• Applied Microscopy
• /
• v.39 no.1
• /
• pp.27-40
• /
• 2009

Acute respiratory distress syndrome (ARDS), also known as an acute inflammatory lung disease is developed by various factors that is originated from the destruction of alveolar-capillary barrier, and neutrophils plays an important role in the destruction. The study intended to confirm, the anti-inflammatory effect of germanium, whether a lung injury has been mitigated with the reduction of injury in alveolar-capillary barrier resulting from inhibition of neutrophils migration in lung tissue. Test groups were divided in saline administered CON, 5 hours of endotoxin administered LPS and 5 hours of endotoxin administered Ge+LPS following 1 hours of pre-processed germanium. $100{\mu}g$ endotoxin was melted in 0.5 mL saline and sprayed into airway and 26 mg germanium per 100 g weight was administered into abdominal cavity. The endotoxin group which induced an acute lung injury with administered endotoxin showed dramatic increase of pulmonary edema (p<0.001), protein contents in bronchoalveolar lavage fluid, BALF (p<0.05) and neutrophils of infiltration in BALF (p<0.001) comparing with a control group, while a pre-treated germanium group showed significant decrease in all categories comparing to the endotoxin administerd group. In the result of a microscopic observation, the structure of alveolar-capillary barrier which is constructed with basal lamina, alveolar type I cells and endothelial cell were preserved of the pre-treated germanium group relatively well compare to the endotoxin administered group. And the construction of lamellar body, microvilli and basal lamina of alveolar type II cells were also preserved relatively well. Hence, germanium activates as an anti-Inflammatory mediator in other words, it interfered neutrophils migration into lung tissue, thereby reduced injury of alveolar-capillary barrier from toxic substances of activated neutrophils. Consequently, the study has determined that the acute lung injury induced by endotoxin has been decreased by the pre-treated germanium.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.11
• /
• pp.1164-1169
• /
• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.202-202
• /
• 2010

최근 반도체 소자의 미세화에 따라, 단채널 효과에 의한 누설전류 및 소비전력증가 등이 문제가 되고 있다. DRAM의 경우, 캐패시터 영역의 축소문제가 소자집적화를 방해하는 요소로 작용하고 있다. 1T-DRAM은 기존의 DRAM과 달리 캐패시터 영역을 없애고 상부실리콘의 중성영역에 전하를 저장함으로써 소자집적화에 구조적인 이점을 갖는다. 또한 silicon-on-insulator (SOI) 기판을 이용할 경우, 뛰어난 전기적 절연 특성과 기생 정전용량의 감소, 소자의 저전력화를 실현할 수 있다. 본 연구에서는 silicon-germanium-on-insulator (SGOI) 기판을 이용한 1T-DRAM의 열처리온도에 따른 특성 변화를 평가하였다. 기존의 SOI 기판을 이용한 1T-DRAM과 달리, SGOI 기판을 사용할 경우, strained-Si 층과 relaxed-SiGe 층간의 격자상수 차에 의한 캐리어 이동도의 증가효과를 기대할 수 있다. 하지만 열처리 시, SiGe층의 Ge 확산으로 인해 상부실리콘 및 SiGe 층의 두께를 변화시켜, 소자의 특성에 영향을 줄 수 있다. 열처리는 급속 열처리 공정을 통해 $850^{\circ}C$와 $1000^{\circ}C$로 나누어 30초 동안 N2/O2 분위기에서 진행하였다. 그리고 Programming/Erasing (P/E)에 따라 달라지는 전류의 차를 감지하여 제작된 1T-DRAM의 메모리 특성을 평가하였다.

• Korean Journal of Poultry Science
• /
• v.45 no.2
• /
• pp.119-124
• /
• 2018

This study was conducted to assess the effect of dietary addition of Germanium (Ge) on performance, egg quality, serum biochemical properties and yolk fatty acid composition in laying hens. At 74 weeks of age, a total of 360 Hy-line brown commercial layers were divided into four treatments with five replicates per treatment. Four dietary levels of Ge (0, 1, 2 and 4%) were added to the basal diets (ME: 2,750 kcal/kg, CP: 16%) and fed corresponding diet for a period of 12 weeks. The effects of these treatments on production performance and egg quality were measured three times at four week intervals, and at the end of the experiment, blood and egg yolk fatty acid were analyzed. The results showed that production performance parameters including egg production rate, feed intake, egg weight, egg mass and feed conversion ratio were non-significant, but dietary addition of 2% Ge tended to increase egg production rate. Eggshell strength was found to be significantly higher in Ge supplemented groups than in the control group (P<0.05), and eggshell thickness was also trended to be improved in Ge treated groups. In serum, triglyceride content was significantly greater (P<0.05), and the highest total cholesterol was found in hens of the control group as compared with that of the Ge supplemented groups. The yolk fatty acid composition including polyunsaturated fatty acid, unsaturated fatty acid and saturated fatty acid were not affected among the treatments but addition of 2 or 4% Ge in basal diet had significantly (P<0.05) increased monounsaturated fatty acid. Therefore, supplementation of Ge in laying hens diet has positive effects on egg quality and triglyceride in serum.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.5
• /
• pp.1547-1551
• /
• 2010

