• 제목/요약/키워드: Gate

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아산만 배수갑문 확장사업에 따른 아산만 해역의 수리특성 변화 검토 (Estimation for Changing of Hydraulic States Caused by Gate Expansion in Asan Bay)

  • 박병준;송현구;송태관;장은철
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2008년도 춘계학술대회논문집
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    • pp.337-340
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    • 2008
  • The gate expansion was planed to increase discharge capacity of gate structure at sea dike in Asan Bay. So it was estimated for changing of hydraulic states in Pyeongteak Harbor Zone caused by gate expansion, by 2D and 3D CFD Module. In result, influence of gate expansion was less than tidal current and discharge ratio between old gate and new gate was 4:6.

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QFD 및 Stage-gate 모델을 활용한 국방분야 개발단계 품질관리 방안 연구 (A Study on the development quality control by application of QFD and Stage-gate in defense system)

  • 장봉기
    • 품질경영학회지
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    • 제42권3호
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    • pp.279-290
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    • 2014
  • Purpose: The purpose of this study is to propose adoption of QFD and Stage-gate in order to analyze the quality of korea defense system. Methods: Drawing change data of initial production phase in korea defense system were anlayzed and a practical method was proposed. Results: The results of this study are as follows; Off line Quality Control should be introduced in development phase. Specially, in case of defense system, the best method is QFD(Quality Function Deployment) and Stage-gate process. At first, QFD 1 step defines product planning from VOC(Voice Of Customer), QFD 2 step specifies part planning from product planning, QFD 3 step defines process planning from part planning, QFD 4 step defines production planning from previous process planning. Secondly, Stage-gate process is adopted. This study is proposed 5 stage-gate in case of korea defense development. Gate 1 is located after SFR(System Function Review), Gate 2 is located after PDR(Preliminary Design Review), Gate 3 is located after CDR(Critical Design Review), Gate 4 is located after TRR(Test Readiness Review) and Gate 5 is located before specification documentation submission. Conclusion: Off line QC(Quality Control) in development phase is necessary prior to on line QC(Quality Control) in p roduction phase. For the purpose of off line quality control, QFD(Quality Function Deployment) and Stage-gate process can be adopted.

개량형 가동보에 적용하기 위한 하이브리드 강판/GFRP 패널 게이트의 강판게이트 표면형상에 따른 휨 및 계면 부착 특성 평가 (Flexural and Interfacial Bond Properties of Hybrid Steel/Glass Fiber Reinforced Polymer Composites Panel Gate with Steel Gate Surface Deformation for Improved Movable Weir)

  • 김기원;권형중;김필식;박찬기
    • 한국농공학회논문집
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    • 제57권2호
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    • pp.57-66
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    • 2015
  • The purpose of this study was to improved the durability of a improved movable weir by replacing the improved movable weir's metal gate with a hybrid steel/glass fiber reinforced polymer composites panel gate. Because the metal gate of a improved movable weir is always in contact with water, its service life is shortened by corrosion. This study made four type of hybrid steel/glass fiber reinforced polymer composites panel gate with different steel gate surface deformation (control, sand blast, scratch and hole), flexural. Fracture properties tests were performed depending on the steel gate surface deformation. According to the test results, the flexural behavior, flexural strength and fracture properties of hybrid steel/glass fiber reinforced polymer composites panel gate was affected by the steel panel gate surface deformation. Also, the sand blast type hybrid steel/glass fiber reinforced polymer composites panel gate shows vastly superior flexural and fracture performance compared to other types.

나노 스케일 SOI MOSFET를 위한 소자설계 가이드라인 (Device Design Guideline for Nano-scale SOI MOSFETs)

  • 이재기;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제39권7호
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    • pp.1-6
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    • 2002
  • 본 연구에서는 나노 스케일 SOI 소자의 최적 설계를 위하여 multi-gate 구조인 Double 게이트, Triple 게이트, Quadruple 게이트 및 새로이 제안한 Pi 게이트 SOI 소자의 단채널 현상을 시뮬레이션을 통하여 분석하였다. 불순물 농도, 채널 폭, 실리콘 박막의 두께와 Pi 게이트를 위한 vertical gate extension 깊이 등을 변수로 하여 최적의 나노 스케일 SOI 소자는 Double gate나 소자에 비해 단채널 특성 및 subthreshold 특성이 우수하므로 채널 불순물 농도, 채널 폭 및 실리콘 박막 두께 결정에 있어서 선택의 폭이 넓음을 알 수 있었다.

