• Journal of the Korean Society for Heat Treatment
• /
• v.36 no.4
• /
• pp.215-222
• /
• 2023

3Y-TZP (3 mol% yttria-stabilized tetragonal zirconia polycrystals, 3Y-TZP) ceramics are emerging as dental implant materials due to their superior optical and mechanical properties as well as excellent biophysical properties, in spite of low bioactivity. In this study, we investigated to sintered properties and microstructural defects of dental zirconia implants fabricated by ceramic injection molding and post-HIP (Hot isostatic pressing) processing and analyzed the processing parameters related with the obtainment of its high sinterd density. Sintered and microstructural parameters, i.e, apparent density, grain size and phase composition of zirconia implants fabricated by injection molding were dependent on the fixtute size and implant type. Maximum sintered density of 99.2% and minimum grain size of 0.3-0.4 ㎛ were obtained from large-scaled 2-body sample. In 1-body ceramic implant, high sintered density of 99.5% was obtained, but it had a little monoclinic phase and wide grain size distribution.

• Progress in Superconductivity
• /
• v.1 no.1
• /
• pp.14-19
• /
• 1999

Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.51 no.spc1
• /
• pp.255-258
• /
• 2006

This study was carried out to find the effect of the pinching and planting density on yield of petal and grain in safflower (Caythamus tinctorius L.). The planting density was high effective branch number per $m^2$ compared with pinching, and effective flower bud was most in $270ea/m^2$ in three line planting density, but in case of pinching was few at $186{\sim}223ea/m^2$ Grain yield was increased with 231 kg/10a at double line planting density compared with in 220 kg/10a of control. Petal yield of double line and three line planting density was 25.4 kg/10a and 26.9 kg/10a, it was increased 15, 22% compared with 22.0 kg/10a of control, respectively.

• Journal of Sensor Science and Technology
• /
• v.26 no.2
• /
• pp.122-127
• /
• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• Electrical & Electronic Materials
• /
• v.9 no.6
• /
• pp.542-550
• /
• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.533-536
• /
• 2003

YIG(Yttrium Iron Garnet) is one of the most widely used ferrites for microwave telecommunication. It used as a passive devices such as isolators and circulators. In order to reduce the insertion losses of these passive devices, it is very important to reduce magnetic loss of the ferrites. In general, the magnetic losses of ferrites is closely related to the microstructure of the ceramics. In the sintering of YIG, pores are easily trapped in grains and grain boundaries. These pores cause to increase magnetic losses of the sinterted bodies. In this paper, the effect of the $SiO_2$ addition on the microstructure was discussed. Increasing the $SiO_2$ addition, the grain size was reduced, which means that added acts as a grain-growth inhibitor. During the sintering, $SiO_2$ settled down on the grain boundaries, and drag the grain growth. Therefore, there is enough time for pores to move out. The relative density of YIG sintered at $1350^{\circ}C$ with 1 mol% $SiO_2$ addition was 99.6%. $\Delta$H of these samples was under 50 Oe.

• Journal of Surface Science and Engineering
• /
• v.27 no.5
• /
• pp.292-302
• /
• 1994

Alloy deposits of 80Sn-20Pb, electroplated on Cu-based leadframe alloy from an organic sulfonate bath were aged at $150^{\circ}C$ to form intermetallic phases between substrate and deposit, and effects of the deposit morphology, influenced by deposition conditions, on the fracture resistance of the 80Sn-20Pb deposit aged at $150^{\circ}C$ were examined. The growth rate of intermetallic compound layer on aging depended on the microstructure of deposit ; it was fastest in deposit formed using pulse current in bath without grain refining additive, but slowest in deposit formed using dc current in bath containing grain refining additive in spite of similar structure with equivalent grain size. The grain refining additive incorporated in electrodeposit appears to inhibit diffusion of atoms on aging, resulting in slow growth of intermetallic layer in the thickness direction but substantial growth in the lateral one. Density of surface cracks that were occurring when samples were subjected to the $90^{\circ}$-bending test increased with increasing the thickness of intermatallic layer on aging. For the same aged samples, the surface crack density of the sample electrodeposited from a bath containing the grain refining additive was the least due to the inhibiting effect of the additive incorporated into the deposit during electrolysis on atomic diffusion.

• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.868-873
• /
• 2011

In this study, the fabrication of ultra fine grained Mo bulk was conducted. $MoO_3$ nanopowders were prepared by a high energy ball-milling process and then reduced at the temperature of $800^{\circ}C$ without holding time in $H_2$ atmosphere. The particle size of Mo nanopowder was ~150 nm and grain size was ~40 nm. The two-step process was employed for the sintering of Mo nanopowder to obtain fine grain size. The densification over 90% could be obtained by the two-step sintering with a grain size of less than 660 nm. For higher density, modified two-step sintering was designed. 95% of theoretical density with the grain size of 730 nm was obtained by the modified two-step sintering.

• Electrical & Electronic Materials
• /
• v.10 no.10
• /
• pp.1034-1040
• /
• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Journal of the Semiconductor & Display Technology
• /
• v.14 no.1
• /
• pp.67-71
• /
• 2015

Pulse electroplating was studied to form nanocrystal structure effectively by changing plating current density and duty cycle. When both of plating current density and duty cycle were decreased from $100mA/cm^2$ and 70% to $50mA/cm^2$ and 30%, the P content in the Ni matrix was increased almost up to the composition of $Ni_3P$ compound and the grain growth after annealing was retarded as well. The as-plated hardness values ranging from 660 to 753 HV are mainly based on the formation of nanocrystal structure. On the other hand, the post-anneal hardness values ranging from 898 to 1045 HV, which are comparable to the hardness of hard Cr, are coming from how competition worked between the precipitation of $Ni_3P$ and the grain coarsening. According to the ANOVA and regression analysis, the plating current density showed more strong effect on nanocrystal size and film hardness than the duty cycle.