We newly propose the silver alloys of Ag-5wt%Ge-2.5wt%Cu(Ge1) and Ag-5wt%In-2.5wt%(In1) to overcome the tarnish and mechanically weak problems of the conventional sterling silver Ag-7.5wt%Cu (Cu1). We check the castability, surface color stability during process and wearing, and work hardening with plastic deformation of all three silver alloys. Our newly proposed silver alloys of Ge1 and In1 showed improved castability, anti-tarnish stability, and work hardening property compared to the conventional sterling silver, which implied that these alloys might be more appropriate for the high-end silver jewelry.

• IMMUNE NETWORK
• /
• v.6 no.2
• /
• pp.86-92
• /
• 2006

Background: Germanium compounds are increased to use in nutrient foods and medicines in terms of antibiotics to microbes, anticancer, modulation of immune system and neutralizing heavy metal toxins. Geranti Bio-Ge Yeast, containing stable organic germanium and bound to the yeast protein was developed by Geranti Pharm. LTD. and the modulation effect in the immune system was examined in vivo and in vitro. Methods: The compound, Geranti Bio-Ge Yeast, was fed to female Balb/c mice (each group has 10 mice) for 4 weeks and the yeast powder and steamed red ginseng powder were used as control during the same feeding time points. During 4 weeks there was no symptom to be considered, and after 4 weeks feeding all mice were sacrificed to check the changes of related immune cells and subsidiary responses (i.e. cell counting, FACS, MTT, LDH, PFC assay). Results: In pre-post comparison, B cell population was increased in the group of Geranti Bio-Ge Yeast in a dose dependent manner (100 to 800 mg/kg). However, the population of T cell, dendritic cell and macrophage was not comparably changed in all doses. The ability of cytokine production and proliferation was almost same level as shown in control group. In contrast, PFC assay informed that the compound increase the antibody production ability when fed over 200 mg/kg implying that the increase of PFC number might be due to the increase of B cells. Conclusion: Over the entire study, we concluded that the compound, Geranti Bio-Ge Yeast has better potential in immune response in terms of B cell proliferation than that of positive control, red ginseng, and the compound can be one of the future candidates for a new supplementary source improving immune system activity.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.1069-1072
• /
• 2003

Germane-sillicide phase formation on S $i_{0.25}$G $e_{0.75}$ with Ni 100$\square$, Co 10$\square$/Ni 100$\square$ and Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer was studied by sheet resistance and Field Emission Scanning Electron Microscopy(FESEM). Thermal stability of nickel germane-silicide is found to be improved by sputtering Ni/Co/Ni on the SiGe. After annealing at 600, 650, $700^{\circ}C$, 30min., the nickel germane-silicide formed by Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer achieved a sheet resistance less than 17ohms/sq.(almost the same to the value before furnace annealing for 30min.) , while the process of the other two ways result in high sheet resistance and even sheet resistance fail due to Ge segregation.ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.5
• /
• pp.399-402
• /
• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.10
• /
• pp.1389-1393
• /
• 2002

The non-spectroscopic interference effects that occurred in inductively coupled plasma/mass spectrometry were studied for Ge, As and Se in human urine and serum. Many biological samples contain Na, K, Cl and organic compounds, which may cause the enhancement and depression on the analyte signal. The effect of 1% concomitant elements such as N, Cl, S, P, C, Na, and K on a 100 ㎍/L germanium, arsenic and selenium signal has been investigated by ICP/MS. The interference effects were not in the same direction. It appeared that concomitant elements such as Cl, S, and C induce an enhancement effect, whereas N and P did not show any significant effect. And, Na and K caused a depression. We have found a link between the abundance of analytes and the ionization potential of concomitant elements (eV), except carbon and nitrogen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.271-275
• /
• 2011

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.