• 제목/요약/키워드: Gamma oscillation

검색결과 30건 처리시간 0.028초

전자선 묘화 장치를 이용한 비대칭적인 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-게이트 PHEMT 공정 및 특성에 관한 연구 (A fabrication and characterization of asymmetric 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT device using electron beam lithography)

  • 임병옥;김성찬;김혜성;신동훈;이진구
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
    • /
    • pp.189-192
    • /
    • 2001
  • We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

  • PDF

Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions

  • Ibrahim, Reiham O.;Abd El-Azeem, S.M.;El-Ghanam, S.M.;Soliman, F.A.S.
    • Nuclear Engineering and Technology
    • /
    • 제52권8호
    • /
    • pp.1764-1770
    • /
    • 2020
  • The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

저온 동시소성 세라믹을 이용한 적층형 VCO의 설계 및 제작 (Design and Manufacture of Multi-layer VCO by LTCC)

  • 박귀남;이헌용;김지균;송진형;이동희
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
    • /
    • pp.291-294
    • /
    • 2003
  • The circuit substrate was made from the Low Temperature Cofired Ceramics(LTCC) that a $\varepsilon_\gamma$ was 7.8. Accumulated Varactor and the low noise transistor which were a Surface Mount Device-type element on LTCC substrate. Let passive element composed R, L, C with strip-line of three dimension in the multilayer substrate circuit inside, and one structure accumulate band-pass filter, resonator, a bias line, a matching circuit, and made it. Used Screen-Print process, and made Strip-line resonator. A design produced and multilayer-type VCO(Voltage Controlled Oscillator), and recognized a characteristic with the Spectrum Analyzer which was measurement equipment. Measured multilayer structure VCO is oscillation frequency 1292[MHz], oscillation output -28.38[dBm], hamonics characteristic -45[dBc] in control voltage 1.5[V], A phase noise is -68.22[dBc/Hz] in 100 KHz offset frequency. The oscillation frequency variable characteristic showed 30[MHz/V] characteristic, and consumption electric current is approximately 10[mA].

  • PDF

감마선 검출용 $HgI_2$ 소자 제작 및 특성 평가 (Fabrication and Test of a $HgI_2$ Gamma Ray Detector)

  • 최명진;이홍규;강영일;임호진;최승기
    • Journal of Radiation Protection and Research
    • /
    • 제16권2호
    • /
    • pp.1-6
    • /
    • 1991
  • 상온에서 사용할 수 있는 감마선 검출 소자로서 $HgI_2$ 소자의 응용성을 판단하기 위하여 기상 성장법으로 $HgI_2$ 단결정을 성장시켰고 이를 이용하여 검출 소자를 제작한 후 감마선 검출 특성을 조사하였다 성장된 단결정의 비저항과 전하 운반자 포획 밀도는 상온에서 각각 $10^{11}{\Omega}\;cm$$1.8{\times}10^{14}/cm^3$였으며 단결정의 Photoluminescence를 측정한 결과 성장된 $HgI_2$ 단결정의 밴드갭의 온도계수는 20K부터 77K에서 $-1.53{\times}10^{-4}eV/K$였다. 감마선 검출실험 결과 제작된 $HgI_2$ 검출 소자는 상온에서 우수한 계수 특성과 시간에 대한 선형적 축적 계수 특성을 나타내었으나 온도변화에 따라 계수의 특성의 변화는 심하였다.

  • PDF

THE DYNAMICS OF POSITIVE SOLUTIONS OF A HIGHER ORDER FRACTIONAL DIFFERENCE EQUATION WITH ARBITRARY POWERS

  • GUMUS, MEHMET;SOYKAN, YUKSEL
    • Journal of applied mathematics & informatics
    • /
    • 제35권3_4호
    • /
    • pp.267-276
    • /
    • 2017
  • The purpose of this paper is to investigate the local asymptotic stability of equilibria, the periodic nature of solutions, the existence of unbounded solutions and the global behavior of solutions of the fractional difference equation $$x_{n+1}=\frac{^{{\alpha}x}n-1(k+1)}{{\beta}+{\gamma}x^p_{n-k}x^q_{n-(k+2)}}$$, $$n=0,1,{\dots}$$ where the parameters ${\alpha}$, ${\beta}$, ${\gamma}$, p, q are non-negative numbers and the initial values $x_{-(k+2)}$,$x_{-(k+1)}$, ${\dots}$, $x_{-1}$, $x_0{\in}\mathb{R}^+$.

