• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• The KIPS Transactions:PartA
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• v.10A no.5
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• pp.513-518
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• 2003

The quantity of container transportation of the world habors is constantly increasing by 8.8 per year until 2011. Present port facilities will not satisfy it. So facility expansion is necessary. Because the processing cost in the harbor becomes to 30% of total transportation expense, major pors inthe world are making an effort in the automation facilities to solve the problems of higher labor costs and indufficient labor and to maximize the efficiency of the work and use of the land. Especially, the automation of the gate, which is the place of cargo's appearance and disappearance, the node which creates the information, is now rising as the important issue. In this study suggest more efficient design for port gate automation. First, calculate scale of gate complex, and compare of 1 step gate and 2 step, and optimal design for automated operation method of gate process.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.10
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• pp.1317-1326
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• 1999

As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by $0.6{\mu}m$ layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.3
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• pp.50-54
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• 2001

Manufacturing is characterized by increasing product variety and technical complexity, decreasing levels of demand, expanding global competition and declining profitability of organizations. To survive in such a complex environment, development of the automatic design system into design and manufacturing can be introduced to increase the flexibility and adaptability to markets. This paper presents the development of an automatic water-gate design system that composed of a main program and three modules, and was programmed by AutoLISP language under AutoCAD system. The devel-oped system is capable of generating water-gate design automatically according to input data as customer requirement.

• Journal of Industrial Technology
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• v.27 no.B
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• pp.15-20
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• 2007

This paper presents the new design method for the gate driver circuit of the floating MOSFET by using the pulse transformer. Each parameters of the proposed circuit are delivered by the numerical calculation method. By considering inner characteristics of MOSFET, the gate driver makes to increase the efficiency of the power conversion and decrease operating heat. Computer simulations and to experimental results for a Buck Converter are presented in order to validate the proposed method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.16-24
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• 2009

Independent-gate-mode double-gate(IGM-DG) MOSFET overcomes the limitation of 3-terminal device structure, and enables to operate with different voltages for front-gate and back-gate. Therefore, circuit designs becomes not only simple, but also area-efficient due to the controllability of the 4th terminal provided by IGM-DG MOSFETs. In this paper, an RF receiver utilizing IGM-DG MOSFETs is presented and also, the circuit performance is verified by the HSPICE simulations. Besides, the circuit analysis and optimization are performed for various IGM-DG characteristics.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.56-62
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• 2003

In this paper, we designed a adder and a multiplier using current mode T-gate on $GF(2^2)$. The T-gate is consisted of current mirror and pass transistor, the designed 4-valued T-gate used adder and multiplier on $GF(2^2)$. We designed its under 1.5um CMOS standard technology. The unit current of the circuits is 15㎂, and power supply is 3.3V VDD. The proposed current mode CMOS operator have a advantage of module by T-gate`s arrangement, and so we easily implement multi-valued operator.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.435-436
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• 2009

In the effort on cost reduction in marine equipment company, the medium sized impeller blade ($500mm{\times}200mm{\times}20mm$) of an axial flow pan was manufactured by the high pressure die casting, with which was replaced the gravity die casting. High pressure die casting is a practical alternative because of some advantages such as excellent accuracy and smooth cast surface as well as cost reduction if a certain amount of porosity in the parts can be minimized. In order to reduce the porosity in the center of the neck which is thickest region of the impeller blade, the several gate designs were proposed in this work. The flow simulations for each gate design were performed and then the optimal design was determined by considering the air pressure distribution in neck section. Finally, the size of porosity in the neck of the die cast impeller blade for optimal design was less than 1mm, which satisfied the requirement.

• Transactions of the Korean Society of Automotive Engineers
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• v.14 no.4
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• pp.192-198
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• 2006

The real-time simulator of a turning-type sluice gate actuated by the hydraulic cylinders is developed using a PC and a visual C++ program language. The real-time simulator receives the directional control valve signal selected by the operator using the mouse, updates the state variables of the turning-type sluice gate system responding to the control signal, and draws the moving figures of the sluice gate, cylinder, reserved water every drawing time on the PC monitor. Also, the operator can observe the sluice gate angle, cylinder force, cylinder pressures, and hydraulic power representing the operation of sluice gate system through the PC monitor every drawing time. The simulator can be a very useful tool to design and improve the turning-type sluice gate system.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.2
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• pp.111-121
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• 1999

This paper deals with an active gate drive (AGD) technolo밍T for high power IGBTs. It is based on an optimal c combination of several requirements necessmy for good switching performance under hard switching conditions, The s scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast driver requirements for high speed switching and low switching energy loss The gate drive can also effectively dampen oscillations during low cunent turnlongrightarrowon transient in the IGBT, This paper looks at the conflicting requirements of the c conventional gate dlive circuit design and the experimental results show that the proposed threelongleftarrowstage active gate dlive t technique can be an effective solution.