• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.804-812
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• 1994

Stable PZT coating sol was prepared using chelating agent, ethylacetoacetate(EAcAc) by sol-gel processing under ambient atmosphere. Through FT-IR spectrum analysis on solution of each reaction step, formation of metal complex was confirmed and prepared PZT sol was stable over several months. Through TG-DTA, XRD, FT-IR spetrum analysis of PZT gel powder, it was understood that the addition of EAcAc could reduce the transition temperature to ferroelectric phase, due to the increased homogeneity by matching the hydrolysis and condensation rates by chelation. Single perovskite phase was obtained by the heat-treatment at 54$0^{\circ}C$ for 30 min. The film was coated on ITO-coated glass substrate by dip coating method. After heat-treatment, PZT thin film had thickness in the range of 20~130 nm. The maximum dielectric constant of its thin film at room temperature and 1 kHz was 128.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.783-792
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass and Si/SiO2 substrates. In order to investigate the effect of catalysts on the densification and crystallization of PZT thin films, a nitric acid or ammonium hydroxide was added to the PZT stock solution at the state of partial hydrolysis reaction. The measured pH for a stable PZT sol was 5.2~9.3. In case of an acid-catalyzed PZT sol, a highly condensed particulate PZT sol was formed by accelerating the hydrolysis reaction. But weakly branched polymeric PZT sol was formed with a base-catalyzed condition. The difference in densification behavior was not found in the pH range of added catalyst, but the refractive index of PZT thin film was increased rapidly as the annealing temperature increased. The PZT thin film annealed at 54$0^{\circ}C$ for 10 min was fully densified and its refractive index was above 2.4. When the annealing temperature increased, the transition from the pyrochlore phase to perovskite appeared at 54$0^{\circ}C$. The base-catalyzed PZT thin film suppressed to form the pyrochlore phase and proceeded effectively to convert the perovskite phase. This was due to the formation of polymeric molecular structure by controlling the hydrolysis and condensation reaction through the additiion of the ammonium hydroxide.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.191-196
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• 1995

Using sol-gel processing method, thin films of lathanum modified lead titanate(PLT) on Corning 7059 glass were prepared. A differential thermal analysis (DTA/TG) curve of gel powder and infrared spectra (FT-IR) of the films were measured to estimate residual organices in them. The heat-treated films were characterized by X-ray diffraction(XRD). Microstructures of the films were observed by a scanning electron microscope (SEM). Optical properties of the films were determined by a UV-VIS spectrophotometer. The waveguiding properties and optical attenuation were measured with the end coupling method and the cut back method. Effects of the drying conditions on the transmittance and the propagation loss of the films were investigated. Experimemtal results showed that the content of residual organics in the film decreased as the drying temperature of the film increased. As the La content of the film increased, the grain size decreased and the transmittance increased. The transmittances of the films increased with the increasing of the drying temperature. The propagation losses in the film decreased as the drying temperature increased.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.689-693
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• 2014

Anti-reflection coating films have used to increase the transmittance of displays and enhance the efficiency of solar cells. Hydrophobic anti-reflection coating films were fabricated on a glass substrate by sol-gel method. To fabricate an anti-reflection film with a high transmittance, poly ethylene glycol (PEG) was added to tetraethyl orthosilicate (TEOS) solution. The content of PEG was changed from 1 to 4 wt% in order to control the morphology, thickness, and refractive index of the $SiO_2$ thin films. The reflectance and transmittance of both sides of the coated thin film fabricated with PEG 4 wt% solution were 0.3% and 99.4% at 500 nm wavelength. The refractive index and thickness of the thin film were n = 1.29 and d = 105 nm. Fluoro alkyl silane (FAS) was used for hydrophobic treatment on the surface of the anti-reflection thin film. The contact angle was increased from $13.2^{\circ}$ to $113.7^{\circ}$ after hydrophobic treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.220-224
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• 2016

Anti-reflection (AR) thin films were fabricated on a glass substrate by using an ultrasonic spray. Glycidoxypropyl trimethoxysilane (GPTMS) and tetraethyl orthosilicate (TEOS) were used to synthesize a sol-gel hybrid coating solution. The moving speed of spray nozzle was changed from 15~25 mm/s to control the coating thickness of AR thin film. As the moving speed of spray nozzle increased, the thickness of AR thin film decreased from 138 nm to 86 nm. When the AR thin film was fabricated by nozzle moving speed of 20 mm/s, the refractive index and thickness of AR thin film was measured to be 1.31 and 104 nm, respectively. The average reflectance and transmittance of AR thin film coating glass was measured to be 0.75 % and 94 %, respectively into the visible light range of 380~780 nm.

• Journal of the Korean Applied Science and Technology
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• v.40 no.5
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• pp.1116-1125
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• 2023

Zinc oxide film is a transparent conductive material and is used in optoelectronic devices in various fields. Therefore, characterization of the zinc oxide film will play a very important role in improving the performance of optoelectronic devices. Here, we will evaluate the morphological and structural characteristics of such a zinc oxide film based on the solution process. Specifically, the sol-gel method will be repeatedly performed to observe the change in material properties of the zinc oxide film according to the number of times of spin-coating. It was confirmed that crystallization proceeded as a result of performing the sol-gel method repetitively 5 times under constant solution conditions. At 7 times or more, the element composition and crystallinity tended to converge to a specific value. The average crystal size of the final zinc oxide film was calculated to be about 10.7 nm. In this study, the number of processes showing optimal crystallization was 7 times. The results and methodology of this study can be applied while varying various solution process variables and are expected to contribute to establishing optimal process conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.