The Analysis of Gamma Oscillation and Phase-Synchronization for Memory Retrieval Tasks

  • 김성필;최승현;김현택;이승환
    • 한국인지과학회:학술대회논문집
    • /
    • 한국인지과학회 2010년도 춘계학술대회
    • /
    • pp.37-41
    • /
    • 2010
  • The previous investigations of electroencephalogram (EEG) activity in the memory retrieval tasks demonstrated that event-related potentials (ERP) during recollection showed different durations and the peak levels from those without recollection. However, it has been unknown that recollection in memory retrieval also modulates high-frequency brain rhythms as well as establishes large-scale synchronization across different cortical areas. In this study, we examined the spectral components of the EEG signals, especially the gamma bands (20-80Hz), measured during the memory retrieval tasks. Specifically, we focused on two major spectral components: first, we evaluated the temporal patterns of the power spectral density before and after the onset of the memory retrieval task; second, we estimated phase synchrony between all possible pairs of EEG channels to evaluate large-scale synchronization. Fourteen healthy subjects performed the memory retrieval task in the virtual reality environment where they selected whether or not t he present item was seen in the previous training period. When the subjects viewed the unseen items, the middle gamma power (40-60Hz) appeared to increase 200-500ms after stimulus onset while the low gamma power (20Hz) was suppressed all the way through the post-stimulus period 150ms after onset. The degree of phase synchronization in this low gamma level, however, increased when the subjects fetched the item from memory. This suggests that phase synchrony analysis might reveal different aspects of the memory retrieval process than the gamma power, providing additional information to the inference on the brain dynamics during memory retrieval.

  • PDF

Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments

  • El-Basit, Wafaa Abd;El-Ghanam, Safaa Mohamed;Abdel-Maksood, Ashraf Mosleh;Kamh, Sanaa Abd El-Tawab;Soliman, Fouad Abd El-Moniem Saad
    • Nuclear Engineering and Technology
    • /
    • 제48권5호
    • /
    • pp.1219-1229
    • /
    • 2016
  • The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or g fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different ${\gamma}$ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

Electric Field Effect on Nanochannel Formation in Electrochemical Porous Structures of Alumina

  • Kim, Keun-Joo;Choi, Jae-Ho;Lee, Jung-Tack
    • Transactions on Electrical and Electronic Materials
    • /
    • 제11권5호
    • /
    • pp.230-233
    • /
    • 2010
  • The authors investigated the anodization mechanism of aluminum in an oxalic acid solution, and the electrochemical reaction is very unique for pore formation via the dissolution process, which is very dependent on the surface geometry in nanoporous alumina templates. The cross-sectional nanochannels showed that the geometrical curvature of the initial surface can cause the branching of nanochannels to be adjusted in volume occupancy to be direct to the electric field normal to the surface. The nanoporous alumina with the crystalline $\gamma-Al_2O_3$ phase showed hexagonal ordering at a voltage of 40 V, with a nanohole distance of 102 nm from the charge density oscillation of the oxalic acid solution.

꿈의 신경생물학적 측면의 기초 (Basic Neurobiological Aspect of Dream)

  • 김석주
    • 수면정신생리
    • /
    • 제16권2호
    • /
    • pp.49-55
    • /
    • 2009
  • This review aims to introduce the basic neurobiological aspects of dream. There have been long debates on whether the neurobiology of rapid eye movement (REM) sleep is identical to that of dream. However, many theories on dream are based on the findings of REM sleep. Bizarre cognition and intense emotion in dream have been suggested to derive from physiological (e.g. desynchronized gamma oscillation and postsynaptic inhibition), chemical (e.g. decreased noradrenalin and serotonin, increased acetylcholine and modulation of dopamine), anatomical (e.g. deactivation of dorsolateral prefrontal cortex and activation of limbic and paralimbic areas) change in REM sleep. In addition, dream has been suggested to play its neurobiological roles. Processing of negative emotion may be one of the functions of dream. Dream is also supposed to consolidate memory, especially semantic memory. Despite a number of hypotheses and debates, the neurobiological mechanism of dream generation has not been concluded.

  • PDF

InAlAs/InGaAs/GaAs 100 nm-게이트 MHEMT 소자의 에피 구조 최적화 설계에 관한 연구 (Optimization Study on the Epitaxial Structure for 100nm-Gate MHEMTs with InAlAs/InGaAs/GaAs Heterostructure)

  • 손명식
    • 반도체디스플레이기술학회지
    • /
    • 제10권4호
    • /
    • pp.107-112
    • /
    • 2011
  • This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.