• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Design & Manufacturing
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• 제15권1호
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• pp.1-7
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• 2021

The position of the gate is one of the important factors for optimal injection molding. This is because inappropriate gate positions cannot fill the cavity uniformly, which can lead to defects such as contraction. In this study, CAE was performed on hot runner injection molding of the washing machine base and plasticity was compared by changing gate position from existing gate position. A total of two alternatives have been applied to compare the plasticity of the washing machine base according to its optimal gate position. The gate position of the improved molds and the gate position of the current mold is analyzed by injection molding analysis. The results of the fill time, the pressure at V/P switchover, clamping force, and deflection were compared. In washing machine base injection molding, the deflection was reduced by about 3.76% in the improved mold 2. In improved mold 1, the fill time during injection molding was reduced by 3.32% to enable uniform charging, and the clamping force was reduced by 31.24%. We have confirmed that the position of the gate can change the charging pressure and the clamping force and affect the quality and cost savings of the molded product.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.490-493
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• 2002

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 side gate 길이와 side gate 전압에 대한 최적의 값을 조사하였다. main gate 50nm에서 각각의 side gate 길이에 대한 최적의 side gate 전압은 대략 3V이다. 또한, main gate 길이에 대한 최적의 side gate 길이는 대략 70nm이다. 이때, side gate 길이에 대한 전달 컨덕턴스 및 subthreshold slope에 대한 값들을 나타내었다. 이때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• 품질경영학회지
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• 제42권3호
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• pp.279-290
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• 2014

Purpose: The purpose of this study is to propose adoption of QFD and Stage-gate in order to analyze the quality of korea defense system. Methods: Drawing change data of initial production phase in korea defense system were anlayzed and a practical method was proposed. Results: The results of this study are as follows; Off line Quality Control should be introduced in development phase. Specially, in case of defense system, the best method is QFD(Quality Function Deployment) and Stage-gate process. At first, QFD 1 step defines product planning from VOC(Voice Of Customer), QFD 2 step specifies part planning from product planning, QFD 3 step defines process planning from part planning, QFD 4 step defines production planning from previous process planning. Secondly, Stage-gate process is adopted. This study is proposed 5 stage-gate in case of korea defense development. Gate 1 is located after SFR(System Function Review), Gate 2 is located after PDR(Preliminary Design Review), Gate 3 is located after CDR(Critical Design Review), Gate 4 is located after TRR(Test Readiness Review) and Gate 5 is located before specification documentation submission. Conclusion: Off line QC(Quality Control) in development phase is necessary prior to on line QC(Quality Control) in p roduction phase. For the purpose of off line quality control, QFD(Quality Function Deployment) and Stage-gate process can be adopted.

• 대한전자공학회논문지SD
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• 제39권7호
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• pp.1-6
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• 2002

본 연구에서는 나노 스케일 SOI 소자의 최적 설계를 위하여 multi-gate 구조인 Double 게이트, Triple 게이트, Quadruple 게이트 및 새로이 제안한 Pi 게이트 SOI 소자의 단채널 현상을 시뮬레이션을 통하여 분석하였다. 불순물 농도, 채널 폭, 실리콘 박막의 두께와 Pi 게이트를 위한 vertical gate extension 깊이 등을 변수로 하여 최적의 나노 스케일 SOI 소자는 Double gate나 소자에 비해 단채널 특성 및 subthreshold 특성이 우수하므로 채널 불순물 농도, 채널 폭 및 실리콘 박막 두께 결정에 있어서 선택의 폭이 넓음을 알 수 있었다.

• 산업경영시스템학회지
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• 제43권2호
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• pp.65-71
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• 2020

Worldwide plant market keeps maintaining steady growth rate and along with this trend, domestic plant market and its contractors also maintain such growing tendency. However, in spite of its external growth, win-win growth of domestic material industry that occupies the biggest share in plant industry cost portion is extremely marginal in reality. Domestic plant material suppliers are required to increase awareness of domestic material brand by securing quality and reliability of international standard through improvement of design quality superior to that of overseas material suppliers. Improvement of design quality of plant material becomes an essential element, not an option, for survival of domestic plant industry and its suppliers. Under this background, in this study, priority and importance by each evaluation index was analyzed by materializing plant design stage through survey of experts and defining evaluation index by each design stage and based on this analysis result, evaluation index of stage-gate based decision-making process that may improve design quality of plant material was suggested. It is considered that by utilizing evaluation index of stage-gate based decision-making process being suggested in this study, effective and efficient decision-making of project decision-makers would be enabled and it would be contributory to improve design quality of plant material.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.1044-1048
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• 2006

Nuclear power generation is very dangerous in occasion that skirt of structure by earthquake although it is high effective generation that can make a lot of energies with few raw material. when design, it must consider a lot of problems caused by an earthquake. The seismic analysis of the structure has been great concern in the engineering society with an effort to reduce the severe damages from an earthquake. So the earthquake resistant design is one of the crucial design procedures of a gate valve used in nuclear power generation. The gate valve which has the contact area between stem and bellows. Because of the contact area. The gate valve should be given high stress and frictional wear. In this thesis, Considering the gate valve which has some contact distance between stem and bellows. The gate valve which has some contact distance is analyzed by a commercial FEM code of Ansys and Then compared to the gate valve behavior which doesn't have contact distance.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1999년도 추계학술대회 논문집 - 한국공작기계학회
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• pp.87-92
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• 1999

The biggest challenge facing today manufacturing industry is better quality and high productivity. From an economic point of view, productivity is the most important parameter, as high productivity will reduce the cost. However, the customers of today are not only cost concerned, but also quality conscious. So high accuracy levels should also be achieved in the manufacturing process. This paper reports the development of a automatic design system based on AutoCAD program. This work is composed of three section that are design of top down menu, guide frame and gate lifter for water-gate programed by AutoLISP language and runned Windows system. The developed system ultimately generates the design for a water gate through AutoCAD program. In the design of the water gate, it needs about 23 hours with an expert, but this system can be only 80 seconds without an expert.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.27-31
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• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• 해양환경안전학회지
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• 제14권4호
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• pp.325-331
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• 2008

최근 조선산업의 호황으로 인하여, 신생 조선소들이 많이 설립되고 있다. 이러한 조선소의 설비상의 특징은 기존의 조선소에 비해 규모가 크며, 또한 진수방식을 대형조선의 방식인 드라이도크 진수를 채택하고 있다. 본 연구 논문에서는 드라이도크 게이트의 구조 설계 및 유한요소법을 적용한 구조해석에 대해서 나타내고 있다. 설계는 트라이본을 사용하였고, 구조강도 평가는 범용 유한요소 해석 프로그램인 ANSYS Multiphysics 모듈을 이용하여 계산하였다. 드라이도크 게이트는 자주 개폐를 하지 않으며, 도크내에서 일정한 건조 기간동안 외부의 해수압을 견딜 수 있는 구조 강도를 갖고 있어야만 한다. 실제적으로, 이 구조물의 설계 및 구조강도 평가에 대한 자료는 거의 찾아볼 수가 없어서, 설계 기준 및 합리적인 구조강도 평가에 대한 기준이 필요시 되고 있다. 향후 이러한 구조물의 설계 및 구조강도 평가에 본 연구논문은 기초적인 자료 및 참고문헌으로 유익하게 사용되리라고 판단된다.