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http://dx.doi.org/10.4313/JKEM.2008.21.8.699

Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material  

Park, Byoung-Jun (Department of Electrical Engineering, Korea University)
Lee, Hye-Ryeong (Department of Electrical Engineering, Korea University)
Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University)
Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.8, 2008 , pp. 699-705 More about this Journal
Abstract
Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.
Keywords
Germanium; Memories; Nanotechnology; null;
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