• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Microbiology and Biotechnology Letters
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• v.35 no.2
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• pp.163-172
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• 2007

This study was designed to investigate that inorganic germanium $(GeO_2)$ did not exist in germanium-fortified yeast or obtained to non-detectable value by current analytical methods and equipments. For this purpose, we achieved $GeO_2$ qualitative analysis protocol which could be the scientific basis of the study. Since reddish brown precipitate was formed from the reaction of $GeO_2$ with 1 equiv $NaBH_4$, and dark brown precipitate was also formed from the reaction of $GeO_2$ with 2 equiv $NaBH_4$, $GeO_2$ was qualitatively analyzed by observing these particular colored-precipitates. Because no color change was showed from the reaction between $NaBH_4$ and $SiO_2$, the color change could be caused by charge transfer transition on Ge-O and B binding properties. The reaction between $NaBH_4$ and germanium-fortified yeast did not show any color change and precipitate formation which meant no $GeO_2$ existed in germanium-fortified yeast. The reaction between $NaBH_4$ and supernatant specimen collected from the outside of dialysis membrane (MWCO 1,200 dalton) did not show any color change and precipitate formation. Therefore, we considered that the both germaniums in and outside of the dialysis membrane were organic germaniums. Germanium-fortified yeast which was biosynthesized organic germanium can be applied not only as a new functional material for improving health, prevention and treatment of chronic degenerative diseases including cancers, and the regulation of immune system, but also as a new materials.

• Korean Journal of Soil Science and Fertilizer
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• v.44 no.3
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• pp.465-472
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• 2011

To investigate the effect of inorganic ($GeO_2$) and organic (Ge-132) germanium treatment on Brasica juncea C. plant, growth characteristics and Ge contents were examined with various inorganic or organic germanium treatments (0, 5, 10, 25, 50, 75 and $100mg\;L^{-1}$), respectively. Brasica juncea C. growth did not much inhibited until Ge $10mg\;L^{-1}$ concentration under both Ge-132 and $GeO_2$ treatments as compared to control. On the other hand, at Ge concentration higher than $25mg\;L^{-1}$ concentration, Brasica juncea C. growth was inhibited under both Ge-132 and $GeO_2$ treatments. Under treatment of $GeO_2$, length of root and shoot slightly increased until $5mg\;L^{-1}$ concentration and dry weight slightly increased until $10mg\;L^{-1}$ concentration. Under treatment of Ge-132, length of root and shoot slightly increased until $10mg\;L^{-1}$ concentration and dry weight slightly increased until $25mg\;L^{-1}$ concentration. Total Ge contents in Brasica juncea C. early seedlings with $GeO_2$ treatment were a bit higher than those with Ge-132 treatment. Germanium was primarily accumulated in the roots (77%) with organic Ge (Ge-132) treatments, whereas Ge was primarily accumulated in the leaf (70%, respectively) with $GeO_2$ treatments. The Ge uptake rates in inorganic Ge treatments were slightly high than those in organic Ge treatments. Under inorganic Ge treatment with $2.5mg\;L^{-1}$, about 3% of Ge was accumulated into plant and distribution in leaf and root was 84.8% and 15.2%, respectively. Under organic Ge treatment with $2.5mg\;L^{-1}$, about 2.6% of Ge was accumulated into plant and distribution in leaf and root was 66.4% and 33.6%, respectively.

• Journal of Radiation Industry
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• v.10 no.4
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• pp.189-192
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• 2016

$^{68}Ga$ has emerged as a promising candidate for non-invasive diagnostic imaging within Positron Emission Tomography (PET) because of its advantageous radiochemical characteristics ($t_{1/2}=68min$, ${\beta}^+$ yield ~89%). $^{68}Ga$ forms a stable chelation with various ligands and it is possible to be quickly and easily study using a $^{68}Ge/^{68}Ga$ generator. Commercial $^{68}Ge/^{68}Ga$ generators are chromatographic system using the inorganic materials such as alumina and tin dioxide which are employed as column matrixes for $^{68}Ge$. In this study, we tried out to make $^{68}Ge/^{68}Ga$ generator system with the $^{68}GeO_2$ microstructures for column matrix. $^{68}Ge$ tends to have stable bond with oxide as $^{68}GeO_2$ microstructures. The $^{68}GeO_2$ has been synthesized by hydrolysis of $GeCl_4$ (sol-gel method) and characterized by X-ray diffraction and scanning electron microscope for geometrical analysis. The stability of $GeO_2$ was tested using eluents with diverse solvents(water, ethanol and 0.1 N HCl). The radioactivity of $^{68}Ga^{3+}$ in eluate through $GeO_2$ was measured to prove a function as column material for a generator.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.699-705
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• 2008

Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.

• Journal of the Korean Electrochemical Society
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• v.18 no.4
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• pp.161-171
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• 2015

High-yield zinc germanium oxide ($Zn_2GeO_4$) and zinc tin oxide ($Zn_2SnO_4$) nanowires were synthesized using a hydrothermal method. We investigated the electrochemical properties of these $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires as anode materials of lithium ion battery and sodium ion battery. The $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires showed excellent cycling performance of the lithium ion battery, with a maximum capacity of 1021 mAh/g and 692 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 98 %. For the first time, we examined the cycling performance of $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires for sodium ion batteries. The maximum capacity is 168 mAh/g and 200 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 97%. These nanowires are expected as promising electrode materials for the development of high-performance lithium ion batteries as well as sodium ion batteries.