• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.166-169
• /
• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.2
• /
• pp.67-70
• /
• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.3
• /
• pp.83-87
• /
• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.361-365
• /
• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.2 s.11
• /
• pp.39-43
• /
• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.635-639
• /
• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.5
• /
• pp.189-193
• /
• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Journal of Electrochemical Science and Technology
• /
• v.2 no.3
• /
• pp.157-162
• /
• 2011

We report a simple route for synthesizing multi-dimensional structured silicon anode materials from commercially available bulk silicon powders via metal-assisted chemical etching process. In the first step, silver catalyst was deposited onto the surface of bulk silicon via a galvanic displacement reaction. Next, the silver-decorated silicon particles were chemically etched in a mixture of hydrofluoric acid and hydrogen peroxide to make multi-dimensional silicon consisting of one-dimensional silicon nanowires and micro-scale silicon cores. As-synthesized silicon particles were coated with a carbon via thermal decomposition of acetylene gas. The carbon-coated multi-dimensional silicon anodes exhibited excellent electrochemical properties, including a high specific capacity (1800 mAh/g), a stable cycling retention (cycling retention of 89% after 20 cycles), and a high rate capability (71% at 3 C rate, compared to 0.1 C rate). This process is a simple and mass-productive (yield of 40-50%), thus opens up an effective route to make a high-performance silicon anode materials for lithiumion batteries.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1512-1514
• /
• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.