Independent-Gate-Mode Double-Gate MOSFET을 이용한 RF Receiver 설계 (Design of RF Receiver using Independent-Gate-Mode Double-Gate MOSFET)

  • 정나래;김유진;윤지숙;박성민;신형순
    • 대한전자공학회논문지SD
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    • 제46권10호
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    • pp.16-24
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    • 2009
  • Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET는 기존의 DG-MOSFET의 3-terminal 소자구조가 갖고 있는 한계에서 벗어나 front-gate와 back-gate를 서로 다른 전압으로 구동하는 것이 가능하다. IGM-DG를 이용함으로써 4번째 단자의 자유도에 의해 회로설계가 간단해 질 뿐 아니라, 집적도를 향상시킬 수 있는 장점을 가진다. 본 논문에서는 IGM-DG MOSFET를 사용하여 RF 수신단을 설계하였고, HSPICE 시뮬레이션을 통해 회로성능을 검증하고 소자의 특성변화에 따른 최적의 회로설계 방향을 제시하였다.

T-gate를 이용한 $GF(2^2)$상의 가산기 및 승산기 설계 (A Design of an Adder and a Multiplier on $GF(2^2)$ Using T-gate)

  • 윤병희;최영희;김흥수
    • 전기전자학회논문지
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    • 제7권1호
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    • pp.56-62
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    • 2003
  • 본 논문에서는 유한체 $GF(2^2)$상에서의 가산기와 승산기를 전류모드인 T-gate를 이용하여 설계하였다. 제시된 회로는 전류 모드에서 동작하는 T-gate의 조합으로 가산 연산과 승산 연산을 수행하는 연산기를 설계하였다. T-gate는 전류 미러와 전송 게이트로 구성되며 4치 T-gate를 설계, 이를 이용하여 $GF(2^2)$의 가산기와 승산기를 1.5um CMOS 공정을 사용하였다. 전원전압은 DC 3.3V이며 단위 전류는 15uA이다. 본 논문에서 제시한 전류 모드 CMOS 연산기는 T-gate의 배열에 의한 모듈성의 이점을 가지고 있으므로 다치 T-gate를 구현하여 다치 연산기를 쉽게 구현할 수 있게 하였다.

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조선시대 사찰건축에서 정문(正門)과 문루(門樓)의 배치관계 변화 (Arrangement Changes of the Inner Gate and Gate-pavilion in Temple Construction of Joseon)

  • 홍병화;김성우
    • 건축역사연구
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    • 제18권1호
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    • pp.51-65
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    • 2009
  • The inner gate(The last gate inside a temple, facing the main hall) is not a well-known part in the temple construction of Joseon. This study is focused on seeking truth about the inner gate arrangement of the existing temples as well as proving that it has changed while maintaining a certain relationship with the gate-pavilion arrangement. The inner gate is related to the Cheondo ritual which is letting the dead people's spirits go to heaven, mainly performed in Buddhism, and it has been demonstrated that the inner gate has gradually disappeared as the importance of gate-pavilions has been emphasized along with the changes of the ritual. The inner gate was a common construction before the 18th Century but since that time, it has gradually disappeared and finally it faced the main hall as the gate-pavilion and made the 4 halls-centered arrangement with the temple dormitories on both sides.

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Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications

  • Oh Yong-Ho;Kim Young-Min
    • Journal of Electrical Engineering and Technology
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    • 제1권2호
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    • pp.237-240
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    • 2006
  • The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

휴대용제어단말기를 이용한 원격조정수문개발 (Remote Operation Water-gate Development using Portable Control Terminal)

  • 성백섭;박창언;김일수;차용훈;이진구
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2002년도 춘계학술대회 논문집
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    • pp.515-520
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    • 2002
  • This paper begin a new approach in the water-gate controller using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simple in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings information, over loading and position of water-gate, and so on.

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무선통신을 이용한 수문제어장치 개발에 관한 연구 (A Study on the Worter-gate Control Device Development using Radio Communication)

  • 이진구;김인주;정영재;손준식;성백섭;김일수;박창언
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.612-615
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    • 2002
  • This paper begin a new approach in the water-gate control using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simpe in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings imformation, over loading and position of water-gate, and so on.

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