.16-23
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• 2002

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2483-2488
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• 2012

The X-ray line broadening technique was used to calculate the grain size of MgO at 1023, 1123, 1223 K respectively either in $CO_2$ or during the thermal decomposition of magnesites in air as well as in vacuum. By referring to the conventional grain growth equation, $D^n=kt$, the activation energy and pre-exponential factor for the process in air are gained as 125.8 kJ/mol and $1.56{\times}10^8\;nm^4/s$, respectively. Ranman spectroscopy was employed to study the surface structure of MgO obtained during calcination of magnesite, by which the mechanism of grain growth was analyzed and discussed. It is suggested that a kind of highly reactive MgO is produced during the thermal decomposition of magnesites, which is exactly the reason why the activation energy of the grain growth during the thermal decomposition of magnesite is lower than that of bulk diffusion or surface diffusion.

• Environmental Engineering Research
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• v.10 no.6
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• pp.283-293
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• 2005

Characteristics of sulfur-based autotrophic denitrification in a semi-continuous type reactor and the kinetic parameters were studied. Enriched autotrophic denitrifying culture was used for the reactor operation. Biomass growth on sulfur particles and in the liquid medium was monitored using the DAPI staining method. From the result of ion concentration changes and the biomass growth, maximum specific growth rate, ${\mu}_{max}$, and the half velocity constant, $K_M$, were estimated as $0.61\;d^{-1}$ and 3.66 mg/L, respectively. Growth yield coefficient, Y values for electron acceptor and donor were found as 0.49 gVSS/g N and 0.16 gVSS/g S. The biomass showed specific denitrification rate, ranging 0.86-1.13 gN/g VSS-d. A half-order equation was found to best simulate the denitrification process in the packed bed reactor operated in the semi-continuous mode.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.